MULTILAYER ELECTRODE STRUCTURE AND METHOD FOR FORMING
    101.
    发明公开
    MULTILAYER ELECTRODE STRUCTURE AND METHOD FOR FORMING 审中-公开
    多层电极结构和方法

    公开(公告)号:EP1297548A1

    公开(公告)日:2003-04-02

    申请号:EP01944257.3

    申请日:2001-05-31

    CPC classification number: H01J9/025 H01J9/148 H01J29/02

    Abstract: A first embodiment (Figs. 29A-29H) comprises a multilayer electrode (2906) for a panel display device and a mehod for forming a nultilayer electrode (2906) for a flat panel display device. The multilayer electrode (2096) is formed by depositing a metal alloy layer (2902). After the deposition of the metal alloy layer (2902), a protective layer (2904) is deposited above the metal alloy layer (2902) to form a multilayer stack (2906). The multilayer stack (2906) is subjected to a cleansing process to remove contaminants. Subsequently, the multilayer stack (2906) is etched to form the multilayer electrode (2906) for the flat panel display device. Another embodiment (Figs. 30-311) comprises a method of forming a multilayer stack (3106) is formed by depositing a first metal alloy layer (3102) above the substrate (3100). After the deposition of te metal alloy layer (3102), a barrier layer (3103) is formed above the first metal alloy layer (3102). The barrier layer (3103) is adapted to prevent the formation of an intermetallic compound within the first metal alloy layer (3102). Subsequently, a second metal alloy layer (3104) is deposited above the barrier layer (3103). The barrier layer (3103) prevents the formation of the intermetallic compound within the second metal alloy layer (3104).

    DISPLAY WITH ACTIVE CONTRAST ENHANCEMENT
    103.
    发明公开
    DISPLAY WITH ACTIVE CONTRAST ENHANCEMENT 审中-公开
    与ACTIVE相映成趣DISPLAY

    公开(公告)号:EP1177475A1

    公开(公告)日:2002-02-06

    申请号:EP00930339.7

    申请日:2000-05-03

    CPC classification number: G09G3/36 G02F1/1347 G09G2300/023 G09G2320/02

    Abstract: A display (50) with enhanced image contrast contains an image-producing component (60) and a set of shutter strips (80). The image-producing component, typically a flat-panel device, has multiple imaging lines that provide light to produce an image. Each shutter strip is situated in front of one or more associated imaging lines. By appropriately switching the shutter strips between light-absorptive and light-transmissive states, the image contrast is enhanced. The shutter strips are typically implemented with a liquid-crystal display structure. The switching of the shutter strips is typically performed with a control component (52/76) which utilizes light to control the shutter switching and which is synchronized to signals (90 or/and 100) that control the imaging lines.

    SYSTEM AND METHOD FOR FIELD EMISSION DISPLAYS
    104.
    发明公开
    SYSTEM AND METHOD FOR FIELD EMISSION DISPLAYS 审中-公开
    系统和方法场致发射显示器

    公开(公告)号:EP1114411A1

    公开(公告)日:2001-07-11

    申请号:EP99935552.2

    申请日:1999-07-14

    Abstract: A field emission display (700) having an improved operational life. In one embodiment, the field emission display (700) comprises a plurality of row lines (230), a plurality of column lines (250), and a plurality of electron emissive elements (40) disposed at intersections of the plurality of row lines (230) and column lines (250), a column driver circuit (740) and a row driver circuit (720). The column driver circuit (740) is coupled to drive column voltage signals over the plurality of column lines (250); and the row driver circuit (720) is coupled to activate and deactivate the plurality of row lines (230) with row voltage signals. According to the present invention, operation life of the field emission display is extended when the electron emissive elements are intermittently reverse-biased by the column voltage signals and the row voltage signals. In another embodiment, the row driver circuit is responsive to a SLEEP signal (770). The row driver circuit (720), upon receiving the SLEEP signal (770), drives a sleep-mode voltage over the row lines (230) to reverse-bias the electron emissive elements.

    PROTECTION OF SPINDT TYPE CATHODES DURING FABRICATION OF ELECTRON-EMITTING DEVICE
    108.
    发明公开
    PROTECTION OF SPINDT TYPE CATHODES DURING FABRICATION OF ELECTRON-EMITTING DEVICE 有权
    阴极Spindt型保护在制造的电子发射装置

    公开(公告)号:EP1036403A1

    公开(公告)日:2000-09-20

    申请号:EP98954016.6

    申请日:1998-10-27

    Inventor: KNALL, N., Johan

    CPC classification number: H01J9/025

    Abstract: In a partially finished electron-emitting device having electron-emissive elements (56A) formed at least partially with electrically non-insulating emitter material, electron-emissive element contamination that could result from passage of contaminant material through an excess layer (56B) of the emitter material is inhibited by forming a protective layer (58 or 70) over the excess emitter-material layer before performing additional processing operations on the electron-emitting device. Subsequent to these processing operations, material of the excess and protective layers overlying the electron-emissive elements is removed to expose the electron-emissive elements.

    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH
    109.
    发明公开
    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH 审中-公开
    材料的选择性去除采用自主发起的电偶活动在电解槽

    公开(公告)号:EP1032726A1

    公开(公告)日:2000-09-06

    申请号:EP98946862.4

    申请日:1998-09-21

    CPC classification number: H01J9/025

    Abstract: Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath (62). The characteristics of certain parts of the structure are chosen to have electrochemical reduction half-cell potentials that enable removal of the undesired material to be achieved in the bath without applying external potential to any part of the structure. The electrolytic bath (62) can be implemented with liquid that is inherently corrosive to, or inherently benign to, material of the chemical type being selectively removed.

    CLEANING OF ELECTRON-EMISSIVE ELEMENTS
    110.
    发明公开
    CLEANING OF ELECTRON-EMISSIVE ELEMENTS 有权
    清洗电子发射元件

    公开(公告)号:EP1021818A2

    公开(公告)日:2000-07-26

    申请号:EP98950613.4

    申请日:1998-09-22

    CPC classification number: H01J9/025

    Abstract: Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.

Patent Agency Ranking