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    PROCESS FOR SEPARATING AT LEAST TWO MATERIALS COMPOSING ONE STRUCTURE TOUCHING EACH OTHER BY ION IMPLANTATION
    1.
    发明专利
    PROCESS FOR SEPARATING AT LEAST TWO MATERIALS COMPOSING ONE STRUCTURE TOUCHING EACH OTHER BY ION IMPLANTATION 失效

    公开(公告)号：JPH10189474A

    公开(公告)日：1998-07-21

    申请号：JP33904997

    申请日：1997-12-09

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BRUEL MICHEL ,  DI CIOCCIO LEA

    IPC: H01L21/265 ,  C30B31/22 ,  C30B33/00 ,  G01L1/14 ,  G01L9/00 ,  H01L21/02 ,  H01L27/12

    Abstract: PROBLEM TO BE SOLVED: To separate two compositional materials being bonded through interatomic bond by introducing ions having energy sufficient for reaching an interface at a dose sufficient for breaking interatomic bond. SOLUTION: A compositional material 11 is silicon oxide deposited on a compositional material 12, i.e., a single crystal silicon substrate, by low pressure CVD. Energy of ions being implanted into the interface 13 through the surface 14 of a parallel layer 11 is set at 100-140keV, for example. Heat treatment process following to the ion implantation process can be carried out at 500 deg.C for 30min, for example. The implanted ions vary the interatomic bond of the compositional material on the opposite sides of the interface 13. These ions are introduced into the interface 13 at a specified dose. The dose is set at a level suitable for separating two compositional materials, e.g. 5×10 ions/cm .

    METHOD OF TRANSFERRING A LAYER ONTO A LIQUID MATERIAL
    4.
    发明申请
    METHOD OF TRANSFERRING A LAYER ONTO A LIQUID MATERIAL 审中-公开
    将层转移到液体材料的方法

    公开(公告)号：WO2009019265A2

    公开(公告)日：2009-02-12

    申请号：PCT/EP2008060261

    申请日：2008-08-05

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  BORDEL DAMIEN ,  DI CIOCCIO LEA

    Inventor： BORDEL DAMIEN ,  DI CIOCCIO LEA

    IPC: H01L21/762 ,  H01L21/20

    CPC classification number: H01L21/2007

    Abstract: The invention relates to a method for transferring a layer (2) to be transferred onto a support, comprising: - the transfer of said layer, assembled on an initial substrate (4), onto a liquid layer (10) previously deposited on said support (12), - the release of said layer from the initial substrate (4), by chemical attack, - the evacuation of the liquid layer (10) to allow the molecular adhesion of the layer to the support (12).

    Abstract translation: 本发明涉及一种用于转移待转移到载体上的层（2）的方法，包括：将组装在初始衬底（4）上的所述层转移到预先沉积在所述载体上的液体层（10）上， （12）， - 通过化学侵蚀从所述初始基底（4）释放所述层， - 液体层（10）的抽空以使所述层与所述载体（12）分子粘附。

    QUASI-VERTICAL POWER SEMICONDUCTOR DEVICE ON A COMPOSITE SUBSTRATE
    5.
    发明申请
    QUASI-VERTICAL POWER SEMICONDUCTOR DEVICE ON A COMPOSITE SUBSTRATE 审中-公开
    复合基板上的垂直功率半导体器件

    公开(公告)号：WO2004027878A3

    公开(公告)日：2004-05-06

    申请号：PCT/FR0350045

    申请日：2003-09-01

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  SOITEC SILICON ON INSULATOR ,  TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

    Inventor： TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

    IPC: H01L29/20 ,  H01L29/24 ,  H01L29/47 ,  H01L29/868 ,  H01L29/872 ,  H01L27/08

    CPC classification number: H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/868

    Abstract: The invention relates to a power semiconductor device made of an epitaxied semiconductor material on a stacked structure (10), comprising a semiconductor material layer (13) which is applied to a first surface of a support substrate (11) and is integral with the support substrate (11) by means of an insulating layer (12), said support substrate comprising electric conduction means between the first surface and the second surface, the applied semiconductor material layer (13) acting as an epitaxy support layer for the epitaxied semiconductor material (14, 15).Means for electric connection (16, 17) of said device are provided on the epitaxied semiconductor material and on the second surface of the support substrate, whereby an electric connection via the electrically insulating layer and electric conduction means electrically links the epitaxied semiconductor material (14, 15) to electric connection means (17) provided on the second surface of the support substrate (11).

