公开(公告)号：JPH08255774A

公开(公告)日：1996-10-01

申请号：JP5754595

申请日：1995-03-16

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: B08B3/02 ,  B08B3/12 ,  B24B37/00 ,  B24B57/02 ,  H01L21/304 ,  H01L21/306

Abstract: PURPOSE: To provide a chemical-mechanical polishing method and chemical- mechanical polishing apparatus adaptive to flattening the stepped parts of interlayer insulation films produced during the production process of semiconductor devices, excellent in uniformity. CONSTITUTION: During a chemical-mechanical polishing step, a washing liq. is supplied from a nozzle 19 to wash the surface of a substrate 11. An ultrasonic wave apply means 20 may be attached to this nozzle. Thus, an old slurry on the surface of the substrate 11 is removed, including material removed by the polishing, and a new slurry an be supplied to enable the flattening independently of the step pattern of the substrate 11, without decreasing the polishing speed.

公开(公告)号：JPH08222630A

公开(公告)日：1996-08-30

申请号：JP4777595

申请日：1995-02-13

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/28 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE: To eliminate the problem of forming a recess due to overetching at the time of forming a metal plug and to improve the coverage of an upper layer wiring by flattening an interlayer insulating film by etching back a metal film on the insulating film, and then chemically mechanically polishing the upper surface of the insulating film. CONSTITUTION: An interlayer insulating film 102 is formed on a lower layer wiring layer 101, and an opening 103 communicating with the layer 101 is formed on the film 102. Then, a metal film 105 is formed on the entire surface of the film 102 including the opening 103, and the opening 103 is filled with the material of the film 105. Thereafter, the film 105 on the film 102 is removed except the metal in the opening by etching, and then the upper surface of the film 102 is chemically mechanically polished to flatten the surface. Subsequently, an upper layer wiring layer connected to the material of the film 105 in the opening 103 is formed on the film 102. For example, the film 105 made of tungsten is formed via a close contact layer 104.

公开(公告)号：JPH08153701A

公开(公告)日：1996-06-11

申请号：JP18342591

申请日：1991-06-28

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/302 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE: To provide a flattening method for a semiconductor substrate, which is useful for shortening super LSI manufacturing process and reducing cost, with no need for a protection film forming process, causing no damage on the semiconductor substrate. CONSTITUTION: On a semiconductor substrate 1 which has step protruding and recessed parts 2 and 3, an SiO2 film 4 is deposited for coating in a confarmal manner by a CVD method, and, conformal protruding part 2' of the SiO2 film 4 is selectively etched by optical excitation etching, so that the deposited SiO2 film 4 is fairly flattened, and then, the SiO2 film is added again by the CVD manner, so that, an almost flat interlayer insulation film 5 is obtained.

公开(公告)号：JPH0883790A

公开(公告)日：1996-03-26

申请号：JP4037195

申请日：1995-02-28

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C01B31/06 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE: To efficiently, accurately etch a diamond layer by implanting specific substance to a part to be desirably etched in advance to modify it to etch diamond, and then dry etching it. CONSTITUTION: A diamond semiconductor layer 102 is formed on a substrate 101, a diamond insulator film 103 is formed on the entire surface, and a mask layer 104 made of a photoresist film is pattern formed on the upper part. Then, oxygen is implanted into the film 103 not covered with the layer 104 by an ion implantation method to form a modified region 105. Thereafter, the layer 104 is removed by ashing. Then, it is maskless etched, and the modified region 105 of the layer 103 is removed. As a result, the non-modified part of the layer 103 is selectively etched, and the pattern of the layer 103 is formed.

公开(公告)号：JPH0878745A

公开(公告)日：1996-03-22

申请号：JP20695294

申请日：1994-08-31

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L39/24

Abstract: PURPOSE: To speedily perform the high speed anisotropic etching of Nb thin film, secure the selection ratio with a mask material, minimize dimension conversion difference, and manufacture a quantum wave element using the Nb thin film with an improved reliability. CONSTITUTION: A microwave plasma etching device with magnetic field is used, tetraethoxymethane gas is introduced into the microwave plasma etching device with magnetic field, and dry etching is performed to Nb thin film on a wafer 5 while applying ultrasonic wave to the wafer 5, thus performing patterning into a specific shape. The ultrasonic wave is applied by vibrating an ultrasonic vibrator 10 buried into a susceptor 6 for placing a wafer 4 with an ultrasonic oscillator 11.

公开(公告)号：JPH07335754A

公开(公告)日：1995-12-22

申请号：JP13062894

申请日：1994-06-13

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/316

Abstract: PURPOSE:To provide an annealing technique of SOG capable of further improv ing film quality. CONSTITUTION:The manufacture of a semiconductor device contains at least a process, in which a coating film 5 is formed onto a substrate 1 having stepped sections in a surface, the stepped sections are buried by rotating the substrate 1, the coating film 5 is thermally treated, and the insulating film 5, in which a surface is flattened, is formed. When the coating film 5 is thermally treated, it is thermally treated in a gas atmosphere containing an oxidizing agent and/or a gas atmosphere comprising a basic substance. It is favorable that a silicon oxide film 4 is shaped through plasma CVD as the foundation layer of the coating film 5 before the coating film 5 is formed.

