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    Acoustic coupling resonator having resonance transmission minimum value
    2.
    发明专利
    Acoustic coupling resonator having resonance transmission minimum value 审中-公开
    具有谐振传输最小值的声学耦合谐振器

    公开(公告)号：JP2009147909A

    公开(公告)日：2009-07-02

    申请号：JP2008241113

    申请日：2008-09-19

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： JAMNEALA TIBERIU ,  SMALL MARTHA ,  RUBY RICHARD

    IPC: H03H9/56 ,  H01L41/09 ,  H01L41/18 ,  H03H9/17 ,  H03H9/205

    CPC classification number: H03H9/60 ,  H03H9/584

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic resonator filter which can be designed so as to have an enhanced proximity frequency blocking characteristic and to adjust a filter attenuation characteristic in order to block a desired frequency or a frequency range.
    SOLUTION: A band pass filter includes input and output terminals 505 and 555, first and second acoustic resonators 510 and 520, and an acoustic coupling layer 530. The first acoustic resonator 510 includes first and second electrodes 512, 514 and a piezoelectric layer 516 formed between these first and second electrodes. A first electrode of the first acoustic resonator is connected to the input terminal. The second acoustic resonator 520 includes first and second electrodes 522, 524 and a piezoelectric layer 526 formed between these first and second electrodes. Acoustic coupling is imparted between the second electrode of the first acoustic resonator and the first electrode of the second acoustic resonator, and the output terminal is connected to the second electrode of the second acoustic resonator. A capacitor 550 is formed to be extended between the input and output terminals, the frequency response of the filter includes at least two transmission zeros.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种可被设计成具有增强的接近频率阻挡特性并且调节滤波器衰减特性以便阻挡期望频率或频率范围的声谐振滤波器。 解决方案：带通滤波器包括输入和输出端子505和555，第一和第二声谐振器510和520以及声耦合层530.第一声谐振器510包括第一和第二电极512,514以及压电 在这些第一和第二电极之间形成的层516。 第一声​​谐振器的第一电极连接到输入端。 第二声谐振器520包括第一和第二电极522,524以及形成在这些第一和第二电极之间的压电层526。 在第一声谐振器的第二电极和第二声谐振器的第一电极之间施加声耦合，并且输出端连接到第二声谐振器的第二电极。 形成电容器550以在输入和输出端子之间延伸，滤波器的频率响应包括至少两个传输零点。 版权所有（C）2009，JPO＆INPIT

    Piezoelectric resonator structure, and electric filter having frame element
    3.
    发明专利
    Piezoelectric resonator structure, and electric filter having frame element 审中-公开
    压电谐振器结构和具有框架元件的电动过滤器

    公开(公告)号：JP2008236743A

    公开(公告)日：2008-10-02

    申请号：JP2008052886

    申请日：2008-03-04

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： JAMNEALA TIBERIU ,  RUBY RICHARD C

    IPC: H03H9/17 ,  H01L41/09 ,  H03H9/54

    CPC classification number: H03H9/173 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/177

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic resonator structure for inhibiting lateral mode vibration as unnecessary vibration, and to provide an electric filter using the acoustic resonator structure. SOLUTION: As for a thin-film bulk acoustic resonator(FBAR) as a kind of piezoelectric resonator, the resonator 200 has a lower electrode 207, a piezoelectric element 206, and an upper electrode 201, which are laminated sequentially on a cavity 208 formed on a substrate 205. The lower electrode 207 and the upper electrode 201 have substantially equal profile and dimensions. An action region of the resonator 200 is demarcated by an overlapped area of the lower electrode 207 and the upper electrode 201. In this structure, a frame element 204, which brings mismatching of acoustic impedance between the upper electrode 201 and an upper connection portion 203, is located at an interface between the upper electrode 201 and the upper connection portion 203. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于抑制侧向振动作为不必要的振动的声共振器结构，并且提供使用声共振器结构的电滤波器。 解决方案：作为一种压电谐振器的薄膜体声波谐振器（FBAR），谐振器200具有下电极207，压电元件206和上电极201，它们依次层压在 形成在基板205上的空腔208.下电极207和上电极201具有基本上相同的轮廓和尺寸。 谐振器200的动作区域由下部电极207和上部电极201的重叠区域划分。在该结构中，在上部电极201和上部连接部203之间引起声阻抗失配的框架元件204 位于上电极201和上连接部分203之间的界面。版权所有（C）2009，JPO＆INPIT

