公开(公告)号：WO1988001451A1

公开(公告)日：1988-02-25

申请号：PCT/US1987001657

申请日：1987-07-15

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  LI, Hsiu, Y.

IPC: H03B09/14

CPC classification number: H03B9/145 ,  H03B7/08 ,  H03B2200/0074 ,  H03B2201/015 ,  H03B2201/0208

Abstract: The four-diode bridge (14) is positioned within the cavity (10) of a Gunn diode (12) oscillator. A subharmonic signal is applied to the diode bridge and the diode bridge couples an odd harmonic of the injected signal into the cavity. The cavity is thus caused to resonate at the odd harmonic of the injected signal. The injected signal can be changed using a frequency synthesizer (26) in order to provide a microwave oscillator with multiple-channel operation. The diode bridge provides a feedback signal indicative of the phase of the cavity oscillation. The feedback signal is applied to a varactor (24) which pretunes the Gunn diode oscillator and thereby provides phase-locked control.

Abstract translation: 四极二极管桥（14）位于耿氏二极管（12）振荡器的腔（10）内。 次谐波信号施加到二极管电桥，二极管电桥将注入信号的奇次谐波耦合到空腔中。 因此，腔体以注入信号的奇次谐波发生谐振。 可以使用频率合成器（26）来改变注入的信号，以便提供具有多通道操作的微波振荡器。 二极管桥提供表示腔振荡相位的反馈信号。 反馈信号被施加到可变电抗器（24），该变容二极管预先耿氏二极管振荡器，从而提供锁相控制。

公开(公告)号：WO1989004565A1

公开(公告)日：1989-05-18

申请号：PCT/US1988003749

申请日：1988-10-19

Applicant: ALLIED-SIGNAL INC.

Inventor： ALLIED-SIGNAL INC. ,  CHILLUFFO, Ronald, Louis ,  GOTTLIEB, Ellis, Jack

IPC: H03B07/14

CPC classification number: H03B9/147 ,  H03B2009/126 ,  H03B2200/0074 ,  H03B2201/015

Abstract: A microwave diode tuning circuit including an IMPATT diode holder of coaxial form and an adjustable capacitor connected in a parallel resonant circuit by microstrip transmission line. The tuning circuit includes a stabilization network and a bias insertion network. Optionally, the tuning circuit may include a hybrid junction for coupling two such diode tuning circuits together. The diode holder includes an internally-externally threaded sleeve providing means for continuously adjusting, through a limited range, the inductance of the resonant circuit.

公开(公告)号：US5126696A

公开(公告)日：1992-06-30

申请号：US744051

申请日：1991-08-12

Applicant: Albert J. Grote ,  Paul J. Johnson ,  James R. Hayes

Inventor： Albert J. Grote ,  Paul J. Johnson ,  James R. Hayes

IPC: H03B1/00 ,  H03B7/08 ,  H03B9/14

CPC classification number: H03B9/145 ,  H03B2201/015 ,  H03B7/08 ,  H03B9/146

Abstract: A W-band waveguide variable controlled oscillator incorporating a capacitively coupled Gunn diode and varactor diode arranged in such a manner that adverse environmental conditions do not deleteriously effect the stability of the output of the oscillator. The Gunn diode is electrically connected to a waveguide chamber within the oscillator and includes a resonator electrically connected to its end cap. The resonator is electrically connected to a DC bias source by means of a DC bias filter and a wire inductor. Opposite and above the Gunn diode is a varactor assembly including a varactor diode, which is also electrically connected to a DC bias source through a DC bias filter. A variable coupling spacer within the varactor assembly adjusts the distance between the varactor diode and the Gunn diode such that the capacitive coupling between the two can be adjusted. In addition, an adjustable back-short is incorporated within the waveguide channel to adjust the power output of the oscillator. Also, a fine tuning screw is threadably engaged to the waveguide channel to adjust the capacitance of the resonator. This configuration enables the oscillator to have a stable output and low power losses under adverse environmental conditions.

Abstract translation: 一种W波段波导可变控制振荡器，其包含电容耦合的耿氏二极管和变容二极管，其排列方式使得不利的环境条件不会有害地影响振荡器输出的稳定性。 耿氏二极管电连接到振荡器内的波导室，并且包括电连接到其端盖的谐振器。 谐振器通过DC偏置滤波器和线电感器电连接到DC偏置源。 耿氏二极管的相对和上方是包括变容二极管的变容二极管，变容二极管也通过直流偏置滤波器电连接到直流偏压源。 可变电抗器组件内的可变耦合间隔件调整变容二极管和耿氏二极管之间的距离，使得可以调节两者之间的电容耦合。 此外，在波导通道内并入可调节的反向短路，以调整振荡器的功率输出。 此外，微调螺丝螺纹地接合到波导通道以调节谐振器的电容。 该配置使得振荡器在不利的环境条件下具有稳定的输出和低功率损耗。

