公开(公告)号：US10803966B1

公开(公告)日：2020-10-13

申请号：US16512401

申请日：2019-07-16

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Hsih-Yang Chiu

IPC: G11C17/18 ,  H01L23/525 ,  G11C17/16 ,  G11C17/14

Abstract: A method of blowing an antifuse element is disclosed. An antifuse element including a first conductor, a second conductor, and a dielectric layer disposed between the first conductor and the second conductor is received, wherein the dielectric layer has a breakdown voltage. A first voltage is applied between the first conductor and the second conductor within a first time period, wherein the first voltage is less than the breakdown voltage. After applying the first voltage, a second voltage is applied between the first conductor and the second conductor to blow the antifuse element within a second time period, wherein the second voltage is greater than the breakdown voltage.

公开(公告)号：US10580744B1

公开(公告)日：2020-03-03

申请号：US16137250

申请日：2018-09-20

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Hsih-Yang Chiu

IPC: H01L23/52 ,  H01L23/58

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate, a die and a seal ring. The die is configured to be in and on the semiconductor substrate. The seal ring is configured to be on the semiconductor substrate and adjacent to the die. The seal ring forms an open loop.