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公开(公告)号：US20130078411A1
公开(公告)日：2013-03-28
申请号：US13624162
申请日：2012-09-21
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： Remigijus Gaska , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Michael Shur
IPC: B32B9/00 , C09K11/08 , C09D201/04 , C09D163/00 , C08K3/28 , C08K3/38 , C09D5/00 , B32B7/00 , C08K3/40 , B82Y30/00
CPC classification number: C09D163/00 , C09K11/02 , C09K11/08 , H01L33/56 , Y10T428/23
Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.
Abstract translation: 提供了可用作紫外线装置的密封剂的复合材料。 复合材料包括基体材料和掺入基质材料中的至少部分对目标波长的紫外线辐射部分透明的填料。 填充材料包括微粒和/或纳米颗粒，并且可以具有明显小于相关大气条件下的基质材料的热膨胀系数的热膨胀系数。 相关的大气条件可以包括以下各项中存在的温度和压力：用于制造包括复合材料的器件封装的固化和冷却过程以及器件封装内的紫外线器件的正常操作。
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公开(公告)号：US12171535B2
公开(公告)日：2024-12-24
申请号：US17372933
申请日：2021-07-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur
Abstract: Approaches for evaluating fluid based on fluorescent sensing is disclosed. In one approach, a nanoparticle injector is configured to inject nanoparticles into a fluid. A detector is configured to determine a presence of the nanoparticles in the fluid. The detector can include a radiation source configured to irradiate the fluid with a target radiation and a fluorescent meter configured to measure an amount of fluorescence emitted from the fluid irradiated with the radiation. A control unit is configured to determine the a set of attributes corresponding to the fluid as a function of the measured amount of fluorescence.
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公开(公告)号：US11375595B2
公开(公告)日：2022-06-28
申请号：US16595103
申请日：2019-10-07
Applicant: Sensor Electronic Technology, Inc.
Inventor： Arthur Peter Barber , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Robert M. Kennedy
IPC: H05B47/105 , A01G7/04 , G01J1/42 , G01N21/64
Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.
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公开(公告)号：USRE48943E1
公开(公告)日：2022-02-22
申请号：US16814607
申请日：2020-03-10
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Maxim S. Shatalov , Jinwei Yang , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
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公开(公告)号：US11246266B2
公开(公告)日：2022-02-15
申请号：US17101245
申请日：2020-11-23
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Alexander Dobrinsky , Maxim S. Shatalov , Arthur Peter Barber, III
IPC: A01G7/04 , G01N21/55 , G01J3/10 , G01J3/42 , G01J3/44 , G01J3/443 , A01G22/00 , A01G9/20 , G05B15/02
Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.
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Patent Agency Ranking
公开(公告)号：US10964862B2
公开(公告)日：2021-03-30
申请号：US15720352
申请日：2017-09-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Alexander Dobrinsky
IPC: H01L33/58 , H01L31/0232 , H01L31/0236 , H01L33/08 , H01L31/12 , H01L31/0352 , H01L31/101 , H01L33/32
Abstract: A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. For example, a mesa can include two or more active regions, each of which has a different wavelength for the corresponding main peak of radiative recombination. The active regions can be configured to be operated simultaneously or can be capable of independent operation. A system can include one or more optoelectronic devices, each of which can be operated as an emitter or a detector.
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公开(公告)号：US20210076573A1
公开(公告)日：2021-03-18
申请号：US17107117
申请日：2020-11-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur
Abstract: A solution for illuminating plants is provided. An illustrative system can include: a set of visible light sources configured to emit visible radiation directed at the plant; a set of ultraviolet radiation sources configured to emit ultraviolet radiation directed at the plant; and a set of sensors, wherein at least one sensor is configured to detect a fluorescence emitted from the plant due to the ultraviolet radiation and a fluorescence emitted from the plant due to the visible radiation.
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公开(公告)号：US10950747B2
公开(公告)日：2021-03-16
申请号：US16012943
申请日：2018-06-20
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Alexander Dobrinsky , Maxim S. Shatalov , Michael Shur
Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
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公开(公告)号：US10907055B2
公开(公告)日：2021-02-02
申请号：US15422749
申请日：2017-02-02
Applicant: Sensor Electronic Technology, Inc.
Inventor： Timothy James Bettles , Michael Shur , Alexander Dobrinsky , Maxim S. Shatalov
IPC: B05C9/14 , C09D5/32 , B05D3/06 , C09D11/101 , C09D201/00 , C09J9/00 , C09J201/00 , G21K5/02
Abstract: An approach for curing ultraviolet sensitive polymer materials (e.g., polymer inks, coatings, and adhesives) using ultraviolet radiation is disclosed. The ultraviolet sensitive polymer materials curing can utilize ultraviolet light at different wavelength emissions arranged in a random, mixed or sequential arrangement. In one embodiment, an ultraviolet light C (UV-C) radiation emitter having a set of UV-C sources that emit UV-C radiation at a predetermined UV-C duration and intensity operate in conjunction with an ultraviolet light B (UV-B) radiation emitter having a set of UV-B sources configured to emit UV-B radiation at a predetermined UV-B duration and intensity and/or an ultraviolet light A (UV-A) radiation emitter having a set of UV-A sources configured to emit UV-A radiation at a predetermined UV-A duration and intensity, to cure the ultraviolet sensitive polymer materials.
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公开(公告)号：US10770616B2
公开(公告)日：2020-09-08
申请号：US16101646
申请日：2018-08-13
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Alexander Dobrinsky , Maxim S. Shatalov
IPC: H01L33/00 , H01L21/02 , H01L21/304 , H01L21/78 , H01L21/306 , H01L21/683
Abstract: Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
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