公开(公告)号：US4228539A

公开(公告)日：1980-10-14

申请号：US973797

申请日：1978-12-28

Applicant: Reijo Hamalainen

Inventor： Reijo Hamalainen

IPC: H03B1/00 ,  H03B5/18 ,  H04B1/04 ,  H04B1/03 ,  H03H13/00

CPC classification number: H04B1/04 ,  H03B5/1805 ,  H03B2201/011 ,  H03B2201/015

Abstract: The components of a transistor oscillator are mounted on an end cap rotatably mounted on the outer tube of a cavity resonator which stabilizes the oscillator. The intensity with which a high frequency is applied to the cavity resonator is adjustable by rotation of the end cap.

Abstract translation: 晶体管振荡器的组件安装在可旋转地安装在腔谐振器的外管上的端盖上，该谐振腔稳定振荡器。 高频施加到空腔谐振器的强度可通过端盖的旋转来调节。

公开(公告)号：US4053854A

公开(公告)日：1977-10-11

申请号：US693824

申请日：1976-06-07

Applicant: Richard Calvin Havens

Inventor： Richard Calvin Havens

IPC: H03B9/12 ,  H03B1/00 ,  H03B7/14

CPC classification number: H03B7/14 ,  H03B2201/015

Abstract: A housing defining a first cavity forming a transmission line and a negative impedance semiconductor device terminating one end of the transmission line in a negative impedance, the housing further defining a second cavity resonant at a predetermined frequency and a means of electromagnetically coupling between the transmission line and the second cavity to couple energy therebetween, a reactive element formed between said negative impedance semiconductor device and the housing to provide a shunt susceptance to parallel resonate with the susceptance of the semiconductor device at the desired frequency and bias, and load isolator connected to the opposite end of the transmission line for transmitting RF output pulses to the RF load and for applying a DC bias thereto normally at a first level and periodically reduced to a second level for a short duration, said semiconductor device operating as a series resonant circuit with the DC bias at the first level to cause energy to be stored in the resonant cavity and operating in parallel resonance with the reactive element when the DC bias is at the second level to lower the Q of the resonant cavity and allow energy to flow from the resonant cavity to the RF load in a short duration, high peak power pulse.

Abstract translation: 限定形成传输线的第一空腔的壳体和以负阻抗端接所述传输线的一端的负阻抗半导体器件，所述壳体进一步限定以预定频率谐振的第二腔和在所述传输线之间电磁耦合的装置 以及第二腔，以在其间耦合能量;在所述负阻抗半导体器件和所述壳体之间形成的电抗元件，以提供并联电纳以在期望的频率和偏压下与所述半导体器件的电纳并联谐振;以及负载隔离器， 传输线的相对端，用于将RF输出脉冲发送到RF负载并且用于在第一电平处正常施加DC偏压，并且在短时间内周期性地减小到第二电平，所述半导体器件用作串联谐振电路 DC偏压在第一级，以产生能量储存 谐振腔并且当DC偏压处于第二电平时与电抗元件并联谐振，以降低谐振腔的Q，并允许能量在短时间内从谐振腔流到RF负载，高峰值功率 脉冲。

公开(公告)号：US3195071A

公开(公告)日：1965-07-13

申请号：US4926060

申请日：1960-08-12

Applicant: RCA CORP

Inventor： REYNOLD STEINHOFF

IPC: H03B1/00 ,  H03B7/08 ,  H03B7/14

CPC classification number: H03B7/14 ,  H03B7/08 ,  H03B2201/015 ,  H03B2201/031

公开(公告)号：US4766398A

公开(公告)日：1988-08-23

申请号：US44186

申请日：1987-04-30

Applicant: Paul A. Kiedrowski

Inventor： Paul A. Kiedrowski

IPC: H03B1/00 ,  H03B5/04 ,  H03B7/14 ,  H03L1/04

CPC classification number: H03B7/14 ,  H03B2201/015 ,  H03B5/04

Abstract: This microwave oscillator in one embodiment has two tuning rods (16 and 18) configured to extend within a resonant cavity (12). One of these tuning rods (18) attaches to a shaft (19) that is affixed at one end and that is comprised of a material having a thermal coefficient of expansion that is different from the material comprising the housing (11) that forms the cavity (12). As a result, movement of the tuning rods (16 and 18) will vary as temperature varies, with a resulting stability in the frequency of oscillation.

