Abstract:
A module includes a semiconductor chip having at least a first terminal contact surface and a second terminal contact surface. A first bond element made of a material on the basis of Cu is attached to the first terminal contact surface, and a second bond element is attached to the second terminal contact surface. The second bond element is made of a material different from the material of the first bond element or is made of a type of bond element different from the type of the first bond element.
Abstract:
A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 μm. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.
Abstract translation:功率半导体模块包括电路载体,该电路载体包括绝缘载体,该绝缘载体具有布置有金属化层的顶侧。 功率半导体芯片布置在金属化层的背离绝缘载体的一侧上,并且在功率半导体芯片的顶侧上背离电路载体,由铜或铜合金组成的上部芯片金属化层具有 大于或等于1μm的厚度。 由铜或铜合金构成的电连接导体在连接位置连接到上部芯片金属化。 灌封化合物从电路载体延伸到至少超过功率半导体芯片的顶侧,并且完全覆盖功率半导体芯片的顶侧,至少在连接位置的区域中包围连接导体,并具有穿透 根据DIN ISO 2137在25℃的温度下小于或等于30。
Abstract:
A manufacturing method for a composite alloy bonding wire and products thereof. A primary material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary material to obtain a Ag—Pd alloy solution. The obtained Ag—Pd alloy solution is drawn to obtain a Ag—Pd alloy wire. The Ag—Pd alloy wire is then drawn to obtain a Ag—Pd alloy bonding wire with a predetermined diameter.
Abstract:
A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.
Abstract:
A semiconductor chip or wafer comprises a passivation layer and a circuit line. The passivation layer comprises an inorganic layer. The circuit line is over and in touch with the inorganic layer of the passivation layer, wherein the circuit line comprises a first contact point connected to only one second contact point exposed by an opening in the passivation layer, and the positions of the first contact point and the only one second contact point from a top view are different, and the first contact point is used to be wirebonded thereto.
Abstract:
A fine wire made of an alloy of gold which contains 0.6 to 2 weight % of nickel, or an alloy of gold which contains 0.1 to 2 weight % of nickel, 0.0001 to 0.1 weight % of alkaline earth metal and/or rare earth metal, and optionally 0.1 to 1.0 weight % of platinum and/or palladium . The fine wire is distinguished by a favorable electrical conductivity and a good ratio of strength to elongation. The fine wire is suitable both for wire bonding of semiconductor devices and for producing the ball bumps of flip-chips.
Abstract:
One aspect relates to a cooler. The cooler has a cooler body, a cavity formed in the cooler body, and a bonding wire. The bonding wire is disposed inside the cavity and directly bonded to a first surface of the cooler body. The bonding wire includes at least 95 percent by weight aluminium; at least 0.25 percent by weight silicon; and at least one of: at least 0.05 percent by weight magnesium and at least 0.05 percent by weight manganese.
Abstract:
The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, comprising a copper core (2) with a surface and coating layer(3) superimposed over the surface of the copper core (2), wherein the coating layer (3) comprises aluminium, wherein the ratio of the thickness of the coating layer (3) to the diameter of the copper core (2) is in the range of from 0.05 to 0.2 µm, wherein the ratio of the standard deviation of the diameter of the copper core (2) to the diameter of the copper core (2) is in the range of from 0.005 to 0.05 µm and wherein the ratio of the standard deviation of the thickness of the coating layer (3) to the thickness of the coating layer (3) is in the range of from 0.05 to 0.4 µm, wherein the wire has a diameter in the range of from 100 µm to 600 µm. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge bonding.
Abstract:
Provided is a thin Au alloy bonding wire having desired strength, good bondability and stability over time, and improved circularity of a squashed ball and sphericity of a melted ball. The Au alloy bonding wire contains, in an Au alloy matrix containing 0.05 to 2 mass % in total of at least one selected from Pd and Pt of high purity in Au of high purity, as trace elements, 10 to 100 ppm by mass of Mg, 5 to 100 ppm by mass of Ce, and 5 to 100 ppm by mass of each of at least one selected from Be, Y, Gd, La, Eu and Si, the total content of Be, Y, Gd, La, Eu and Si being 5 to 100 ppm by mass, or as trace elements, Mg, Be, and at least one selected from Y, La, Eu and Si, or as trace elements, 10 to 100 ppm by mass of Mg, 5 to 30 ppm by mass of Si, 5 to 30 ppm by mass of Be, and 5 to 30 ppm by mass of at least one selected from Ca, Ce and Sn.
Abstract:
A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 °C to 600 °C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2 Accordingly, the resultant composite light-weighted plated wire can be improved in the adhesion between the aluminum conductor and the electrically conductive metal layer, easily shaped by plastic forming process, decreased in the diameter at higher efficiency, and improved in the reliability of soldering work.