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公开(公告)号：KR1020160012447A
公开(公告)日：2016-02-03
申请号：KR1020140093884
申请日：2014-07-24
Applicant: 한국과학기술원 , 재단법인 나노기반소프트일렉트로닉스연구단
IPC: H04N5/225
CPC classification number: H04N5/2253 , H04N5/2257 , H05K1/189
Abstract: 본발명은카메라장치의외관이다양한형태로가변하고, 이에따라카메라장치를통해획득하는이미지의형태도다양하게변화될수 있도록플렉서블카메라장치에관한것으로, 상기플렉서블카메라장치는전체또는일부영역이휘어지거나, 신장또는수축될수 있는플렉서블기판; 상기플렉서블기판위에실장되어, 상기플렉서블기판와동일하게전체또는일부영역이휘어지거나, 신장또는수축될수 있는포토다이오드어레이; 및상기포토다이오드어레이의동작을제어하고, 상기포토다이오드어레이를통해출력되는다수의전기신호를처리하여디지털이미지영상을획득및 출력하는제어장치를포함할수 있다.
Abstract translation: 本发明涉及一种柔性相机装置，其外部以各种形状变化以不同地改变通过相机装置获得的图像的形状。 柔性相机装置包括：柔性基板，其整个区域或部分区域弯曲，延伸或收缩; 安装在柔性基板上的光电二极管阵列，以允许整个区域或其部分区域弯曲，延伸或收缩以等于柔性基板; 以及控制装置，其控制光电二极管阵列的操作并处理从光电二极管阵列输出的多个电信号，以获得和输出数字图像。
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公开(公告)号：KR101493797B1
公开(公告)日：2015-02-17
申请号：KR1020130124751
申请日：2013-10-18
Applicant: 한국과학기술원
IPC: H01L35/04
Abstract: 본 발명은 플랙시블 열전소자 및 그 제조장법에 관한 것으로서, 유리섬유 등으로 이루어지는 메쉬(Mesh)형 기판에 열전물질을 형성하는 것을 특징으로 하는 것이다. 본 발명에 의하면, 알루미나 등으로 형성되는 상하부 기판이 없이 메쉬형 기판으로 열전물질을 지지하게 되므로, 플랙시블하고 경량인 것은 물론이고 기판에 의한 열손실이 최소화되어 열전효율이 극대화되는 효과가 있다.
Abstract translation: 本发明涉及一种能够在由玻璃纤维制成的网状基材上形成热电材料的柔性热电元件及其制造方法。 本发明通过在网状基材上支撑热电材料而获得灵活性并减轻重量，而不需要由氧化铝制成的上下基板，并通过最小化由于基板引起的热损失来最大化热电效应。
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公开(公告)号：KR1020140117721A
公开(公告)日：2014-10-08
申请号：KR1020130031902
申请日：2013-03-26
Applicant: 한국과학기술원
CPC classification number: C23C16/26 , C01B32/186 , C23C14/024 , C23C14/025 , Y10T428/30 , Y10T428/31678 , H01B5/14
Abstract: The present invention relates to a substrate and a method to form a graphene layer and, more specifically, to a substrate used in forming a graphene layer with a structure which can improve a property of the graphene layer formed in an upper part, and a method to form high quality graphene layer using the same. Disclosed is the substrate comprising: a substrate layer; a metal catalyst layer positioned on the upper part of the substrate layer acting as a catalyst in forming the graphene layer; and a stress decrease layer positioned on the middle in between the substrate layer and the metal catalyst layer to decrease the stress of the metal catalyst layer. The present invention forms the stress decrease layer which can decrease the stress of a metallic thin film, thereby improving crystallinity and surface roughness of the metallic thin film, and forming the high quality graphene layer using the same.
