公开(公告)号：JPH1092804A

公开(公告)日：1998-04-10

申请号：JP24755696

申请日：1996-09-19

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To stably form a structure having minute air bubbles (cavities) in an organic film, and form a porous dielectric film (permittivity is about 1.2-1.8) whose permittivity is lower than a so-called conventional low permittivity film. SOLUTION: In this method, firstly fluorocarbon resin solvent in solvent is spread on a substrate 11, and a film (organic film 15) is formed. Secondly, the organic film 15 is heat-treated in the following atmosphere, and a porous dielectric film 17 is manufactured; at a temperature higher than the glass transition temperature of fluorocarbon resin and lower than its thermal decomposition temperature, and at a pressure lower than the saturated vapor pressure of the solvent. As the fluorocarbon resin, mixture composed of polytetrafluoroethylene and paradioxole is used.

公开(公告)号：JPH09199490A

公开(公告)日：1997-07-31

申请号：JP702996

申请日：1996-01-19

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To form an inorganic insulating film on an organic insulating film while preventing cracks and decomposition of the organic insulating film, and form the inorganic film on any organic insulating film by thermal CVD method. SOLUTION: A first inorganic insulating film 3 is formed on an organic insulating film 2 formed on a base 1 by thermal CVD which performs chemical reaction with heat energy, then, a second inorganic insulating film 4 is formed on the first inorganic insulating film 3 by plasma CVD. The thermal CVD is performed by using the material gas which contains at least silane gas and oxidizing gas within a temperature range of -50 to 400 deg.C. Prior to the formation of the first inorganic insulating film 2, inorganic gas plasma is applied to the organic insulating film 2 formed on the base 1 or alcohol solvent is applied on the surface of the organic insulating film 2.

公开(公告)号：JPH09115898A

公开(公告)日：1997-05-02

申请号：JP27383895

申请日：1995-10-23

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To prevent the release of a gas, noxious to the manufacture of a semiconductor device, from a material having not yet been reacted. SOLUTION: When a dielectric film, whose main component being polyparaxylylene, is formed on a substrate 1 by chemical vapor growth, the substrate 1 is held at a predetermined temperature in a range not lower than 100 deg.C and not higher than 300 deg.C, and a polyparaxylylene film 16 is formed to be a dielectric film. Further, after the polyparaxylylene film 16 is formed on the substrate 1 by chemical vapor growth, that substrate 1 is annealed at a predetermined temperature in a range not lower than 150 deg.C and not higher than 300 deg.C.

公开(公告)号：JPH098031A

公开(公告)日：1997-01-10

申请号：JP15758795

申请日：1995-06-23

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/316 ,  H01L23/522

Abstract: PURPOSE: To form a so-called low dielectric coefficient film having high embedding ability and a low dielectric coefficient by using material gas including at least methylfluorosilane and water or methylfluorosilane and hydrogen peroxide. CONSTITUTION: Material gas to be used for chemical vapor phase epitaxy should include at least methylfluorosilane and water or methylfluorosilane and hydrogen peroxide. For example, a plurality of interconnections 12 are formed on a substrate 11, and then a protection film 13 is formed by means of plasma CVD to cover the respective interconnections 12. Then material gas being a mixture of Si (CH3 )2 F2 , Si (CH3 ) F3 and H2 O is introduced to a low pressure CVD apparatus to form an insulation film 14 of silicon oxide on the protection film 13. Then after a silicon oxide film is formed by means of CVD as another insulation film 15 on an upper face of the insulation film 14, annealing is performed to remove moisture in the insulation film 14.

公开(公告)号：JPH08227888A

公开(公告)日：1996-09-03

申请号：JP3196095

申请日：1995-02-21

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/40 ,  C23C16/50 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE: To obtain a dielectric film which is enhanced in filling performance and lessened in dielectric constant by a method wherein material gas used in a chemical vapor growth process where dielectric film is formed is composed of silane gas such as monosilane or polysilaxae, specific hydrocarbon, and oxidizing agent of oxygen atom-containing gas. CONSTITUTION: A wiring 13 is formed on a semiconductor board 11 through the intermediary of an insulating film 12, and a protective film 14 is formed on the surface of the wiring 13. Then, a dielectric film 15 of low dielectric constant is formed on the protective film 14. The dielectric film 15 is formed through a vacuum CVD device 201, and material gas is introduced into the reaction chamber 211 of the vacuum CVD device 201 through the intermediary of gas inlet sections 212 and 213 and a diffusion section 216. The material gas is composed of silane gas such as monosilane or polysilane, specific hydrocarbon represented by a formula, Cn H2n+2 (n denote positive integer), and oxidizing agent of oxygen atom-containing gas. By this setup, the dielectric film 15 which has a high filling performance and a low dielectric constant is capable of being realized.

