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101.发明专利Sensor device with circuit for detecting single or multiple events and generating corresponding interrupt signal 有权具有用于检测单个或多个事件和产生相应中断信号的电路的传感器设备
公开(公告)号：JP2008217760A
公开(公告)日：2008-09-18
申请号：JP2007312878
申请日：2007-12-03
Inventor： ROSELLI GIUDITTA , TRONCONI MICHELE , PASOLINI FABIO
IPC: G06F3/038
CPC classification number: G01P15/125 , G01P13/00 , G01P15/0802 , G06F1/1613 , G06F1/1684 , G06F3/017 , G06F3/0383 , G06F13/24 , G06F2200/1636 , G06F2200/1637
Abstract: PROBLEM TO BE SOLVED: To avoid a fall of performance and degradation of agility in event identification.
SOLUTION: This sensor device is provided with a sensing mechanism for generating a first detection signal A
x , and a dedicated integrated circuit 6 connected to the sensing mechanism to detect a first event related to an electronic device according to the first detection signal A
x and generating a first interrupt signal when detecting the first event. The dedicated integrated circuit 6 detects the first event as a function of a temporal evolution of the first detection signal A
x , and in particular as a function of values assumed by the first detection signal A
x within one or more successive time windows T
S1 -T
S3 and of a relationship between these values.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：避免事件识别中的性能下降和敏捷性下降。
解决方案：该传感器装置设置有用于产生第一检测信号A
x 的感测机构和连接到感测机构的专用集成电路6，以检测与电子 设备根据第一检测信号A x ，并且当检测到第一事件时产生第一中断信号。 专用集成电路6根据第一检测信号A x 的时间演变来检测第一事件，特别是根据第一检测信号A x 在一个或多个连续时间窗口T S1 S3 中的这些值之间的关系。 版权所有（C）2008，JPO＆INPIT -
公开(公告)号：JP2008182191A
公开(公告)日：2008-08-07
申请号：JP2007285476
申请日：2007-11-01
Inventor： CASCIO ALESSANDRA , CURRO GIUSEPPE
IPC: H01L29/78 , H01L29/739
CPC classification number: H01L29/42368 , H01L29/0878 , H01L29/66712 , H01L29/7802
Abstract: PROBLEM TO BE SOLVED: To provide a MOS device resistant to ionizing radiation.
SOLUTION: A MOS device resistant to ionizing-radiation has a surface semiconductor layer 3 having a first type of conductivity, a gate structure 8 formed above the surface semiconductor layer 3 and constituted by a dielectric gate region 9 and a gate electrode region 11 located on the dielectric gate region 9, and a plurality of body regions 6 which is formed laterally and partially under the gate structure 8 within the surface semiconductor layer 3, and each of which has a second type of conductivity. In particular, the dielectric gate region 9 has a central region 9b having a first thickness, and a plurality of side regions 9a having a second thickness thinner than the first thickness. The central region 9b is located on an intercell region 10 of the surface semiconductor layer 3 arranged between the plurality of body regions 6.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供耐电离辐射的MOS器件。 解决方案：耐电离辐射的MOS器件具有具有第一类导电性的表面半导体层3，形成在表面半导体层3上方并由电介质栅极区9和栅电极区域构成的栅极结构8 11，以及形成在表面半导体层3内的栅极结构8的横向且部分地形成的多个体区6，并且各自具有第二导电性。 特别地，电介质栅极区9具有具有第一厚度的中心区域9b和具有比第一厚度薄的第二厚度的多个侧面区域9a。 中心区域9b位于布置在多个主体区域6之间的表面半导体层3的单元间区域10.版权所有（C）2008，JPO＆INPIT
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103.发明专利
公开(公告)号：JP3974680B2
公开(公告)日：2007-09-12
申请号：JP6617297
申请日：1997-03-19
Inventor： ヴィーラ コラード , タッサン カサー ファヴィオ , デーラボーラ マルコ
CPC classification number: G11C29/82
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公开(公告)号：JP3962876B2
公开(公告)日：2007-08-22
申请号：JP2667197
申请日：1997-02-10
Inventor： マンクーソ マッシモ , アルベルト マルケス ペレイラ リカルド , ポルッツィ リナルド
CPC classification number: H04N7/012 , H04N7/0132
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公开(公告)号：JP2004357277A
公开(公告)日：2004-12-16
申请号：JP2004105994
申请日：2004-03-31
Applicant: Stmicroelectronics Sa , Stmicroelectronics Srl , エスティーマイクロエレクトロニクスエス.アール.エル.STMicroelectronics S.r.l. , エスティマイクロエレクトロニクス・ソシエテ・アノニムSTMicroelectronics S.A.
