SPLIT-GATE FIELD EFFECT TRANSISTOR
    101.
    发明申请
    SPLIT-GATE FIELD EFFECT TRANSISTOR 审中-公开
    分离栅场效应晶体管

    公开(公告)号:WO1990007795A1

    公开(公告)日:1990-07-12

    申请号:PCT/US1989005861

    申请日:1989-12-29

    CPC classification number: H01L29/42316 H01L29/1029 H01L29/7787 H01L29/8124

    Abstract: A field effect transistor (28) having a gate voltage swing in the transistor channel (40) varying as a function of position between the drain (32) and the source (30). The gate voltage swing in the transistor channel (40) may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device (48) may be used by applying a voltage between the gates (70, 72). In both cases, the electric field near the source (50, 30) is raised to accelerate the electrons thereby decreasing electron transit time.

    SPECTROSCOPY METHODS
    102.
    发明申请
    SPECTROSCOPY METHODS 审中-公开
    光谱法

    公开(公告)号:WO1989012834A1

    公开(公告)日:1989-12-28

    申请号:PCT/US1989002642

    申请日:1989-06-16

    CPC classification number: G01R33/446

    Abstract: Several magnetic resonance imaging (MRI) methods using adiabatic excitation are disclosed. One method accomplishes slice selection with gradient modulated adiabatic excitation. Another method employs slice selection with adiabatic excitation despite large variations in B1 magnitude. There is also described H spectroscopy using solvent suppressive adiabatic pulses.

    Abstract translation: 公开了使用绝热激发的几种磁共振成像(MRI)方法。 一种方法通过梯度调制绝热激发实现切片选择。 另一种方法采用具有绝热激发的切片选择,尽管B1幅度有很大变化。 还使用溶剂抑制绝热脉冲描述了1 H光谱。

    NOVEL HIGH-SPEED INTEGRATED HETEROSTRUCTURE TRANSISTORS, PHOTODETECTORS, AND OPTOELECTRONIC CIRCUITS
    103.
    发明申请
    NOVEL HIGH-SPEED INTEGRATED HETEROSTRUCTURE TRANSISTORS, PHOTODETECTORS, AND OPTOELECTRONIC CIRCUITS 审中-公开
    新型高速集成结构晶体管,光电转换器和光电电路

    公开(公告)号:WO1989012323A1

    公开(公告)日:1989-12-14

    申请号:PCT/US1989002401

    申请日:1989-06-01

    Abstract: A high-speed heterostructure planar integrated circuit includes a planar photodetector (30) together with a transistor (either a Modulation-Doped-0 Field Effect Transistor 50 or a lateral p-n-p bipolar transistor 120). The planar photodetector (30) includes a bottom confinement layer (12) of a wide bandgap material, a heavily doped first conductivity-type buried layer (14) over the bottom confinement layer, a relatively undoped higher index of refraction layer (16) overlying the buried layer (14), a top confinement layer (18) of wider bandgap material which has a lower index of refraction, a first vertical contact region (32) of first conductivity type which extends downward to make electrical contact with the buried layer, and a second contact region (34) of second conductivity type spaced laterally from the first contact region (32) and extending through the top confinement layer (18) and a portion of the undoped layer (16). As a result of the difference in refractive indices of undoped versus doped regions and in wide gap versus narrow gap material, light directed into one end of the photodetector (30) is confined both laterally and vertically to the undoped layer (16) where it is absorbed. Charge separation occurs with first conductivity carriers being collected at the first contact region (32) and the buried layer (14), and second conductivity carriers being collected at the second contact region.

    HYPER-IMMUNE GLOBULIN AGAINST HIV
    105.
    发明申请
    HYPER-IMMUNE GLOBULIN AGAINST HIV 审中-公开
    超免疫球蛋白抗HIV

    公开(公告)号:WO1989001339A1

    公开(公告)日:1989-02-23

    申请号:PCT/US1988002768

    申请日:1988-08-10

    CPC classification number: C07K16/1054 A61K38/00

    Abstract: An immunoglobulin (IgG) which is useful for the prophylactic or therapeutic treatment of humans who have been exposed to HIV is produced by a process comprising: a) identifying a human donor who is clinically healthy and whose plasma: i) exhibits an anti-HIV p24 antibody titer of at least about 128; ii) is HIV p24 negative by enzyme immunoassay; iii) is HIV-culture negative; and b) isolating a sample of immunoglobulin from the blood of said donor having an HIV neutralizing titer of at least about 8000 at a concentration of about 5 % by weight of immunoglobulin.

    Abstract translation: 可用于预防或治疗已经暴露于HIV的人的免疫球蛋白(IgG)通过以下方法产生,所述方法包括:a)鉴定临床健康的人类供体,其血浆:i)显示抗HIV p24抗体滴度至少约为128; ii)通过酶免疫测定为HIV p24阴性; iii)是艾滋病毒文化阴性; 和b)以约5重量%的免疫球蛋白的浓度从具有至少约8000的HIV中和滴度的所述供体的血液中分离免疫球蛋白样品。

    MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED CIRCUIT
    108.
    发明申请
    MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED CIRCUIT 审中-公开
    单晶三维集成电路

    公开(公告)号:WO1988001829A2

    公开(公告)日:1988-03-24

    申请号:PCT/US1987001095

    申请日:1987-05-08

    Abstract: A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.

    Abstract translation: 包含3-D掺杂图案的单晶整体形成不同的器件和被隔离的电路。 半导体整体包括互连信号路径和电源总线,也是结隔离的,通常具有P个矩阵区域内的N +区域,以及隧道结,N + -P +结,作为从N型到P型区域的欧姆接触。 隔离箱包括正交隔离器。 3-D结构使关键轮廓的层与生长轴垂直。 正交隔离器可以包括浮动元件。 可以通过在封闭系统中的连续或准连续处理(例如通过MBE或溅射外延)来制造3-D半导体整体。 此外,可以提供薄层的硅化物作为欧姆接触,和/或可以提供厚的硅化物层作为导体,从而提供单晶3-D器件或集成电路。 最后,可以围绕整个设备提供绝缘体以进行隔离。

    APPRATUS AND METHOD FOR RAPID INFUSION OF CIRCULATORY SUPPORTIVE FLUIDS
    110.
    发明申请
    APPRATUS AND METHOD FOR RAPID INFUSION OF CIRCULATORY SUPPORTIVE FLUIDS 审中-公开
    快速灌注循环支持流体的方法和方法

    公开(公告)号:WO1987001946A1

    公开(公告)日:1987-04-09

    申请号:PCT/US1986002044

    申请日:1986-09-29

    CPC classification number: A61M5/44 A61M2205/366

    Abstract: An apparatus and method for the rapid infusion of circulatory supportive fluid or blood. The apparatus includes an enclosed housing (10) for retaining the fluid prior to infusion, means for warming the fluid (30), means for circulating the fluid within the housing (50), means for inhibiting cellular damage of the fluid (65), means for permitting oxygenation of the fluid (70), and means for transfusing the fluid to the patient (78). The method includes the steps of providing an apparatus as described above, supplying it with circulatory supportive fluid or blood, warming the blood, and infusing it into a patient's vein at a rate of up to 3,000 or more ml. per minute.

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