    Bulk acoustic resonator including non-piezoelectric layer
    5.
    发明专利
    Bulk acoustic resonator including non-piezoelectric layer 审中-公开
    包括非压电层的大容量声学谐振器

    公开(公告)号：JP2013005446A

    公开(公告)日：2013-01-07

    申请号：JP2012135371

    申请日：2012-06-15

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： DARIUSZ BURAK ,  JYRKI KAITILA ,  ALEXANDRE SHIRAKAWA ,  MARTIN HANDMAN ,  PHIL NICKEL

    IPC: H03H9/17 ,  H03H9/54

    CPC classification number: H03H9/173 ,  H03H9/585

    Abstract: PROBLEM TO BE SOLVED: To provide a bulk acoustic resonator including a non-piezoelectric layer.SOLUTION: A first electrode 105 is suspended over a substrate 103 and a cavity 104. A piezoelectric layer 107 is placed on the first electrode 105 and composed of a fine-grained c-axis piezoelectric material, e.g. aluminum nitride (AlN) or zinc oxide (ZnO). A non-piezoelectric layer 108 is typically composed of the same material as that of the piezoelectric layer 107, but it is amorphous or polycrystalline and exhibits little or no piezoelectric effect. A second electrode 101 is placed on the piezoelectric layer 107 or the non-piezoelectric layer 108. Overlap of the cavity 104, the first electrode 105, the piezoelectric layer 107, and the second electrode 101 defines the active region 109 of a resonator.

    Abstract translation: 解决的问题：提供一种包括非压电层的体声波谐振器。 解决方案：第一电极105悬置在衬底103和空腔104上。压电层107被放置在第一电极105上，并由细粒度的c轴压电材料构成。 氮化铝（AlN）或氧化锌（ZnO）。 非压电层108通常由与压电层107相同的材料构成，但是它是无定形或多晶的，并且表现出很小的压电效应或者没有压电效应。 第二电极101被放置在压电层107或非压电层108上。空腔104，第一电极105，压电层107和第二电极101的重叠限定了谐振器的有源区域109。 版权所有（C）2013，JPO＆INPIT

    Solidly mounted multi-resonator bulk acoustic wave filter with patterned acoustic mirror
    6.
    发明专利
    Solidly mounted multi-resonator bulk acoustic wave filter with patterned acoustic mirror 有权
    带有图案声光镜的固体多重谐振器大声波滤波器

    公开(公告)号：JP2009022052A

    公开(公告)日：2009-01-29

    申请号：JP2008268710

    申请日：2008-10-17

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： ELLA JUHA ,  KAITILA JYRKI ,  PARTANEN MEERI TALVIKKI

    IPC: G10K11/04 ,  H03H3/02 ,  H01L41/09 ,  H01L41/22 ,  H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H03H9/58

    CPC classification number: H03H9/02125 ,  H03H3/04 ,  H03H9/564 ,  Y10T29/42

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic mirror type of resonator providing good reflectivity with a relatively small number of layers but not introducing capacitive coupling to other resonators formed on the same substrate and using the same acoustic mirror. SOLUTION: The present invention relates to a method for fabricating a multi-resonator bulk acoustic wave (BAW) filter, including the steps of: (a) choosing dielectric materials serving as an acoustic mirror and metallic materials; and (b) providing at least one of the metallic layers via a fabrication procedure in which the metallic layer is patterned into distinct portions by an etching process that removes enough of the metallic layer between where different resonator sections are to be placed so as to provide electrical isolation between the portions of the layer beneath the different resonator sections, thereby providing a multi-resonator BAW filter with reduced capacitive coupling between resonators. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有相对较少数量层的良好反射率的声镜型谐振器，但是不向同一衬底上形成的其它谐振器引入电容耦合并使用相同的声反射镜。 解决方案：本发明涉及一种制造多谐振子体声波（BAW）滤波器的方法，包括以下步骤：（a）选择用作声镜和金属材料的介电材料; 和（b）经由制造程序提供金属层中的至少一个，其中通过蚀刻工艺将金属层图案化成不同的部分，该蚀刻工艺在不同的谐振器部分之间移除足够的金属层，以提供 在不同谐振器部分之下的层的部分之间的电隔离，从而提供谐振器之间具有减小的电容耦合的多谐振器BAW滤波器。 版权所有（C）2009，JPO＆INPIT

