公开(公告)号：JPH02262366A

公开(公告)日：1990-10-25

申请号：JP8158789

申请日：1989-04-03

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: H01L27/14 ,  H01S5/00 ,  H01S5/026 ,  H01S3/18

Abstract: PURPOSE:To control light output and wavelength simultaneously by for example providing waveguides to guide detected light and three or more photodetectors that are optically combined with the waveguides and further providing wavelength selecting waveguide type optical component wave devices or distributed reflectors between two or more photodetectors. CONSTITUTION:This device is equipped with waveguides 1-5 which guide detected light and three or more photodetectors 8-10 which are optically combined with the waveguides 1-5 and then, wavelength selecting waveguide type optical component wave devices or distribution reflectors 6 and 7 are provided between two or more photodetectors 8-10 and waveguides 1-5; besides, the foregoing waveguides 1-5, the photodetectors 8-10, and the waveguide type optical component wave devices or the distributed refractors 6 and 7 are formed in a monolithic shape. For example, the foregoing waveguide type optical wave component devices or the distributed reflectors 6 and 7 consist of grating in which Bragg wavelengths become variable according to current injection; besides, they have current injection means 11 and 12. Then wavelengths of light to be detected are detected from differential signals outputted by the photodetectors 8, 10.

公开(公告)号：JPH0290583A

公开(公告)日：1990-03-30

申请号：JP24096588

申请日：1988-09-28

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: H04J14/00 ,  G02B6/122 ,  H01S5/00 ,  H01S5/028 ,  H01S5/12 ,  H01S5/125 ,  H01S5/187 ,  H01S5/34 ,  H01S5/40 ,  H04J14/02

Abstract: PURPOSE:To obtain a semiconductor laser which has such optical properties as astigmatism small in variability, a near field pattern, and others and enables the projection of two or more laser beams with different wavelengths which are excellent in stability by a method wherein two or more active stripe regions are arranged on the same substrate. CONSTITUTION:An active layer is composed of a light trapping layer 11, a well I layer 12, a barrier layer 13, a well II layer 14, and a light confining layer 15 deposited in this order to a substrate 1 side, and the oscillation wavelengths of the energy gaps of the wells I and II are 869nm and 808nm respectively. And, usually if a barrier is 100Angstrom or more in thickness, electron levels of wells are prevented from interferring with each other, so that the wells are made to oscillate independent of each other. The front of a laser, where an electrode 8 is provided, has a ridge type structure which constitutes an active region. The ridge type structure is formed in such a manner that a notch is provide up to the upside of an optical guide layer 4 through a partial selective etching after the layers have been laminated. At the rear of the active region, a diffracive grating is formed on the optical guide layer 4. The formation of the diffraction grating is made by changing the condition of a two light flux interference exposure method at the formation of resist. And, two or more energy levels different from each other in energy gap are formed in an active layer.

公开(公告)号：JPH01313980A

公开(公告)日：1989-12-19

申请号：JP14486788

申请日：1988-06-14

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/06 ,  H01S5/10 ,  H01S5/22 ,  H01S5/227

Abstract: PURPOSE:To increase conversion efficiency, and realize high density integration by arranging a second harmonic wave generating region composed of II-VI compound semiconductor crystal, on a semiconductor laser layer composed of III-V compound semiconductor, and providing a diffraction grating at a position, in the region, where laser light diffracted by a diffraction grating in a semiconductor laser arrives. CONSTITUTION:A second harmonic wave generating region (SHG region) II is constituted of II-VI compound semiconductor crystal. For example, epitaxial growth is enabled on an AlGaAs system semiconductor laser, and the SHG region II can be easily formed in a unified body. Since the fundamental wave from the semiconductor laser I couples with the SHG region II without passing the external space, the intensity of the fundamental wave can be increased. By a diffraction grating GI in the semiconductor laser I, the fundamental wave generated from the semiconductor laser I is diffracted in the direction of the SHG region II and introduced. By diffracting the introduced fundamental wave with a diffraction grating GII in the SHG region II, the fundamental wave is effectively converted into the second harmonic wave. Thereby high density integration is enabled, and the conversion efficiency is increased.

公开(公告)号：JPH01308091A

公开(公告)日：1989-12-12

申请号：JP13842088

申请日：1988-06-07

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: H01S5/00 ,  H01S5/183

Abstract: PURPOSE:To improve the efficiency of carrier recombination and to condense a light at a core by pressing an active region cylindrically to a substrate and providing a clad layer having a low refractive index around it and a core region therein. CONSTITUTION:A cylindrical hole 10 having 3mum of diameter and 10mum of depth formed by etching is provided at an N type Al0.5Ga0.5As substrate 17, a P type GaAs active region 15 is interposed between an N type Al0.3Ga0.7As clad layer 16 at its outside and a P type Al0.5Ga0.95As core layer 14 at its inside, a carrier recombination occurs in the cylindrical region, and a light is generated. Since the clad layer has a smaller effective refractive index than that of the active region or the core region, the light is condensed at the center of the cylinder.

公开(公告)号：JPH01207985A

公开(公告)日：1989-08-21

申请号：JP3195588

申请日：1988-02-16

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: H01S5/00 ,  H01S5/042

Abstract: PURPOSE:To decrease damage at edge surfaces, to stabilize a transverse mode, to keep a threshold current from rising and to restrain a light emission efficiency from decreasing, by making the longitudinal direction of a stripe active area at right angle to light resonance surfaces. CONSTITUTION:There is a stripe active area 28 which seemingly has a large upward refractive index, inside a laser resonance 27 which is made of resonance surfaces 25 and 26. A window 29 for current injection is formed to cross a stripe diagonally. Current is injected into the center of the stripe active area so that a peak of an injection carrier density distribution does not concentrate upon one place. A refractive index distribution is made asymmetrical inside the active area by using a plasma effect and the light is deflected toward a high retractive index side to gain an oblique output light. By this, there is no trouble since the longitudinal direction of the stripe active area is at right angle to the resonance surface. Therefore, damage at edge surfaces is decreased, a transverse mode is stabilized, a shreshold current is restrained from rising and a light emission effect is restrained from decreasing.

公开(公告)号：JPH01155675A

公开(公告)日：1989-06-19

申请号：JP31419787

申请日：1987-12-14

Applicant: CANON KK

Inventor： IKEDA SOTOMITSU

IPC: H01S5/00 ,  H01S5/042

Abstract: PURPOSE:To obtain laser rays variant in a direction of linear polarization and wavelength by a method wherein two or more semiconductor lasers provided with active layers epitaxially grown through a vapor phase growth are laminated on a substrate provided with surfaces different from each other in a facial index. CONSTITUTION:A resist film is provided onto a P -GaAs substrate 21 whose upper face is a (001) face, and the resist film is removed after the formation of a cutout with an angle of 45 degrees formed through a wet etching on the substrate 21. Next, an epitaxial film 24 and a metal mask 25 are formed, a resist film 26 is formed thereon so as to etch the metal mask 25 using the resist film 26 as a mask, and a Zn diffused region 22 is formed after the removal of the resist film 26. Then, a SiO2 film 12 is formed after the metal mask 25 is eliminated, an Au/Au-Ge layer 11a is evaporated after a current injecting window section is bored, a resist film 27 is formed thereon, an n-side electrode 11 is constructed through etching, and a P-side electrode 13 is provided after the removal of the resist film 27.