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285 records (took 0.024 seconds)

    91.
    发明专利
    未知

    公开(公告)号：DE602008000398D1

    公开(公告)日：2010-01-28

    申请号：DE602008000398

    申请日：2008-05-05

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： HANDTMANN MARTIN DR ,  KAITILA JYRKI

    IPC: H03H9/58 ,  H03H9/60

    Abstract: A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel. The first and the second resonator each comprise a first electrode, a piezoelectric layer formed at least partially on the first electrode and a second electrode formed at least partially on the piezoelectric layer. A coupling layer is provided between the first resonator and the second resonator.

    92.
    发明专利
    未知

    公开(公告)号：DE102009022478A1

    公开(公告)日：2009-12-10

    申请号：DE102009022478

    申请日：2009-05-25

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： HANDTMANN MARTIN ,  FRANOSCH MARTIN

    IPC: H03H9/15 ,  H03H3/02

    Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.

    93.
    发明专利
    未知

    公开(公告)号：DE102009010863A1

    公开(公告)日：2009-09-10

    申请号：DE102009010863

    申请日：2009-02-27

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： ALLAH MOHAMED ABD ,  WEBER WERNER ,  THALHAMER ROBERT ,  KAITILA JYRKI

    IPC: H03H9/17

    Abstract: A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.

    94.
    发明专利
    未知

    公开(公告)号：DE602004012511T2

    公开(公告)日：2009-04-30

    申请号：DE602004012511

    申请日：2004-06-22

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： LARSON JOHN D III

    IPC: H01L41/09 ,  H01L41/18 ,  H03H9/58 ,  H01L41/22 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/60

    Abstract: The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler (130) between the FBARs. Each of the FBARs has opposed planar electrodes (124,122,114,112) and a layer of piezoelectric material (126,116) between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

    95.
    发明专利
    未知

    公开(公告)号：DE10119442B4

    公开(公告)日：2009-01-08

    申请号：DE10119442

    申请日：2001-04-20

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： RUBY RICHARD C

    IPC: G10K11/02 ,  H03H3/02 ,  H01L41/08 ,  H01L41/22 ,  H03H3/04 ,  H03H3/08 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/58 ,  H03H9/64

    Abstract: A filter formed of acoustic resonators, where each resonator has its own cavity and a bottom electrode that spans the entirety of the cavity, so that the bottom electrode has an unsupported interior region surrounded by supported peripheral regions. In the preferred embodiment, the cavity is formed by etching a depression into the substrate, filling the depression with a sacrificial material, depositing the piezoelectric and electrode layers that define an FBAR or SBAR, and then removing the sacrificial material from the depression. Also in the preferred embodiment, the sacrificial material is removed via release holes that are limited to the periphery of the depression. Preferably, the bottom electrode is the only electrode that spans the cavity, thereby limiting the formation of parasitic FBARs or SBARs. In one embodiment, the bottom electrode includes a serpentine edge that leaves a portion of one side of the cavity free of overlap by the bottom electrode, so that a top electrode may overlap this portion. Thus, the top and bottom electrodes can overlap the same side without sandwiching the piezoelectric layer outside of the unsupported interior region.

    96.
    发明专利
    未知

    公开(公告)号：DE60229577D1

    公开(公告)日：2008-12-11

    申请号：DE60229577

    申请日：2002-01-25

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： ELLAE JUHA ,  TIKKA PASI ,  KAITILA JYRKI

    IPC: G10K11/02 ,  H03H3/013 ,  H01L41/22 ,  H03H3/04

    Abstract: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask so as to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for the thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

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