公开(公告)号：JP2002246186A

公开(公告)日：2002-08-30

申请号：JP2001046438

申请日：2001-02-22

Applicant: SONY CORP

Inventor： KAWASHIMA TOSHITAKA ,  KOBAYASHI MASATO

IPC: H05B33/26 ,  H01L51/50 ,  H05B33/08 ,  H05B33/14 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide an organic EL element having a control function for injection current and the like. SOLUTION: In this organic EL element 30, an anode electrode 34 constructed of an n-type transparent electrode film, a cathode electrode 36, and an organic multilayer film, consisting of an organic hole transporting layer 38 and an organic electron transport layer 40 sequentially arranged between the anode electrode and the cathode electrode, are arranged on a transparent base board 32. In the anode electrode, both end parts which do not face the base board and the organic hole transport layer are put between first and second p-type layers 44A and 44B, electrically insulated from the organic multilayer film and the cathode electrode by an insulating layer 42. When electric current flows through a path, constructed of the p-type layer 44A, the n-type anode electrode 34, and the p-type layer 44B, an amount of hole supplied in light emission can be controlled, so that electric current injected to an organic light- emitting layer 40 can be controlled. In this way, wasteful current injection to the organic EL element is prevented, and a light output-current characteristic is increased, and luminous efficiency is improved.

公开(公告)号：JP2000323567A

公开(公告)日：2000-11-24

申请号：JP12604899

申请日：1999-05-06

Applicant: SONY CORP

Inventor： KAKINUMA MASAYASU ,  KAWASHIMA TOSHITAKA ,  ISHIKAWA HIROKAZU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide an electrode formation method which can surely connect a functional film requiring conductivity with an external conductive member, and a functional film obtained thereby. SOLUTION: A base material 11, which has a functional film being a work, is carried to below a vacuum vessel 14 by carriage means and is positioned in a processing position. After positioning of the base material 11, the vacuum vessel 14 is lowered, and an opening 18 sticks fast to the region of an SiO2 film 13 to be removed. In this condition, an exhaust valve 16 is opened to evacuate the inside of the vacuum vessel 1. Then, when the interior of the vacuum vessel 14 comes to a prescribed vacuum level, a gas inlet valve 17 is opened to introduce CF4 gas into the vacuum vessel 14 for etching. Then, a metallic layer formed at the removal section of the SiO2 film 13 by the same processing.

公开(公告)号：JP2000313957A

公开(公告)日：2000-11-14

申请号：JP12009699

申请日：1999-04-27

Applicant: SONY CORP

Inventor： OMI MOTOSUKE ,  KAKINUMA MASAYASU ,  KAWASHIMA TOSHITAKA

IPC: H01L21/203 ,  C23C14/35

Abstract: PROBLEM TO BE SOLVED: To provide a sputtering cathode in which the region of a magnetic flux parallel to the face of a target is widen without increasing its scale, the utilizing effeiciency of the target is improved, and film formation can be executed at a high speed with high efficiency and high uniformity and to provide a sputtering system. SOLUTION: In a cathode housing 6, the back sides of a target 4 and a backing plate 5 are deposited with inner circumferential magnets 10 and outer circumferential magnets 11. In this depositing constitution, the cylindrical inner circumferential magnets 10 are deposited slantly to the inside and the cylindrical outer circumferential magnets 11 to the outside by plural pieces on the circumference, and they are fitted to a magnet fitting board. The surfaces of the edge parts of the mutual magnetic poles of the inner circumferential magnets 10 and the outer circumferential magnets 11 have reverse polarity. The magnetic flux goes out from the inner circumferential magnet 10, once widens, goes out from the surface of the target 4, again widens and progresses toward the outer circumferential magnet 11.

公开(公告)号：JP2000311882A

公开(公告)日：2000-11-07

申请号：JP12063299

申请日：1999-04-27

Applicant: SONY CORP

Inventor： KAKINUMA MASAYASU ,  KAWASHIMA TOSHITAKA

IPC: H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To obtain a local vacuum treating apparatus with a structure, where a stable vacuum treatment can be performed to a material to be worked, the cycle time for vacuum treatment is also comparatively short, and is simple in the structure. SOLUTION: A material 1 to be worked is positioned at a prescribed position, and after that an inert gas is introduced from an inert gas inlet vent 6 into a vacuum bath 3 and in a state that the air pressure in the tank 3 is increased higher than the atmospheric pressure, an arm 13 of a valve part 10 is rotated in the counterclockwise direction by 90 degrees centered around a fulcrum shaft 12 to make a valve body 11 separate from an aperture 2, the bath 3 is descendingly moved to the position of the material 1 to shut the aperture 1 with the material 1, and after that, etching of the projected region part of the aperture 2 on the material 1 is performed. Then, in a state in which inert gas is introduced from the vent 6 into the tank 3 and the air pressure in the tank 3 is increased higher than the atmospheric pressure, the arm 13 is rotated in the clockwise direction by 90 degrees, and the valve body 11 is closely adhered uniformly to an O-ring 7 to shut the aperture 2. For this, the surface of an electrode part 5 is not oxidized by oxygen in the atmosphere.