Abstract translation: 本发明涉及一种形成石墨烯层的基板和方法，更具体地说，涉及一种用于形成具有可改善上部形成的石墨烯层的性能的结构的石墨烯层的基板，以及一种方法 以形成使用其的高品质石墨烯层。 公开了基板，其包括：基板层; 金属催化剂层，其位于用作形成石墨烯层的催化剂的基材层的上部; 以及位于基材层和金属催化剂层之间的中间的应力降低层，以降低金属催化剂层的应力。 本发明形成应力降低层，其可以降低金属薄膜的应力，从而提高金属薄膜的结晶度和表面粗糙度，并且使用它们形成高质量的石墨烯层。
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公开(公告)号：KR1020130132087A
公开(公告)日：2013-12-04
申请号：KR1020120056198
申请日：2012-05-25
Applicant: 한국과학기술원
IPC: C01B31/02 , C23C16/06 , B01J23/755
CPC classification number: C01B32/186 , B01J19/18 , B01J23/755 , C23C16/06
Abstract: A graphene production apparatus includes a chamber providing a space for processing a substrate. A substrate supporter is located in the chamber for supporting the substrate. A gas supplying unit supplies carbon source gas into the chamber. A lamp unit is installed inside the chamber to be relatively moved against the substrate, and includes a focus unit for focusing a light source and light from the light source to a local position on the substrate for locally heating.
Abstract translation: 石墨烯制造装置包括提供用于处理基板的空间的室。 衬底支撑件位于腔室中用于支撑衬底。 气体供应单元将碳源气体供应到室中。 室内安装灯单元以相对于基板移动，并且包括用于将来自光源的光源和光聚焦到基板上的局部位置以进行局部加热的聚焦单元。
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Patent Agency Ranking
公开(公告)号：KR101244768B1
公开(公告)日：2013-03-19
申请号：KR1020110042508
申请日：2011-05-04
Applicant: 한국과학기술원
IPC: H01L27/115 , H01L21/8247
CPC classification number: G11C16/0416 , B82Y10/00 , B82Y40/00 , H01L29/49 , H01L29/7881 , H01L29/792
Abstract: 본 발명은 높은 일함수 가지며 하부 절연막 열화를 유발하지 않는 새로운 물질인 그래핀(Graphene)을 이용하여 비휘발성 메모리 소자의 메모리 특성을 획기적으로 향상시키는 방법에 관한 것이다.
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公开(公告)号：KR1020130007848A
公开(公告)日：2013-01-21
申请号：KR1020110068442
申请日：2011-07-11
Applicant: 에스케이하이닉스 주식회사 , 한국과학기술원
IPC: H01L21/205
CPC classification number: H01L21/0228 , H01L21/02532 , H01L21/0254 , H01L21/324
Abstract: PURPOSE: A method for fabricating a thin film in a semiconductor device is provided to improve a deposition rate by alternately supplying reaction gas and purge gas. CONSTITUTION: A substrate is arranged in a chamber(S110). A first reactant is supplied to the chamber(S120). The first reactant is absorbed on the substrate. The absorbed first reactant is activated by using a second reactant. A third reactant is supplied to the chamber(S160). [Reference numerals] (AA) Start; (BB) End; (S110) Arranging a substrate in a chamber; (S120) Supplying a first reactant material; (S130) First purge; (S140) Supplying a second reactant material; (S150) Second purge; (S160) Supplying a third reactant material; (S170) Third purge; (S180) Is the desired thickness of a thin film?
Abstract translation: 目的：提供一种在半导体器件中制造薄膜的方法，以通过交替地供应反应气体和吹扫气体来提高沉积速率。 构成：衬底布置在腔室中（S110）。 将第一反应物供给到室（S120）。 第一反应物被吸收在基底上。 吸收的第一反应物通过使用第二反应物活化。 将第三反应物供给到室（S160）。 （附图标记）（AA）开始; （BB）结束; （S110）将基板排列在室内; （S120）提供第一反应物料; （S130）第一次吹扫; （S140）供给第二反应物料; （S150）第二吹扫; （S160）供给第三反应物料; （S170）第三次吹扫; （S180）薄膜的期望厚度是多少？
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公开(公告)号：KR1020120124697A
公开(公告)日：2012-11-14
申请号：KR1020110042508
申请日：2011-05-04
Applicant: 한국과학기술원
IPC: H01L27/115 , H01L21/8247
CPC classification number: G11C16/0416 , B82Y10/00 , B82Y40/00 , H01L29/49 , H01L29/7881 , H01L29/792 , H01L29/1606
Abstract: PURPOSE: A non-volatile memory device using a graphene gate electrode is provided to improve data retention by forming a gate electrode using graphene. CONSTITUTION: A source(S) and a drain(D) are formed on a substrate(20). A tunnel insulating film(21) is successively stacked on a channel area. A gate electrode(24) is made of graphene. A metal electrode(25) forms capping. The gate electrode lowers a tunneling current in an erasing operation.