公开(公告)号：JPH07335564A

公开(公告)日：1995-12-22

申请号：JP13062994

申请日：1994-06-13

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/768 ,  H01L21/205 ,  H01L21/316 ,  H01L23/522

Abstract: PURPOSE:To provide a waterproof film which is suited as the ground film of an interlayer insulation film and has an improved waterproofness from the ground film. CONSTITUTION:A process for forming a waterproof film 4 consisting of an insulation film is provided on a substrate 1 with a step on the surface and a process for forming at least one interlayer insulation film 5 is provided on the waterproof film 4 and the waterproof film 4 is formed by a reaction gas where base substance is added. Not only ammonium NH3 but also methylamine, ethylamine, isopropylamine, etc., are used as organic base for base substance. The waterproof film 4 should be formed by a reaction gas containing at least organic metal compound, an oxidizer, and base substance.

公开(公告)号：JPH07312356A

公开(公告)日：1995-11-28

申请号：JP10143794

申请日：1994-05-17

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: B24B41/06 ,  H01L21/304 ,  H01L21/306 ,  H01L21/677 ,  H01L21/68

Abstract: PURPOSE:To prevent mutual contamination between treatments by a method wherein a conveyance means is provided with a plurality of clamps which are used selectively according to the contamination degree of a substrate to be treated. CONSTITUTION:A head part 22 is installed at the free end of a conveyanc means 21, and three each of claws 23A, 23B, 23C as clamps which can sink into, and rise from, the rear surface of the head part 22 are installed at the peripheral edge part. The claws are arranged so as to be deviated by an angle of about 120 deg. each from the center of the head part 22, and three groups of one each of the claws 23A, 23B, 23C are arranged. Then, the claws 23A, 23B, 23C rise and sink selectively by a rising and sinking drive means. The operation of the claws is set in such a way that the claws 23A are used when a wafer 1 is conveyed to a polishing plate from, e.g. a loader-side stage, that the claws 23B are used when the polished wafer 1 on the polishing plate is conveyed to a rough removal plate and that the claws 23C are used when the roughly removed wafer 1 is conveyed to an unloader-side stage.

公开(公告)号：JPH07201834A

公开(公告)日：1995-08-04

申请号：JP35538793

申请日：1993-12-29

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213

Abstract: PURPOSE:To make it possible to form a silicon-based layer with a tapered shape adequately, along with good base selectivity and small particle contamination, by etching the silicon-based layer while a silicon bromide-based material is deposited in an etching region. CONSTITUTION:A gate insulating film 2 and a first-layer polysilicon layer 3 are formed on a silicon substrate 1, and a resist mask 4 with a given pattern is formed thereon. The wafer is set in a plasma etching apparatus using a microwave in a magnetic field, and the polysilicon layer 3 is etched using ECR plasma with an etching gas including a bromine-based gas and a rare gas. The etching is carried out while a side-face protective film 5 made of SiBrx- based reactive product is formed. Then, a gate electrode 3t with a tapered shape is formed. The wafer is carried to a chamber for the flowing process and subjected to a fluorine plasma process to remove the side-face protective film 5.

公开(公告)号：JPH07177761A

公开(公告)日：1995-07-14

申请号：JP31977993

申请日：1993-12-20

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H02N1/00 ,  B81B5/00 ,  B81C1/00

Abstract: PURPOSE:To improve the mechanical strength of the movable part of a micromachine, by forming at least a part of the movable part out of a carbon based inorganic material film. CONSTITUTION:A polysilicon electrode 2 and a sacrificial layer 3 which are provided on a substrate 1 are patterned in succession, and after the formation of an Al film, a rotor 4 is formed by the patterning of the Al film. Then, a patterning is so performed that only sacrificial layers 5, 3 which are present only in the region surrounding the rotor 4 are left. Subsequently, a film 6 made of amorphous carbon hydride is formed on the whole surface of the wafer, and thereon, the resist mask having the shapes of a hub 6a and a stator 6b is formed, and further, by the use of this resist mask, an etching is performed. Then, the sidewall protecting film thereof is removed by heating, and the resist mask is removed by an oxygen plasma processing. Thereby, on the inner and outer periphery sides of the rotor 4, the hub 6a and the stator 6b are formed respectively. Thereafter, when the sacrificial layers 3, 5 are removed by the dipping of the wafer into the solution of dilute hydrofloric acid, the rotor 4 is separated completely from its surrounded structure, and an electrostatic micromotor is completed.