公开(公告)号：JP2000215851A

公开(公告)日：2000-08-04

申请号：JP1700299

申请日：1999-01-26

Applicant: SONY CORP

Inventor： KAWASHIMA TOSHITAKA ,  OSAKO JUNICHI

IPC: H01J61/35

Abstract: PROBLEM TO BE SOLVED: To improve the luminous efficiency of a metal halide discharge tube by arranging an IR dichroic mirror reflecting infrared rays or/and a UV filter absorbing ultraviolet rays as an optical filter at a translucent section. SOLUTION: A translucent section 3 is provided on the front face of an envelope 2, and the translucent section 3 is covered with a front lens 4. A metal halide discharge tube 5 is arranged in the envelope 2, and a reflecting face is formed on the inner face of the envelope 2. An IR dichroic mirror 6 reflecting the light in the infrared ray range is coated on the front face of the front lens 4 as an optical filter. The IR dichroic mirror 6 reflects only the light in the infrared ray range within the light emitted from the metal halide discharge tube 5 and transmits visible light. Infrared rays are returned to the inside to heat the metal halide discharge tube 5, the halogen vapor pressure in the metal halide discharge tube 5 is increased, and luminescence intensity is increased.

公开(公告)号：JPH09283300A

公开(公告)日：1997-10-31

申请号：JP11949696

申请日：1996-04-18

Applicant: SONY CORP

Inventor： KAWASHIMA TOSHITAKA

IPC: H05H1/46 ,  C23C14/35 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To easily perform complicated machining processing by precisely controlling the moving speed and direction of ions in plasma. SOLUTION: Power is supplied from a high frequency power source to an antenna 14 to generate a semi-electrostatic induction field Eps in a chamber 11, so that high density plasma P is formed in a wide range for an alternating current to flow in a multiphase alternating current magnet 17 with a multiphase alternating current inverter power source. As a result, flux density B horizontally develops on a semiconductor wafer 13 and the field rotates at a frequency set by the multiphase alternating current inverter power source. In this way, a rotating field E is generated on the surface of the wafer 13, where an electric field Ev is generated in a vertical direction an electric field Eh is generated in the horizontal direction for which the rotating field Enag is added to the induction field Eps by the antenna 14, and the combined electric field Ec of the electric field Eh and the electric field Ev is generated at a preset angle to the surface of the wafer 13.

公开(公告)号：JPH08181119A

公开(公告)日：1996-07-12

申请号：JP32468294

申请日：1994-12-27

Applicant: SONY CORP

Inventor： MOTOHORI ISAO ,  KIZAKIHARA TOSHIROU ,  KAWASHIMA TOSHITAKA ,  SAKAUCHI SATOSHI ,  CHIBA TOMOHIRO

IPC: H05H1/46 ,  C23C14/35 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE: To provide the title plasma processor capable of even processing while cutting down the maintenance frequency of a chamber. CONSTITUTION: The title plasma processor 1 is provided with a carrier member 4 for carrying a part of microwaves along the inner wall of a chamber 2 outside the chamber 2 comprising a reaction chamber 21 as well as a reflecting member 5 for reflecting microwaves. Furthermore, carrying member 4 and a reflecting member 5 are provided outside the chamber 2 to adjust the plasma density near the inner wall of the chamber 2 for splitly arrange the carrying member 4, as well as shifting the phases of respective microwaves propagated by said member 4.

公开(公告)号：JPH0845699A

公开(公告)日：1996-02-16

申请号：JP23481594

申请日：1994-09-29

Applicant: SONY CORP

Inventor： KIZAKIHARA TOSHIROU ,  KOJIMA AKIRA ,  KATO TAIJI ,  MOTOHORI ISAO ,  SAKAUCHI SATOSHI ,  CHIBA TOMOHIRO ,  KAWASHIMA TOSHITAKA

IPC: H05H1/46 ,  C23C14/32 ,  C23C14/34 ,  C23C16/50 ,  C23F4/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE:To provide a plasma control method and plasma processing device which can control the direction of ions and/or electrons in a plasma. CONSTITUTION:An electric field EV is generated in the direction vertical to the surface of an object to be processed 10 in a plasma 13 atmosphere prepared in a processing chamber 1 while an electric field EH is generated in the direction horizontal relative to the object surface, and on the basis of the synthesized electric field EC obtained therefrom the directions of ions and electrons in the plasma 13 are controlled. This plasma control method includes a vertical electric field generating means to generate the electric field EV and 4 horizontal electric field generating means to generate the electric field EH.

公开(公告)号：JPH0559536A

公开(公告)日：1993-03-09

申请号：JP24679991

申请日：1991-08-30

Applicant: SONY CORP

Inventor： KAWASHIMA TOSHITAKA

IPC: C23C14/24

Abstract: PURPOSE:To increase the efficiency of using evaporating material, to increase the depositing rate and furthermore to reduce the fear of the damage of a substrate. CONSTITUTION:A hollow target 9 is used as the cathode as well as a shield sheet 11 as the anode, and in an atmosphere contg. an inert gas introduced from a gas introducing port 2 into a vacuum vessel 1, electric discharge is generated between the above anode and cathode to form plasma 13 of high temp. and high density on the hollow part of the hollow target 9. In this way, by the action of the plasma 13 of high temp. and high density in addition to the action of sputtering and self-sputtering of ions generated by the electric discharge, atoms or molecules are evaporated from the inside wall of the hollow target 9, and they pass through the opening 9c of the hollow target 9 and deposit on a substrate, and film forming is executed.