    Resonator of frequency-temperature coefficient adjusting type
    7.
    发明专利
    Resonator of frequency-temperature coefficient adjusting type 审中-公开
    频率系数调节型谐振器

    公开(公告)号：JP2007082218A

    公开(公告)日：2007-03-29

    申请号：JP2006245359

    申请日：2006-09-11

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： RUBY RICHARD C

    IPC: H03H9/02 ,  H03B5/30 ,  H03H9/17

    CPC classification number: H03H9/02102 ,  H03H3/04 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0407 ,  H03H2003/0471

    Abstract: PROBLEM TO BE SOLVED: To provide a resonator equipped with a temperature compensation function. SOLUTION: A pair of temperature-compensated resonators (300, 390) include a first resonator (111) which is composed so as to resonate with a first frequency (f01) and has a first frequency-temperature coefficient (TC1), and a second resonator (121) which is composed so as to resonate with a second frequency (f02) and has a second frequency temperature coefficient (TC2). The second frequency (f02) is higher than the first frequency (f01) and the second frequency-temperature coefficient (TC2) is smaller than the first frequency-temperature coefficient (TC1). The first resonator (111) and the second resonator (121) are formed on the same substrate (306). COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种配备有温度补偿功能的谐振器。 解决方案：一对温度补偿谐振器（300,390）包括第一谐振器（111），其构成为与第一频率（f01）谐振并具有第一频率 - 温度系数（TC1）， 以及第二谐振器（121），其被构成为与第二频率（f02）谐振并具有第二频率温度系数（TC2）。 第二频率（f02）高于第一频率（f01），第二频率温度系数（TC2）小于第一频率 - 温度系数（TC1）。 第一谐振器（111）和第二谐振器（121）形成在同一衬底（306）上。 版权所有（C）2007，JPO＆INPIT

    BANDPASS FILTER NETWORK AND METHOD FOR BANDPASS FILTERING SIGNALS USING MULTIPLE ACOUSTIC RESONATORS
    8.
    发明专利
    BANDPASS FILTER NETWORK AND METHOD FOR BANDPASS FILTERING SIGNALS USING MULTIPLE ACOUSTIC RESONATORS 有权

    公开(公告)号：JP2006345533A

    公开(公告)日：2006-12-21

    申请号：JP2006160597

    申请日：2006-06-09

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： MICHAEL LOUIS FRANK

    IPC: H03H11/04 ,  H03H9/54 ,  H04B1/40

    Abstract: PROBLEM TO BE SOLVED: To provide a narrow-band bandpass filter network and method for bandpass filtering signals with narrow bandwidth of a desired frequency band (ISM 2.4 band or the like). SOLUTION: The bandpass filter network and method for bandpass filtering signals uses multiple acoustic resonators. The acoustic resonators may be Film Bulk Acoustic Resonators (FBARs) or Surface Acoustic Wave (SAW) resonators. The acoustic resonators are separated by one or more electrical components (for example, multiple transistors of a single amplifier) to provide isolation between the multiple acoustic resonators. COPYRIGHT: (C)2007,JPO&INPIT

    Solid-mount bulk acoustic wave resonator structure with bridge
    9.
    发明专利
    Solid-mount bulk acoustic wave resonator structure with bridge 审中-公开
    具有桥梁的固体散热声波谐振器结构

