4.
    发明专利
    未知

    公开(公告)号:DE69402024T2

    公开(公告)日:1997-10-02

    申请号:DE69402024

    申请日:1994-09-30

    Applicant: SONY CORP

    Inventor: SATO JUNICHI

    Abstract: In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type doping. In this method of diamond semiconductor manufacture, lithium atoms (which may be produced from a nitrogen compound of lithium, for instance lithium azide) is doped using ECR plasma into diamond (102) with the surface thereof having been cleaned, if necessary.

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