Abstract translation: 目的：提供使用石墨烯栅电极的非易失性存储器件，以通过使用石墨烯形成栅电极来改善数据保留。 构成：在衬底（20）上形成源极（S）和漏极（D）。 隧道绝缘膜（21）依次堆叠在通道区域上。 栅电极（24）由石墨烯制成。 金属电极（25）形成封盖。 栅电极在擦除操作中降低了隧穿电流。
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公开(公告)号：KR1020120116167A
公开(公告)日：2012-10-22
申请号：KR1020110033753
申请日：2011-04-12
Applicant: 한국과학기술원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/78684 , B82Y10/00 , B82Y30/00 , H01L29/1606 , H01L29/42372 , H01L29/7391 , H01L29/7781 , H01L29/78696 , H01L2924/13088
Abstract: PURPOSE: A graphene device having a physical gap is provided to maintain high electron mobility without the formation of a band gap on a grapheme. CONSTITUTION: A source and a drain are formed on a substrate. A graphene channel is formed on the substrate. A gate is formed on an insulating layer of an upper portion of the graphene channel. The drain is formed in order to be separated from the graphene channel. A laminating structure is formed by the insulating layer and the gate.
Abstract translation: 目的：提供具有物理间隙的石墨烯装置以保持高电子迁移率，而不会在图形上形成带隙。 构成：在衬底上形成源极和漏极。 石墨烯通道形成在基板上。 栅极形成在石墨烯通道的上部的绝缘层上。 形成漏极以便与石墨烯通道分离。 绝缘层和栅极形成层压结构。
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公开(公告)号：KR1020110089501A
公开(公告)日：2011-08-09
申请号：KR1020100008936
申请日：2010-02-01
Applicant: 한국과학기술원
CPC classification number: C23C14/48
Abstract: PURPOSE: A method of forming a graphene layer is provided to uniformly form a graphene layer on a metallic thin layer since an accurate amount of carbon ion depending on the maximum carbon solubility of the metallic thin layer is injected onto the metallic thin layer using an ion injector and then the injected carbon ion is thermally treated to form the graphene layer. CONSTITUTION: A method of forming a graphene layer comprises next steps. A metallic thin layer is formed on a substrate(S10). Carbon ion is injected onto the formed metallic thin layer(S20). The formed metallic thin layer is crystalized(S30). The crystallization is performed on the formed metallic thin layer through thermal treatment at a temperature of 800°C ~ 1000°C. The carbon ion injected onto the metallic thin layer is thermally treated to form a graphene layer on the metallic thin layer(S40).
Abstract translation: 目的：提供形成石墨烯层的方法以在金属薄层上均匀地形成石墨烯层，因为根据金属薄层的最大碳溶解度的精确量的碳离子注入到金属薄层上，使用离子 然后将注入的碳离子热处理以形成石墨烯层。 构成：形成石墨烯层的方法包括下面的步骤。 在基板上形成金属薄层（S10）。 将碳离子注入形成的金属薄层上（S20）。 形成的金属薄层结晶化（S30）。 通过在800℃〜1000℃的温度下进行热处理，在形成的金属薄层上进行结晶化。 注入到金属薄层上的碳离子被热处理以在金属薄层上形成石墨烯层（S40）。
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