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    2.
    发明专利
    未知

    公开(公告)号：DE69535550T2

    公开(公告)日：2008-04-30

    申请号：DE69535550

    申请日：1995-09-28

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  YAMANOBE MASATO ,  NOMURA ICHIRO ,  SUZUKI HIDETOSHI ,  BANNO YOSHIKAZU ,  TSUKAMOTO TAKEO ,  KAWATE SHINICHI ,  TAKEDA TOSHIHIKO ,  YAMAMOTO KEISUKE ,  SANDO KAZUHIRO ,  HAMAMOTO YASUHIRO

    IPC: H01J9/02 ,  H01J1/316

    Abstract: In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing.a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.

    3.
    发明专利
    未知

    公开(公告)号：AT193155T

    公开(公告)日：2000-06-15

    申请号：AT95304815

    申请日：1995-07-10

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  OHNISHI TOSHIKAZU ,  YAMANOBE MASATO ,  IWASAKI TATSUYA ,  KAWADE HISAAKI

    IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30

    Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.

    4.
    发明专利
    未知

    公开(公告)号：DE3716191A1

    公开(公告)日：1987-11-19

    申请号：DE3716191

    申请日：1987-05-14

    Applicant: CANON KK

    Inventor： MIYAZAWA SEIICHI ,  HARA TOSHITAMI ,  NOJIRI HIDETOSHI ,  SEKIGUCHI YOSHINOBU ,  HASEGAWA MITSUTOSHI ,  IKEDA SOTOMITSU

    IPC: G11B7/125 ,  G11B7/14 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19 ,  H01S3/02 ,  H01S3/08

    Abstract: A semiconductor laser array 21 is disclosed, comprising plural semiconductor laser elements each emitting light from two end faces (26,27) constituting resonant planes and monolithically formed on a semiconductor substrate, in which the mutual angle of the beams emerging from one end face of semiconductor lasers is different from that from the other end face and in which said beam angle is selected as a non-zero finite value at least at one end. This may be achieved where the current injection area of each laser element is limited to a stripe-shaped area 24,25 by making stripe-shaped areas of curved or bent form.

    5.
    发明专利
    未知

    公开(公告)号：DE69627951D1

    公开(公告)日：2003-06-12

    申请号：DE69627951

    申请日：1996-10-14

    Applicant: CANON KK

    Inventor： MOTOI TAIKO ,  TSUKAMOTO TAKEO ,  IKEDA SOTOMITSU ,  NAKAMURA KUMI ,  KOBAYASHI TOYOKO ,  MIURA NAOKO

    IPC: H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

    Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate, an electroconductive film connecting the device electrodes and an electron-emitting region formed in the electroconductive film. The electron-emitting device is manufactured by (1) applying an ink containing the material for producing the electroconductive film to a predetermined position of the substrate in the form of one or more than one drops by means an ink-jet apparatus, (2) drying and/or baking the applied drop(s) to turn the drop(s) into an electroconductive thin film and (3) applying a voltage to the pair of device electrodes to flow an electric current through the electroconductive film and produce an electron-emitting region. The steps (1) and (2) are so conducted that the electroconductive film formed by the steps (1) and (2) have a latent image apt to produce an electron-emitting region by the Joule's heat generated by the step (3).

    6.
    发明专利
    未知

    公开(公告)号：DE69033645T2

    公开(公告)日：2001-05-10

    申请号：DE69033645

    申请日：1990-03-29

    Applicant: CANON KK

    Inventor： SHIMIZU AKIRA ,  IKEDA SOTOMITSU

    IPC: H01S5/06 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H01S5/32 ,  H01S5/10

    Abstract: A semiconductor laser device capable of emitting lights of different wavelengths has a substrate (1), a first light-emitting layer (11a) provided on the substrate (1), and a second light-emitting layer (11b) provided on the substrate (1) and having a greater band gap than the first light-emitting layer. A barrier layer (12) is disposed between the first and second light-emitting layers (11a, b). The barrier layer (12) has a band gap greater than those of the first (11a) and second (11b) light-emitting layers. The band gap and the thickness of the barrier layer (12) are determined to be large enough to create, in response to injection of carriers to the light-emititng layers, a state in which the carrier density in the second light-emitting layer (11b) is made higher while the carrier density in the first light-emitting layer (11a) is made lower than those which would be obtained when the barrier layer (12) is omitted. The device further has a pair of cladding layers (3, 5) sandwiching therebetween the first light-emitting layer (11a), the barrier layer (12) and the second light-emitting (11b) layer, the cladding layers (3, 5) having smaller refractive index values than the first and second light-emitting layers (11a, b). The device further has electrodes (7, 8) for supplying electrical currents to the first and second light-emitting layers (11a, b).

    Apparatus for manufacturing electron source and image forming apparatus
    10.
    发明专利
    Apparatus for manufacturing electron source and image forming apparatus 未知

    公开(公告)号：AU2495595A

    公开(公告)日：1996-01-25

    申请号：AU2495595

    申请日：1995-07-12

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  YAMANOBE MASATO ,  KAWADE HISAAKI ,  OHNISHI TOSHIKAZU ,  IWASAKI TATSUYA

    IPC: H01J1/316 ,  H01J9/02 ,  H01J1/15

    Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.

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