Abstract:
A field effect transistor (28) having a gate voltage swing in the transistor channel (40) varying as a function of position between the drain (32) and the source (30). The gate voltage swing in the transistor channel (40) may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device (48) may be used by applying a voltage between the gates (70, 72). In both cases, the electric field near the source (50, 30) is raised to accelerate the electrons thereby decreasing electron transit time.
Abstract:
Several magnetic resonance imaging (MRI) methods using adiabatic excitation are disclosed. One method accomplishes slice selection with gradient modulated adiabatic excitation. Another method employs slice selection with adiabatic excitation despite large variations in B1 magnitude. There is also described H spectroscopy using solvent suppressive adiabatic pulses.
Abstract:
A high-speed heterostructure planar integrated circuit includes a planar photodetector (30) together with a transistor (either a Modulation-Doped-0 Field Effect Transistor 50 or a lateral p-n-p bipolar transistor 120). The planar photodetector (30) includes a bottom confinement layer (12) of a wide bandgap material, a heavily doped first conductivity-type buried layer (14) over the bottom confinement layer, a relatively undoped higher index of refraction layer (16) overlying the buried layer (14), a top confinement layer (18) of wider bandgap material which has a lower index of refraction, a first vertical contact region (32) of first conductivity type which extends downward to make electrical contact with the buried layer, and a second contact region (34) of second conductivity type spaced laterally from the first contact region (32) and extending through the top confinement layer (18) and a portion of the undoped layer (16). As a result of the difference in refractive indices of undoped versus doped regions and in wide gap versus narrow gap material, light directed into one end of the photodetector (30) is confined both laterally and vertically to the undoped layer (16) where it is absorbed. Charge separation occurs with first conductivity carriers being collected at the first contact region (32) and the buried layer (14), and second conductivity carriers being collected at the second contact region.
Abstract:
A process for inhibiting oxidative darkening of foods by treating the food with a protease effective to inhibit oxidative darkening of the food. A composition for inhibiting oxidative darkening and a kit for preparing the composition.
Abstract:
An immunoglobulin (IgG) which is useful for the prophylactic or therapeutic treatment of humans who have been exposed to HIV is produced by a process comprising: a) identifying a human donor who is clinically healthy and whose plasma: i) exhibits an anti-HIV p24 antibody titer of at least about 128; ii) is HIV p24 negative by enzyme immunoassay; iii) is HIV-culture negative; and b) isolating a sample of immunoglobulin from the blood of said donor having an HIV neutralizing titer of at least about 8000 at a concentration of about 5 % by weight of immunoglobulin.
Abstract:
A method for forming metal nitride films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor (8) comprising a dialkyl(Group III metal) azide, so as to deposit a film (9) of the corresponding metal nitride on the surface of a substrate (6).
Abstract:
A flow visualization system (10) usable for clean rooms to determine the flow conditions that exist during manufacture, includes a non-contaminating source (14) of a visible stream of a fog comprising water droplets which evaporate and leave no residue. Steam is generated in a boiler (11) and is passed over an interface with a cryogenic material (15) to form a high density fog generator providing a highly visible fog that is neutrally buoyant and non-contaminating.
Abstract:
A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.
Abstract:
Polypeptides which inhibit the binding of the C5a chemotaxin to polymorphonuclear leukocytes by cleaving a six amino acid peptide from the carboxy-terminus of the C5a chemotaxin. The polypeptides can be isolated from virulent strains of group A streptococci, s. pyogenes, by enzymatic or detergent extraction.
Abstract:
An apparatus and method for the rapid infusion of circulatory supportive fluid or blood. The apparatus includes an enclosed housing (10) for retaining the fluid prior to infusion, means for warming the fluid (30), means for circulating the fluid within the housing (50), means for inhibiting cellular damage of the fluid (65), means for permitting oxygenation of the fluid (70), and means for transfusing the fluid to the patient (78). The method includes the steps of providing an apparatus as described above, supplying it with circulatory supportive fluid or blood, warming the blood, and infusing it into a patient's vein at a rate of up to 3,000 or more ml. per minute.