Abstract translation: 在一个实施例中，该微波振荡器具有被配置为在谐振腔（12）内延伸的两个调谐杆（16和18）。 这些调音杆（18）中的一个附接到轴（19），该轴（19）固定在一端，并且由具有与包括形成空腔的壳体（11）的材料不同的热膨胀系数的材料组成 （12）。 结果，调节杆（16和18）的移动将随温度变化而变化，从而产生振荡频率的稳定性。

公开(公告)号：US4270099A

公开(公告)日：1981-05-26

申请号：US49158

申请日：1979-06-18

Applicant: Hardial S. Gill ,  Othmar Tegel

Inventor： Hardial S. Gill ,  Othmar Tegel

IPC: H03F3/191 ,  H03B1/00 ,  H03B9/14 ,  H03F3/60

CPC classification number: H03F3/608 ,  H03B9/145 ,  H03B2009/126 ,  H03B2201/015

Abstract: A circuit arrangement for generating and stably amplifying broadband rf signals. The circuit arrangement includes a first rectangular waveguide designed for operation in a frequency range below its cutoff frequency and a second rectangular waveguide for operation at the operating frequency. An active semiconductor element is disposed in the first rectangular waveguide and a direct voltage is supplied to the semiconductor element. At least one waveguide section is provided for connecting the first and second rectangular waveguides and has the same width as the second rectangular waveguide and a height less than the second rectangular waveguide. The waveguide section matches the cross section of the first rectangular waveguide to the cross section of the second rectangular waveguide. A plurality of tuning devices are disposed in the first rectangular waveguide and the waveguide section and include a capacitively acting tuning screw and an inductively acting tuning device, the latter being disposed in an end of the first rectangular waveguide remote from the waveguide section.

Abstract translation: 用于产生并稳定地放大宽带rf信号的电路装置。 电路装置包括设计用于在低于其截止频率的频率范围内操作的第一矩形波导和用于在工作频率下操作的第二矩形波导。 在第一矩形波导中设置有源半导体元件，并向半导体元件提供直流电压。 提供至少一个波导部分用于连接第一和第二矩形波导并且具有与第二矩形波导相同的宽度和小于第二矩形波导的高度。 波导部分将第一矩形波导的横截面与第二矩形波导的横截面相匹配。 多个调谐装置设置在第一矩形波导和波导部分中，并且包括电容调节螺丝和电感作用调谐装置，后者设置在远离波导部分的第一矩形波导的端部。

公开(公告)号：US3638141A

公开(公告)日：1972-01-25

申请号：US3638141D

申请日：1970-11-12

Applicant: RCA CORP

Inventor： LEVINE PETER ALAN ,  LIU SHING-GONG

IPC: H03B1/00 ,  H03B7/14

CPC classification number: H03B7/14 ,  H03B2201/015

Abstract: A compact, easily tunable, silicon avalanche diode oscillator for pulsed operation in the L-band which has an efficiency of about 40 percent, equal to that of vacuum tube oscillators operating at these frequencies, is obtained by utilizing a coaxial line composed of three serially connected sections in which the intermediate section has a characteristic impedance significantly larger than either of the other sections. One end of the coaxial line is short circuited; the avalanche diode is coupled to the coaxial line at a point between the short circuit and the beginning of the intermediate section; a variable capacitance is connected across the intermediate section at a given point thereof; and the other end of the coaxial line is connected to the output of the oscillator. The short circuit is made movable with respect to the position of the avalanche diode and the variable capacitance is made adjustable.

Abstract translation: 通过利用由三个串联组成的同轴线，可以获得一种紧凑的，易于调节的硅雪崩二极管振荡器，用于在L波段中进行脉冲操作，其效率约为在这些频率下工作的真空管振荡器的约40％ 连接部分，其中中间部分具有明显大于其它部分之一的特性阻抗。 同轴线的一端短路; 雪崩二极管在短路和中间部分的开始点之间的点处耦合到同轴线; 一个可变电容在给定的位置连接在中间部分上; 同轴线的另一端连接到振荡器的输出端。 使短路相对于雪崩二极管的位置可移动，并且可变电容被调节。

公开(公告)号：US3624555A

公开(公告)日：1971-11-30

申请号：US3624555D

申请日：1970-03-02

Applicant: JOHNSON SERVICE CO

Inventor： KLEIN CARL F

IPC: H03B1/00 ,  H03B7/14 ,  H03B7/12

CPC classification number: H03B7/14 ,  H03B2201/015

Abstract: A microwave cavity oscillator includes a cavity block of a suitable metal having a cavity in one wall. A microwave diode is secured to the closed end of the open-ended cavity with a tubular center conductor secured to the diode. A dielectric tuning element of ''''Rexolite'''' is mounted for axial adjustment within the open end of the cavity. The element provides a direct capacitive coupling of the open-ended cavity to the center conductor to change cavity impedance and the frequency without loading the cavity with the consequent losses. A bias wire is connected to the center conductor and extends laterally through an opening to a bias disc within a recess. A dielectric plate is placed between the disc and recess base. A bias pin is carried by a dielectric member within a bias plug which threads into the recess. The pin bears on the back of the disc to clamp the dielectric plane and element against the base recess. The diode package defines a current-dividing network around the diode permitting adjustment of the circulating current through the diode.