    公开(公告)号：JP2013138425A

    公开(公告)日：2013-07-11

    申请号：JP2012277638

    申请日：2012-12-20

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： FENG CHRIS ,  CHOY JOHN ,  PHIL NIKKEL

    IPC: H03H9/17

    CPC classification number: H03H9/132 ,  H03H9/175

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic resonator structure, in a BAW resonator, by conquering an acoustic loss reducing a Q factor since the Q factor is reduced in the BAW resonator having an active domain because of the case where the loss may be enlarged by a connecting part to the active domain.SOLUTION: A solid-mount bulk acoustic resonator 100 comprises a first electrode 102, a second electrode 104, a piezoelectric layer 103 disposed between the first electrode and the second electrode, and an acoustic reflector 105 disposed below the first electrode, the second electrode and the piezoelectric layer and comprised of a plurality of layers. Portions of the first electrode, the second electrode and the piezoelectric layer overlapped with the acoustic reflector define an active domain 114 of the acoustic resonator, and the piezoelectric layer extends on an end (edge) of the first electrode. Furthermore, the acoustic resonator comprises a bridge 108 adjacent to a terminal of the active domain of the acoustic resonator. The bridge overlaps with a part of the first electrode.

    Abstract translation: 要解决的问题：为了在BAW谐振器中提供声谐振器结构，通过克服降低Q因子的声损耗，因为在具有有源域的BAW谐振器中Q因数被减小，这是因为损失可能被扩大的情况 通过与有源域的连接部分。固体安装体声波谐振器100包括第一电极102，第二电极104，设置在第一电极和第二电极之间的压电层103，以及设置在第一电极102和第二电极之间的声反射器105 在第一电极，第二电极和压电层下面，并且由多个层构成。 与声反射器重叠的第一电极，第二电极和压电层的部分限定声谐振器的有源区域114，并且压电层在第一电极的端部（边缘）上延伸。 此外，声谐振器包括邻近声谐振器的有源域的端子的桥108。 桥与第一电极的一部分重叠。

    Multilayer transducer with annular contact
    10.
    发明专利
    Multilayer transducer with annular contact 审中-公开
    多层接触式多层传感器

    公开(公告)号：JP2008271559A

    公开(公告)日：2008-11-06

    申请号：JP2008109031

    申请日：2008-04-18

    Applicant: Avago Technologies Wireless Ip (Singapore) Pte Ltd ,  アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド

    Inventor： FAZZIO R SHANE ,  DAUKSHER WALTER ,  GOEL ATUL

    IPC: H04R17/00

    CPC classification number: B06B1/0611 ,  B81B3/0021 ,  B81B2201/0257 ,  G01H11/08 ,  H04R17/02

    Abstract: PROBLEM TO BE SOLVED: To provide a transducer structures having multiple piezoelectric layer and annular contacts.
    SOLUTION: The transducer structure includes a first transducer. The first transducer comprises: a first inner electrode; a first outer electrode; a lower inner electrode; a lower outer electrode; a first piezoelectric element disposed between the first electrodes and the lower electrodes; a first gap between the first inner electrode and the first outer electrode; and a lower gap between the lower inner electrode and the lower outer electrode. The transducer structure also includes a second transducer, which comprises: a second inner electrode; a second outer electrode; the lower inner electrode; the lower outer electrode; a second piezoelectric element disposed between the second electrodes and the lower electrodes; and a second gap between the second inner electrode and the second outer electrode.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有多个压电层和环形触点的换能器结构。 传感器结构包括第一传感器。 第一传感器包括：第一内部电极; 第一外电极; 下内电极; 下外电极; 设置在第一电极和下电极之间的第一压电元件; 第一内电极和第一外电极之间的第一间隙; 以及下部内部电极和下部外部电极之间的下部间隙。 换能器结构还包括第二换能器，其包括：第二内部电极; 第二外电极; 下内电极; 下外电极; 设置在所述第二电极和所述下电极之间的第二压电元件; 以及第二内部电极和第二外部电极之间的第二间隙。 版权所有（C）2009，JPO＆INPIT

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