公开(公告)号：JPH08167650A

公开(公告)日：1996-06-25

申请号：JP31013694

申请日：1994-12-14

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/318 ,  H01L23/522

Abstract: PURPOSE: To improve waterproof property of an insulation film wherein a low dielectric constant material is used and to correspond to 0.25μm process. CONSTITUTION: An insulation film structure coats a conductive layer 12 provided on a substrate 11, and is composed of a protection film 13 consisting of silicon oxide containing hydrogen atom of 20Z (zeta) atom/cm or more and 100Zatom/ cm or less and a low dielectric layer 14 filling a step 12A by a conductive layer 12 and coating the protection film 13. The protection film 13 is formed 10nm thick or more and 100nm thick or less. A nitride layer whose film thickness is 1.0nm or more and 2.0nm or less can be further formed in a surface layer of the protection film 13.

公开(公告)号：JPH07307292A

公开(公告)日：1995-11-21

申请号：JP9731294

申请日：1994-05-11

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C14/34 ,  C23F4/00 ,  H01L21/205

Abstract: PURPOSE:To improve uniformity between wafers/in wafer surfaces of film thick ness and impurity concentration even in a dilute doping region at the time of batch low pressure CVD. CONSTITUTION:A low pressure CVD device 100, in which an inner tube 9 is mounted into a silica tube 1, is used, the inside of the tube is supplied with a PH3/SiH4/N2 gases before film formation, and Si thin-films containing phosphorus (P) are deposited on the surfaces of the silica tube 1 and the inner tube 9 (pre-doping). The insides of the tubes are supplied with the SiH4/N2 gases, and polysilicon thin-films are grown on wafers W while phosphorus discharged from tube walls is taken into the films. Or the upper sections of the wafers W are fed uniformly with the dilute PH3 gas by using another decompression CVD device capable of forming gas flows in the tubes in parallel with the main surfaces of the wafers W, and impurity concentration is equalized without pre-doping. Accordingly, gate electrodes in low impurity concentration corresponding to a change into thin-films of gate insulating films can be formed.

公开(公告)号：JPH07249584A

公开(公告)日：1995-09-26

申请号：JP3997394

申请日：1994-03-10

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C30B29/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205

Abstract: PURPOSE:To provide a chemical vapor growth device and film formation method with less amount of generated particles and a high productivity which are especially suited for the case when film formation gas contains a silane compound. CONSTITUTION:The chemical vapor growth device for forming a film with a specific thin film on the surface of a substrate 5 using a film formation gas introduced into a reaction chamber 1 for housing the substrate 5 is provided with a piping 6 for supplying purge gas with an opening near a substrate carry- out entrance 1d of a reaction chamber 1. At this time, the chemical vapor growth device may be provided with a purge gas heating mechanism for heating purge gas or a heating mechanism for heating before introducing the film formation gas into the reaction chamber 1. At this time, the film formation gas may contain a feed gas and a dilute gas for giving the constituents of a thin film and the heating mechanism may heat the dilution gas or a load lock chamber 3 may be provided with at least either of a heater for heating the substrate 5 or a piping for supplying heated purge gas for supplying the heated purge gas.

公开(公告)号：JPH07245268A

公开(公告)日：1995-09-19

申请号：JP3453394

申请日：1994-03-04

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/52 ,  H01L21/205 ,  H01L21/318

Abstract: PURPOSE:To prevent an abnormal growth by introducing silane gas into a CVD device where a load lock chamber is connected to the front stage of a reaction oven and then forming a ground film with a small substrate surface dependency at the initial stage of film formation when forming a desired thin film on a substrate in the reaction oven. CONSTITUTION:When forming a film by an LPCVD device, the inside of a load rock chamber 2 is evacuated and the inside of the reaction oven 1 is heated to a desired temperature by a heater 6 and at the same time air is exhausted by an exhaust port 7, thus reducing pressure to a desired value. Then, a wafer port 4 is moved by a transport mechanism, a wafer 3 is carried from the load lock chamber 2 to the reaction oven 1, and then a feed gas is introduced from a gas supply pipe 5, and then SIN thin film is formed in the wafer 3. In this case, after SION thin film is formed as a ground film on the S1 substrate, the SiN thin film is formed, thus suppressing an abnormal growth and improving film quality.

公开(公告)号：JPH07240410A

公开(公告)日：1995-09-12

申请号：JP5524194

申请日：1994-02-28

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/31 ,  H01L21/318

Abstract: PURPOSE:To make possible the formation of a very thin and high quality silicon nitride film having a high capacitance on a base material by the method which does not require the heat treatment such as RTN processing unlike the conventional method to form a silicon nitride film and does not result in increase of manufacturing steps of semiconductor device. CONSTITUTION:After removing a naturally oxidized film at the surface of a base material with an oxide film removing apparatus, the base material is carried into a load lock chamber of a silicon nitride film forming apparatus having a load lock chamber and a film forming chamber, after inside of the load lock chamber is filled with an inactive gas under the reduced pressure condition, the base material is transferred into the film forming chamber from the load lock chamber to form a silicon nitride film on the surface of the base material.