公开(公告)号：FR2774214A1

公开(公告)日：1999-07-30

申请号：FR9800899

申请日：1998-01-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： DI CIOCCIO LEA

IPC: H01L21/02 ,  H01L21/04 ,  H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L21/265

Abstract: A semiconductor-on-insulator structure is produced by transfer and cleavage operations using an initial substrate (10) having an ion implanted cleavage zone just below a semiconductor layer (12) to be transferred. A structure, comprising a semiconductor layer (12) on a support substrate (20), is produced by (a) forming the semiconductor layer (12) on an initial substrate (10) and implanting ions just below the layer to form a cleavage zone defining an initial substrate surface layer in contact with the semiconductor layer (12); (b) transferring the initial substrate (10) onto the support substrate (20) such that the semiconductor layer (12) is bonded to the support substrate; (c) heat treating to cleave the initial substrate along the cleavage zone; and (d) removing the residual surface layer to expose the semiconductor layer (12).