公开(公告)号：DE602006014058D1

公开(公告)日：2010-06-17

申请号：DE602006014058

申请日：2006-03-21

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SCHMIDT WAYDE R ,  TREDWAY WILLIAM K ,  VEDULA VENKATA R

IPC: C23C16/00 ,  C23C16/06 ,  C23C16/22 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

公开(公告)号：AT381523T

公开(公告)日：2008-01-15

申请号：AT05252382

申请日：2005-04-15

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SUN ELLEN Y

IPC: C04B41/87 ,  B01J19/02 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/89 ,  C23C4/10 ,  C23C28/00 ,  C23C30/00 ,  F01D5/28 ,  F02C7/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/8242

Abstract: A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.

公开(公告)号：DE602005003866D1

公开(公告)日：2008-01-31

申请号：DE602005003866

申请日：2005-04-15

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SUN ELLEN Y

IPC: C04B41/87 ,  B01J19/02 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/89 ,  C23C4/10 ,  C23C28/00 ,  C23C30/00 ,  F01D5/28 ,  F02C7/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/8242

Abstract: A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.

公开(公告)号：DE602005008170D1

公开(公告)日：2008-08-28

申请号：DE602005008170

申请日：2005-09-19

Applicant: UNITED TECHNOLOGIES CORP

Inventor： EATON HARRY E ,  BHATIA TANIA ,  SUN ELLEN Y ,  LAWTON THOMAS H

IPC: C23C4/10 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/89 ,  C23C4/18 ,  C23C30/00 ,  F01D5/28

Abstract: Protective coatings are described herein. Embodiments of these coatings comprise substantially only specific equilibrium phases therein, and have a CTE that is substantially equal to the CTE of the substrate upon which the coating is deposited. The desired coatings can be obtained by controlling the application of the coating and/or by heat treating the coated substrate to create the desired phases or microstructure in the coating.

公开(公告)号：CA2504264A1

公开(公告)日：2005-11-13

申请号：CA2504264

申请日：2005-04-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SUN ELLEN Y

IPC: B01J19/02 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C4/10 ,  C23C28/00 ,  C23C30/00 ,  F01D5/28 ,  F02C7/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/8242

Abstract: A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.

公开(公告)号：AT542785T

公开(公告)日：2012-02-15

申请号：AT05254950

申请日：2005-08-09

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  HOLOWCZAK JOHN E ,  BALDWIN NEIL

IPC: C04B41/90 ,  C25D13/02 ,  F01D5/28

Abstract: The present invention relates to a process for the deposition of protective coatings on complex shaped Si-based substrates which are used in articles and structures subjected to high temperature, aqueous environments comprises a non-line-of-sight process, particularly, electrophoretic deposition (EPD) process. The deposition process comprises steps of: providing a complex shaped Si-containing substrate; depositing an electrically conductive layer on the substrate; and depositing at least one barrier layer by electrophoretic deposition (EPD) as a protective coating.

公开(公告)号：DE602005003866T2

公开(公告)日：2008-12-11

申请号：DE602005003866

申请日：2005-04-15

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SUN ELLEN Y

IPC: C04B41/87 ,  B01J19/02 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/89 ,  C23C4/10 ,  C23C28/00 ,  C23C30/00 ,  F01D5/28 ,  F02C7/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/8242

Abstract: A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.

公开(公告)号：SG131011A1

公开(公告)日：2007-04-26

申请号：SG2006053516

申请日：2006-08-07

Applicant: UNITED TECHNOLOGIES CORP

Inventor： BHATIA TANIA ,  SMEGGIL JOHN G ,  TREDWAY WILLIAM K ,  SCHMIDT WAYDE R ,  NARDONE VINCENT C

Abstract: An article comprising a substrate containing silicon and a barrier layer which functions as an environmental barrier coating and, more particularly, a barrier layer which comprises hafnium silicate and, optionally, zirconium silicate and a method for forming the hafnium silicate as a barrier coating.