Inventor： MESSINA GIUSEPPE , BATTIATO SEBASTIANO , CASTORINA ALFIO , PLAZA LAURENT
CPC classification number: G06T5/007 , G06K9/00234 , G06T5/40 , H04N1/6027
Abstract: PROBLEM TO BE SOLVED: To provide an image processing method which overcomes a stationary restriction having an adverse effect upon conventional techniques.
SOLUTION: Firstly, the color information of an image relating to an examinee is extracted by an image extracting apparatus. A visually associated region is then detected. The gray scale of the extracted image is then normalized on the basis of the visually associated region to correct the exposure of the extracted image. A region corresponding to the skin of the photographed examinee is also identified, and the region is used as a visually concerned region in a step of exposure correction.
COPYRIGHT: (C)2005,JPO&NCIPI-
Patent Agency Ranking
公开(公告)号：JP2004264281A
公开(公告)日：2004-09-24
申请号：JP2003307627
申请日：2003-08-29
Applicant: Nokia Corp , Stmicroelectronics Srl , エスティーマイクロエレクトロニクスエス.アール.エルSTMicroelectronics S.r.l. , ノキア コーポレイションNokia Corporation
Inventor： ZERBINI SARAH , MERASSI ANGELO , SPINOLA DURANTE GUIDO , DE MASI BIAGIO
CPC classification number: G01P1/127 , G01P15/06 , G01P15/0802 , G01P15/0891 , G01P15/18 , G01P2015/0814 , H01H1/0036 , H01H35/146
Abstract: PROBLEM TO BE SOLVED: To provide an inertial sensor having failure threshold.
SOLUTION: The inertial sensor having failure threshold is provided with a first body 2 and a second body 18, which can move relatively with respect to one another and are constrained by a plurality of elastic elements, and at least one sample element 6, connected between the first body 2 and the second body 18 and shaped so as to be subjected to a stress, when the second body 18 goes outside of the relative resting position with respect to the first body 2. The sample element 6 has at least one weakened region 9, 10.
COPYRIGHT: (C)2004,JPO&NCIPIAbstract translation: 要解决的问题：提供具有故障阈值的惯性传感器。 解决方案：具有故障阈值的惯性传感器设置有第一主体2和第二主体18，第一主体2和第二主体18可相对于彼此相对运动并且被多个弹性元件约束，并且至少一个样本元件6 连接在第一主体2和第二主体18之间并且当第二主体18相对于第一主体2移动到相对静止位置之外时被成形为受到应力。样本元件6至少具有 一个弱化区域9,10。（C）2004，JPO＆NCIPI
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公开(公告)号：JP5498861B2
公开(公告)日：2014-05-21
申请号：JP2010126881
申请日：2010-06-02
Inventor： プランディ ルチアーノ , カミナダ カルロ
IPC: G01C19/5776 , B81B3/00 , G01C19/56
CPC classification number: G01C19/56 , G01C19/5726 , G01C19/5762 , H03F3/70
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公开(公告)号：JP5400708B2
公开(公告)日：2014-01-29
申请号：JP2010121681
申请日：2010-05-27
Inventor： 浩一 石本 , 佳孝 多田羅 , 伸 犬塚 , コンティ セバスチアーノ
CPC classification number: H04R19/005 , H04R19/04 , H04R2410/03
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公开(公告)号：JP5319891B2
公开(公告)日：2013-10-16
申请号：JP2007060949
申请日：2007-03-09
Inventor： スピノラ ダランテ グイド , バルゼッリ ルドヴィコ アレッサンドロ , ゼービニ サラ
IPC: G01C19/5712 , G01C19/56
CPC classification number: G01C19/5712
Abstract: A driving mass (3) of an integrated microelectromechanical structure (1) is moved with a rotary motion about an axis of rotation (z), and a first sensing mass (16a) is connected to the driving mass (3) via elastic supporting elements (20) so as to perform a first detection movement in the presence or a first external stress. The driving mass (3) is anchored to an anchorage (7) arranged along the axis of rotation by elastic anchorage elements (8); an opening (9a) is provided within the driving mass, and the first sensing mass (16a) is arranged within the opening. The elastic supporting and anchorage elements render the first sensing mass (16a) fixed to the driving mass (3) in the rotary driving motion, and substantially decoupled from the driving mass in the detection movement.
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公开(公告)号：JP5214984B2
公开(公告)日：2013-06-19
申请号：JP2008010978
申请日：2008-01-21
Inventor： アントーニオ メラッシ アンジェロ , ゼルビーニ サラ , シモーニ バーバラ
IPC: G01P15/125 , H01L29/84
CPC classification number: B81B3/0051 , B81B2201/0235 , G01P15/0802 , G01P2015/0831
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