公开(公告)号：JPH04218945A

公开(公告)日：1992-08-10

申请号：JP7649291

申请日：1991-04-09

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768

Abstract: PURPOSE:To obtain a high performance and highly integrated semiconductor circuit device with a reduced parasitic capacity by making the area of a through hole smaller than that of a contact hole. CONSTITUTION:A contact hole CH is formed in an insulating film 201 provided on a semiconductor substrate 101. Also, a first layer insulation film 202 is provided on a first winding 103 and brought into contact with a second layer wiring 105 via conductive material 104 for burying a first through hole TH1. Further, a second layer insulation film 203 is provided on the second layer wiring 105 and a third layer wiring layer 107 coming into contact with the second layer wiring layer 105 via conductive material 106 for burying a second through hole TH2 formed in the insulation film 203 is formed on the second layer insulation film 203. In this case, the diameter of an upper opening is made smaller than that of a lower opening. That is, the area of the first through hole TH1 is made smaller than that of the contact hole CH and the area of the second through hole TH2, smaller than that of the first through hole TH1.

公开(公告)号：JPH0437067A

公开(公告)日：1992-02-07

申请号：JP14373290

申请日：1990-05-31

Applicant: CANON KK

Inventor： IKEDA ATSUSHI ,  NAKAMURA YOSHIO

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L23/485 ,  H01L29/41 ,  H01L29/45 ,  H01L29/78

Abstract: PURPOSE:To manufacture a miniaturized electrode for a semiconductor capable of performing the high speed driving operation by a method wherein the electrode substantially taking a prism shape is directly connected to a semiconductor region while the side lengths of the electrode in contact with semiconductor region are specified. CONSTITUTION:An electrode 106 in a rectangular parallelopiped shape as a prism in length L, width W and height H is arranged on a semiconductor region 103 provided on the main surface of a semiconductor substrate 101 to be directly connected thereto and covered with an insulating film 110. On the other hand, a contact hole is made to meet the dimensional requirements for thickness H of the insulating layer of the hole of 0.5-0.8 mum, the long side length of 1-several scores of mum, the short side length W of 0.1-0.5 mum and the inequality of L>H>W and then the electrode 106 is formed by filling up said hole with the conductive material comprising the electrode 106 by sputtering process or CVD process etc.

公开(公告)号：JPH03111568A

公开(公告)日：1991-05-13

申请号：JP25001489

申请日：1989-09-26

Applicant: CANON KK

Inventor： ICHIKAWA TAKESHI ,  SHINDO HISASHI ,  IKEDA ATSUSHI ,  OMI KAZUAKI ,  MATSUMOTO SHIGEYUKI

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/18 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To form an Al-based metal excellent in quality as a conductor at a desired position with good controllability by introducing gaseous H2 contg. alkylaluminum hydride and copper atom into a deposited film forming space contg. a substrate provided with the electron-donative surface and non-electron- donative surface at a specified temp. CONSTITUTION:For example, a reaction tube 2 for forming a deposited film forming space is evacuated to a specified vacuum by evacuating equipment 9, and an Si wafer 1 as the substrate is fixed to a holder 3 through a conveyance chamber 10. The surface of the wafer 1 is kept by a heater 4 at a temp. higher than the decomposition temp. of dimethylaluminum hydride(DMAH) and lower than 450 deg.C. Subsequently, DMAH, H2, Si2H6 and Cu(C5H7O2)2 are supplied from gas lines 20-23 with H2 as the carrier gas and introduced into the reaction tube 2 through a mixer 5 to deposit an Al-Si-Cu film selectively on the electron-donative surface of the wafer 1. A semiconductor device highly integrated and made highly efficient in the semiconductor technical field is provided at a low cost by this method.

公开(公告)号：JPH03110841A

公开(公告)日：1991-05-10

申请号：JP25001989

申请日：1989-09-26

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI ,  OMI KAZUAKI

IPC: C23C16/06 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205

Abstract: PURPOSE:To make it possible to deposit a low-resistance, dense and flat Cu film on a substrate by a method wherein copper-containing compound gas and hydrogen gas are introduced in a space, in which the substrate having an electron donative surface is arranged, and the copper film is formed on the electron donative surface. CONSTITUTION:In a subliming chamber 6 for producing raw gas, H2 gas or Ar gas which is used as carrier gas is made to flow on bisacetylacetonato copper Cu(AcAc)2 to produce gaseous Cu(AcAc)2 and this gaseous Cu(AcAc)2 is transported to a mixer 5. H2 gas which is used as reaction gas is transported to the mixer 5 from another path. Moreover, a Cu film is deposited on the surface of a substrate 1 by a simple thermal reaction only in a reaction system of Cucontaining compound gas (raw gas) and hydrogen gas. That is, mixed gas containing Cu(AcAc)2 gas, which is used as the raw gas, and the H2 gas, which is used as reaction gas, which are used as the constituent elements of the deposited film, is fed on the substrate 1 heated in a proper temperature range and by setting properly the pressure in a space, Cu is separated out on the surface of the substrate, a continuous film is formed and this continuous film is grown. Thereby, a low-resistance, dense and flat Cu film can be deposited on the substrate.

公开(公告)号：JPH03110839A

公开(公告)日：1991-05-10

申请号：JP25001689

申请日：1989-09-26

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI ,  OMI KAZUAKI

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/16 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205

Abstract: PURPOSE:To make it possible to form a W film of good quality as a conductor with good controllability and at a desired position by a method wherein the tungsten film is selectively formed on the electron donative surface A of a substrate having surface A and a non-electron donative surface B in an atmosphere containing tungsten atom-containing compound gas and hydrogen gas. CONSTITUTION:A substrate 1 having an electron donative surface A and a non-electron donative surface B is arranged in a space 2 for depositing film. Then, tungsten atom-containing compound gas and hydrogen gas are introduced in the space for depositing the film and a tungsten film is selectively formed on the surface A. Thereby, a low-resistance, dense and flat W film can be selectively deposited on the substrate.