公开(公告)号：JPS6254976A

公开(公告)日：1987-03-10

申请号：JP19619185

申请日：1985-09-04

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  SANO MASAFUMI ,  TSUDA HISANORI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To improve light emitting efficiency and reproducibility by providing at least a pair of electrodes electrically connected with a light emitting layer, which is formed of a nonsingle crystal silicon which contains hydrogen atoms so that the optical band gap is 2.0eV or higher. CONSTITUTION:A light emitting element is composed of a P-type conductivity layer, the first semiconductor intermediate layer I, an N-type conductivity layer and a light emitting layer 104 made of the second semiconductor intermediate layer II,and an electrode 105 formed on a light emitting layer 104 on an electrode 103 formed on a substrate 101. The hydrogen atoms in the light emitting layer compensates free dangling bond of silicon atoms, the content is an important factor for affecting the semiconductor layer of the formed layer, the optical characteristic and the light emitting characteristic of the element, and the content of the hydrogen atoms is preferably 0.1-40atom% to the silicon atoms. The optical band gap Egopt of each layer for forming the light emitting layer is 2.0eV or higher. Thus, the light emitting efficiency and the reproducibility can be enhanced to remarkably increase the stability in the light emitting characteristic and the life.

公开(公告)号：JPS6254482A

公开(公告)日：1987-03-10

申请号：JP19508185

申请日：1985-09-03

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  SANO MASAFUMI ,  TSUDA HISANORI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To improve light emitting efficiency and reproducibility, by forming a layer as multilayer structure constituted by laminating periodically a unit of the first layer region composed of amorphous silicon containing by hydrogen atom and the second layer region whose optical band gap is different from the first layer region. CONSTITUTION:A light emitting element is constituted of a lower electrode 102 formed on a substrate 101, a lower insulating layer 103, a light emitting layer 104, an upper insulating layer 105 and an upper electrode 106 formed on insulating layer 105. The first layer region I where a light emitting layer is composed of a non-Si:H and the second layer region whose optical band Eg opt is different from that of the first layer region I are united into a unit which is laminated periodically to constitute a multilayer structure. As to the first layer region I and the second layer region II, each of their thickness is selected so as to exhibit the size-effect in quantum mechanics, and they are alternately laminated to constitute a superlattice structure. The optical band gap Eg opt II of the second layer region II is made larger than the optical band gap Eg opt I of the first layer region I.

公开(公告)号：JPS6222426A

公开(公告)日：1987-01-30

申请号：JP16113885

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To obtain a film having high quality without damaging the interfaces of each layer film in multilayer films by degrading a raw-material gas in a photolytic manner, not decomposed during glow discharge. CONSTITUTION:A reaction chamber 1, a temperature control means heating or cooling a substrate set into the reaction chamber, a raw-material gas introducing means for introducing two kinds or more of raw-material gases into the reaction chamber, a light source 15, which projects at least one kind of beams into the reaction chamber so as to deposit thin-films on the substrate controlled at a fixed temperature by the temperature control means in the reaction chamber and decomposes the raw-material gases, a film thickness measuring means measuring the thickness of the films deposited on the substrate in the reaction chamber, and a control means controlling the raw-material gas introducing means and the light source on the basis of the measured value of the measuring means are provided. Accordingly, all of the flow control, the mixing of the gases, temperature control and a series of operation can be conducted automatically by a system controller, thus also controlling the thickness of each layer of multilayer films.

公开(公告)号：JPS6222425A

公开(公告)日：1987-01-30

申请号：JP16113785

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To obtain a film having high quality without damaging the interfaces among each layer in multilayer films by degrading a raw-material gas in a photolytic manner, not decomposed during glow discharge or decomposing the raw-material gas by using radical seeds taken out of glow discharge. CONSTITUTION:When raw-material gases fed into a reaction chamber 1 are brought to a stationary state, radical seeds generated in a plasma chamber 4 are diffused in the reaction chamber 1 through a gate valve 5 and a variable orifice 6. For generate plasma in the plasma chamber 4, reaction gases, such as Ar, H2, CF4, etc. are fed into the plasma chamber 4 through a gas supply pipe 24, power is fed into the plasma chamber 4 from a power supply 7 at RF or microwaves, and electricity is discharged in the plasma chamber 4. Radical seeds having long life generated in the plasma chamber 4 can be diffused into the reaction chamber 1 through the gate valve 5 and the variable orifice 6. Ion seeds are sucked to a discharge electrode in the plasma chamber 4 at that time, thus taking out only neutral radical seeds.

