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    Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element
    104.
    发明授权
    Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element 有权
    制造具有至少一个柱状或壁状半导体元件的半导体器件

    公开(公告)号：US09184235B2

    公开(公告)日：2015-11-10

    申请号：US14357583

    申请日：2012-11-09

    Applicant: Forschungsverbund Berlin e.V.

    Inventor： Oliver Brandt ,  Lutz Geelhaar ,  Vladimir Kaganer ,  Martin Woelz

    IPC: H01L21/00 ,  H01L29/06 ,  H01L27/15 ,  H01L31/109 ,  H01L29/12 ,  H01L33/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L31/0352 ,  H01L33/06

    CPC classification number: H01L29/122 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/035209 ,  H01L33/06 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.

    Abstract translation: 描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中 在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。 根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2） 第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。 还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。

    DEVICE HAVING AN ARRANGEMENT OF OPTICAL ELEMENTS
    105.
    发明申请
    DEVICE HAVING AN ARRANGEMENT OF OPTICAL ELEMENTS 有权
    具有光学元件布置的设备

    公开(公告)号：US20150219906A1

    公开(公告)日：2015-08-06

    申请号：US14427437

    申请日：2013-09-12

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Martin Maiwald ,  Bernd Sumpf

    IPC: G02B27/10 ,  G02B27/09

    CPC classification number: G02B27/1006 ,  G01J3/427 ,  G01J3/44 ,  G01J2003/4424 ,  G01N21/65 ,  G01N2021/399 ,  G01N2201/0221 ,  G01N2201/024 ,  G02B27/09 ,  G02B27/1086 ,  G02B27/141

    Abstract: The invention relates to a device (122) having an arrangement of optical elements comprising excitation light sources (101, 115) for generating individual light beams (102, 116) having different wavelengths for exciting a sample in such a way that light scattered back from the sample as a result of the excitation is made available to a Raman spectroscopic analysis. The device (122) comprises deflection devices (103, 117) associated with the individual light beams (102, 116) for deflecting the individual light beams (102, 116) onto a common light path, wherein the common light path comprises a same optical system (109) for focusing the light beams (102, 116).

    Abstract translation: 本发明涉及一种具有光学元件布置的装置（122），该装置包括用于产生具有不同波长的单个光束（102,116）的激发光源（102,116），用于激发样品，使得从 作为激发结果的样品可用于拉曼光谱分析。 装置（122）包括与单个光束（102,116）相关联的偏转装置（103,117），用于将各个光束（102,116）偏转到公共光路上，其中，公共光路包括相同的光 系统（109），用于聚焦光束（102,116）。

    DIODE LASER AND METHOD FOR MANUFACTURING A HIGH-EFFICIENCY DIODE LASER
    106.
    发明申请
    DIODE LASER AND METHOD FOR MANUFACTURING A HIGH-EFFICIENCY DIODE LASER 有权
    二极管激光器和制造高效二极管激光器的方法

    公开(公告)号：US20130128911A1

    公开(公告)日：2013-05-23

    申请号：US13682848

    申请日：2012-11-21

    Applicant: Forschungsverbund Berlin E.V.

    Inventor： Olaf BROX ,  Frank Bugge ,  Paul Crump ,  Goetz Erbert ,  Andre Maassdorf ,  Christoph M. Schultz ,  Hans Wenzel ,  Markus Weyers

    IPC: H01L33/10 ,  H01S5/187 ,  H01L33/00

    CPC classification number: H01L33/10 ,  H01L33/005 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/32316 ,  H01S2304/00

    Abstract: A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

    Abstract translation: 具有含铝层的二极管激光器和用于稳定发射波长的布拉格光栅实现了改进的输出/效率。 生长过程分为引入布拉格光栅的两个步骤，其中连续的无铝层和不含铝的掩模层在第一生长工艺之后连续沉积，使得含铝层被连续的铝完全覆盖 - 自由层。 在反应器外部进行结构化，而不含有铝氧化半导体层。 随后，在反应器内进一步蚀刻预构造的半导体表面，并将构造施加到含铝层中。 在这个过程中，在光栅的环境中少量的氧被插入到含铝层的半导体晶体中，与不产生光栅层的二极管激光器相比，二极管激光器的输出和效率没有降低 外延步骤

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