公开(公告)号：US09230812B2

公开(公告)日：2016-01-05

申请号：US13899577

申请日：2013-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chieh-Te Chen ,  Yu-Tsung Lai ,  Hsuan-Hsu Chen ,  Feng-Yi Chang

IPC: H01L21/311 ,  H01L21/28 ,  H01L21/768 ,  H01L21/033

CPC classification number: H01L21/28 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method for forming a semiconductor structure having an opening is provided. First, a substrate is provided, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region. A pattern density of the first region is substantially greater than that of the second region. Then, a material layer is formed on the substrate. A first hard mask and a second hard mask are formed on the material layer. The first hard mask in the first region is removed to form a patterned first hard mask. The second hard mask in the third region is removed to form a patterned second hard mask. Lastly, the material layer is patterned by using the patterned second hard mask layer as a mask to form at least an opening in the third region only.

Abstract translation: 提供一种形成具有开口的半导体结构的方法。 首先，提供衬底，其中在衬底上限定第一区域和第二区域，并且将第一区域和第二区域的重叠区域定义为第三区域。 第一区域的图案密度基本上大于第二区域的图案密度。 然后，在基板上形成材料层。 第一硬掩模和第二硬掩模形成在材料层上。 第一区域中的第一硬掩模被去除以形成图案化的第一硬掩模。 去除第三区域中的第二硬掩模以形成图案化的第二硬掩模。 最后，通过使用图案化的第二硬掩模层作为掩模来对材料层进行图案化，以仅在第三区域中形成至少一个开口。

公开(公告)号：US20150126015A1

公开(公告)日：2015-05-07

申请号：US14583122

申请日：2014-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chieh-Te Chen ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shui-Yen Lu ,  Li-Chiang Chen

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01L21/76897 ,  H01L27/0629 ,  H01L28/24 ,  H01L29/66545

Abstract: A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided.

Abstract translation: 半导体结构包括基板，抗蚀剂层，电介质材料，两个U形金属层和两种金属。 衬底具有隔离结构。 抗蚀剂层位于隔离结构上。 介电材料位于抗蚀剂层上。 两个U形金属层位于电介质材料的两侧和抗蚀剂层上。 两个金属分别位于两个U形金属层上。 以这种方式提供了用于形成所述半导体结构的半导体工艺。

公开(公告)号：US20140346575A1

公开(公告)日：2014-11-27

申请号：US13902975

申请日：2013-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chieh-Te Chen ,  Feng-Yi Chang ,  Hsuan-Hsu Chen

IPC: H01L21/283 ,  H01L21/311 ,  H01L29/417

CPC classification number: H01L29/41775 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/0692 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device with a self-aligned contact and a method of manufacturing the same, wherein the method comprises the step of forming a 1st dielectric layer on gate structures, form a self-aligned contact trench between two gate structures, forming an 2nd dielectric layer on the 1st dielectric layer and in the self-aligned contact trench; patterning the 2nd dielectric layer into a 1st portion on the 1st dielectric layer and a 2nd portion filling in the self-aligned contact trench, using the 2nd dielectric layer as a mask to etch the 1st dielectric layer, and forming a metal layer and a self-aligned contact simultaneously in the 1st dielectric layer and in the self-aligned contact trench.

Abstract translation: 具有自对准接触的半导体器件及其制造方法，其中所述方法包括在栅极结构上形成第一介电层的步骤，在两个栅极结构之间形成自对准接触沟槽，形成第二介电层 在第一电介质层和自对准接触沟槽中; 将第二电介质层图案化为第一介电层上的第一部分，并且使用第二介电层作为掩模来蚀刻第一介电层，并形成金属层和自身的第二部分填充在自对准接触沟槽中 在第一电介质层和自对准接触沟槽中同时进行。

公开(公告)号：US20140154852A1

公开(公告)日：2014-06-05

申请号：US13705183

申请日：2012-12-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chieh-Te Chen ,  Feng-Yi Chang ,  Chih-Sen Huang ,  Ching-Wen Hung ,  Ching-Pin Hsu

IPC: H01L29/66

CPC classification number: H01L21/76816 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a method for forming a semiconductor structure having a metal connect. A substrate is provided, and a transistor and a first ILD layer are formed thereon. A first contact plug is formed in the first ILD layer to electrically connect the source/drain region. A second ILD layer and a third ILD layer are formed on the first ILD layer. A first opening above the gate and a second opening above the first contact plug are formed, wherein a depth of the first contact plug is deeper than that of the second opening. Next, the first opening and the second opening are deepened. Lastly, a metal layer is filled into the first opening and the second opening to respectively form a first metal connect and a second metal connect.

Abstract translation: 本发明提供一种形成具有金属连接的半导体结构的方法。 提供衬底，并在其上形成晶体管和第一ILD层。 第一接触插塞形成在第一ILD层中以电连接源极/漏极区域。 在第一ILD层上形成第二ILD层和第三ILD层。 形成在栅极上方的第一开口和在第一接触插塞上方的第二开口，其中第一接触插塞的深度比第二开口的深度深。 接下来，加深第一开口和第二开口。 最后，将金属层填充到第一开口和第二开口中，以分别形成第一金属连接和第二金属连接。