公开(公告)号：JPS6222424A

公开(公告)日：1987-01-30

申请号：JP16113685

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To obtain a film having high quality without damaging the interfaces among each layer in multilayer films by degrading a raw-material gas in a photolytic manner, not decomposed during glow discharge and decomposing the raw-material gas by using radical seeds taken out of glow discharge. CONSTITUTION:A reaction chamber 1, a temperature control means heating or cooling a substrate set into the reaction chamber, a raw-material gas introducing means for introducing two kinds or more of raw-material gases into the reaction chamber, a decomposing means decomposing the raw-material gases in the reaction chamber so as to deposit thin-films on the substrate controlled at a fixed temperature by the temperature control means, and a control means controlling the gas introducing means and the decomposing means. The decomposing means has a light source 22, which projects beams into the reaction chamber and decomposes the raw-material gases, and a means, which introduces radical seeds generated in a plasma chamber connected to the reaction chamber into the reaction chamber and decomposes the raw-material gases. The control means has a means controlling the changeover of the seeds of the raw-material gases, the timing of beam projection from the light source 22 and an introduction into the reaction chamber of the radical seeds at the timing previously set so as to deposit the thin-films consisting of multilayers on the substrate.

公开(公告)号：JPS6222422A

公开(公告)日：1987-01-30

申请号：JP16113485

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To deposit an amorphous semiconductor multilayer thin-film on a supporter with excellent controllability by providing a reaction chamber, a raw-material gas introducing means, a decomposition-energy introducing means, a gas introducing means and a control means controlling the decomposition energy introducing means. CONSTITUTION:The combination of a turbo-molecular pump or diffusion pump and a rotary pump is preferably as an exhauster 8 and the combination of a mechanical booster pump and the rotary pump is desirable as an exhauster 9 in order to be able to adjust exhaust capacity in response to pressure in a reaction chamber 1 and the flow rate of a reaction gas 000required on the formation of a deposit film. Valve open close sequence control, the control of gas pressure, the control of the flow rate of the gas, the control of a light source/plasma and temperature control (the substrate/the gas) are conducted by a system controller on the basis of input informations (measured values), such as concentration in the reaction chamber of a raw material gas, the flow rate of the raw material gas, the degree of vacuum in each chamber, the film thickness of the deposited film, the temperature of a supporter (the substrate), the temperature of the gas, etc.

公开(公告)号：JPS6222421A

公开(公告)日：1987-01-30

申请号：JP16113385

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To deposit amorphous semiconductor multilayer thin-films on a susceptor with excellent controllability by changing over two kinds or more of raw material gases at timing previously set so that the multilayer thin-films are deposited on a substrate, introducing the gases into a reaction chamber and controlling the timing of the projection of beams having high energy. CONSTITUTION:A bringing to a stationary state of the flow rate (or pressure) of a raw material gas fed into a reaction chamber 1 is decided, a light source 22 is operated at a point of time when the flow rate (or pressure) or the gas reaches the stationary state, the inside of the reaction chamber 1 is irradiated by beams having predetermined intensity, and a reaction gas in the reaction chamber 1 is degraded in a photolytic manner. When beams are projected completely for a fixed time, beam projection is stopped, and the supply of the raw material gas into the reaction chamber 1 is suspended. Since the film thickness of a thin-film, which is decomposed through beam projection and deposits on a substrate, depends upon the kinds of the gas, the flow rate of the gas, gas pressure, a substrate temperature, the kinds of the light source, the intensity of beams and the time of beam projection and measures size known by experience, these parameters are inputted previously to a memory in a CPU for a system controller, thus preparing the thin-film in desired film thickness.