    Abstract translation: 本发明涉及一种由堆叠结构（10）上的表面半导体材料制成的功率半导体器件，包括半导体材料层（13），其被施加到支撑衬底（11）的第一表面并与支撑体 衬底（11），所述支撑衬底包括在第一表面和第二表面之间的导电装置，所施加的半导体材料层（13）用作表面半导体材料的外延支撑层（13） 所述装置的电连接（16,17）的尺寸设置在所述表面半导体材料和所述支撑基板的所述第二表面上，由此经由所述电绝缘层和导电装置的电连接将所述 表面半导体材料（14,15）设置在设置在支撑基板（11）的第二表面上的电连接装置（17）上。

    METHOD FOR PRODUCING A STRUCTURE SUCH AS AN INSULATOR SEMICONDUCTOR AND IN PARTICULAR SiCOI
    9.
    发明申请
    METHOD FOR PRODUCING A STRUCTURE SUCH AS AN INSULATOR SEMICONDUCTOR AND IN PARTICULAR SiCOI 审中-公开
    用于生产绝缘体半导体和特殊SiCOI的结构的方法

    公开(公告)号：WO9939371A3

    公开(公告)日：1999-10-07

    申请号：PCT/FR9900155

    申请日：1999-01-27

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  CIOCCIO LEA DI

    Inventor： DI CIOCCIO LEA

    IPC: H01L21/02 ,  H01L21/04 ,  H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L21/20

    CPC classification number: H01L21/7605 ,  H01L21/0475 ,  H01L21/7602 ,  H01L21/76254

    Abstract: The invention concerns a method for producing a structure comprising a support substrate (20) and a layer of semiconductor material (12) on one surface of the support substrate, the method consisting in: a) forming a semiconductor layer (12) on a surface of a first substrate (10); b) forming a cleavage zone in the first substrate, delimiting a surface layer (18); c) bringing the first substrate (10), with the semiconductor material (12), on the support substrate (20); d) supplying power to cleave the first substrate along the cleavage line (16); e) eliminating said surface layer (16) to expose the semiconductor material layer (12).

    Abstract translation: 本发明涉及一种用于制造结构的方法，该结构包括在支撑基板的一个表面上的支撑基板（20）和半导体材料层（12），该方法包括：a）在表面上形成半导体层（12） 的第一衬底（10）; b）在第一衬底中形成切割区，限定表面层（18）; c）将带有半导体材料的第一衬底（10）带到支撑衬底（20）上; d）提供功率以沿着切割线（16）切割第一衬底; e）消除所述表面层（16）以露出半导体材料层（12）。

    METHOD OF LOW-TEMPERATURE TRANSFER FROM A LAYER OF SELF-ASSEMBLED MOLECULES
    10.
    发明申请
    METHOD OF LOW-TEMPERATURE TRANSFER FROM A LAYER OF SELF-ASSEMBLED MOLECULES 审中-公开
    从自组装分子的低温转移方法

    公开(公告)号：WO2009019266A3

    公开(公告)日：2009-05-22

    申请号：PCT/EP2008060262

    申请日：2008-08-05

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  BORDEL DAMIEN ,  DI CIOCCIO LEA ,  KOSTRZEWA MAREK

    Inventor： BORDEL DAMIEN ,  DI CIOCCIO LEA ,  KOSTRZEWA MAREK

    IPC: H01L21/762

    CPC classification number: H01L21/2007 ,  H01L21/187 ,  H01L21/76256 ,  H01L51/0024

    Abstract: The invention relates to a method of treating and/or transferring at least one part of an initial substrate, this method comprising: - a) the assembling of at least one initial substrate, and of a first support (6) using a layer (4) of self-assembled molecules, - b) a treatment of said initial substrate, and/or a transfer of at least one part of this initial substrate (2) to a second support (10), - c) an evacuation or an elimination of said layer (4) of self-assembled molecules in order to allow the removal of the first support (6).

    Abstract translation: 本发明涉及一种处理和/或转移初始基板的至少一部分的方法，该方法包括：a）使用层（4）装配至少一个初始基板和第一支撑件（6） ）的自组装分子， - b）所述初始基材的处理，和/或该初始基材（2）的至少一部分转移到第二载体（10）， - c）疏散或消除 （4）的自组装分子，以允许去除第一支撑物（6）。

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