公开(公告)号：KR100252223B1

公开(公告)日：2000-04-15

申请号：KR1019970044819

申请日：1997-08-30

Applicant: 삼성전자주식회사

Inventor： 임광신 ,  김은아 ,  박상오 ,  황경석

IPC: H01L21/304

CPC classification number: H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

Abstract: PURPOSE: A method for cleaning a contact hole in semiconductor devices is provided to be capable of easily removing impurities such as polymer, copper, gold, etc. existing at the sidewall of a native oxide film formed at the bottom of a contact hole and a contact hole. CONSTITUTION: A method for cleaning a contact hole maintains a wafer in which a contact hole is formed at the temperature of 20-25 Celsius. A cleaning solution in which isopropyl alcohol of 25-35 weight%, preferably 30 weight%, hydrogen peroxide of 2-4 weight%, preferably 3.0 weight%, hydrofluorine of 0.05-0.25 weight%, preferably 0.15 weight% and deionized water as a residual quantity are mixed is injected into a container. After a cleaning process is performed for 1-5 minutes, the wafer is taken out from the container. At this time, hydrofluorine functions to remove a native oxide film, polymer and metal impurities which are formed at the bottom of the contact hole.

Abstract translation: 目的：提供一种用于清洁半导体器件中的接触孔的方法，其能够容易地除去存在于形成在接触孔底部的天然氧化物膜的侧壁上的诸如聚合物，铜，金等的杂质， 接触孔。 构成：清洁接触孔的方法维持在20-25℃的温度下形成接触孔的晶片。 一种清洁溶液，其中异丙醇为25-35重量％，优选30重量％的过氧化氢，2-4重量％，优选3.0重量％氢氟酸0.05-0.25重量％，优选0.15重量％，去离子水为 将剩余量混合注入容器中。 在1-5分钟的清洁处理之后，将晶片从容器中取出。 此时，氢氟酸用于去除在接触孔的底部形成的天然氧化物膜，聚合物和金属杂质。