公开(公告)号：JPS6222420A

公开(公告)日：1987-01-30

申请号：JP16113285

申请日：1985-07-23

Applicant: CANON KK

Inventor： TAKASU KATSUJI ,  TSUDA HISANORI ,  SANO MASAFUMI ,  HIRAI YUTAKA

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To obtain a film having high quality without damaging the interfaces among each layer of multilayer films by degrading a raw material gas in a photolytic manner, not decomposed during glow discharge or decomposing it by using radical seeds taken out of glow discharge. CONSTITUTION:The inside of a reaction chamber 1 and the inside of a plasma chamber 4 are evacuated, and a substrate in the reaction chamber 1 is heated at a fixed temperature. A bringing to a stationary state of the flow rate (or pressure) of a raw material gas fed into the reaction chamber 1 is decided, a light source 22 is operated at a point of time when the flow rate reaches the stationary state, the inside of the reaction chamber 1 is irradiated by beams having predetermined intensity, and a reaction gas in the reaction chamber 1 is degraded in a photolytic manner. When beams are projected for a fixed time, beam projection is stopped, and the supply of the raw material gas into the reaction chamber 1 is interrupted. Since the film thickness of a thin-film, which is decomposed by beam projection and deposits on the substrate, depends upon the kind of the gas, the flow rate of the gas, gas pressure, a substrate temperature, the kind of the light source, the intensity of beams, and the time of beam projection and measures size known by experience, these parameters are inputted previously to a memory in a CPU for a system controller, thus preparing the thin-film in desired film thickness.

公开(公告)号：JPS61222284A

公开(公告)日：1986-10-02

申请号：JP6208885

申请日：1985-03-28

Applicant: CANON KK

Inventor： HIRAI YUTAKA ,  SANO MASAFUMI ,  TSUDA HISANORI ,  TAKASU KATSUJI

IPC: H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

Abstract: PURPOSE:To emit light having an arbitrary light emitting wavelength, by constituting a semiconductor having a super-lattice structure by an amorphous semiconductor, thereby changing effective band gap by an electric field applied from the outside. CONSTITUTION:A semiconductor having a super-lattice structure is constituted by an amorphous semiconductor. For example, an electrode 4 is provided on a substrate 1. A first light emitting layer 2 (e.g., a-SiC:H) is provided between insulating layers 3 (e.g., Si-N:H) on the electrode 4. Then, on the insulating layer 3, a second light emitting layer 6 is provided between a transparent electrodes 5 and 7. The second light emitting layer 6 is formed by doping B and P in an a-SiH layer, which is prepared by an optical CVD method at a substrate temperature of 50 deg.C. The layer 6 has an N-I-P-I structure. In the light emitting element, the first light emitting layer 2 is made to emit light by an AC power source 8. The second light emitting layer 6 is excited by said light, and the light is emitted from the layer 6. The band gap of the second light emitting layer is changed by a power source 6. Thus the wavelength of the emitted light can be modulated.

公开(公告)号：JPS61220337A

公开(公告)日：1986-09-30

申请号：JP6053385

申请日：1985-03-27

Applicant: CANON KK

Inventor： TSUDA HISANORI ,  SANO MASAFUMI ,  TAKASU KATSUJI ,  OSADA YOSHIYUKI ,  KOMATA TOMOJI ,  HIRAI YUTAKA

IPC: H01L21/31 ,  H01L21/314 ,  H01L21/76

Abstract: PURPOSE:To form an element separation region on a substrate by a method wherein a gas which is activated by absorbing light energy is introduced into a reaction chamber and a light beam is applied to the position where the ele ment separation region is to be formed to create chemical reaction and form an insulation region. CONSTITUTION:A heater 4 for heating a substrate 3 is provided in a substrate holder 2. An introduction inlet 5 and an exhaust outlet 6 are provided to a reaction chamber 1 and an activating gas and an oxidizing gas are introduced into the chamber 1. A beam 8 is applied to the part of the substrate 3 where an element separation region is formed through the window 7 of the reaction chamber 1. The beam 8 consists of a beam emitted by a light source 9. The emitted beam is subjected to square beam correction by a slit 10 provided for regulating amount of the light. The corrected beam is converged by a beam scanning system 13, constituted by a mirror 11 and cylindrical lenses 12a and 12b to be the beam 8. The beam 8 is moved on the substrate 3 by the beam scanning system 13 to form the element separation region of a required pattern on the substrate 3.