Abstract:
PROBLEM TO BE SOLVED: To provide a cylindrical motor which secures necessary torque and can downsize the entire equipment in which the motor is to be incorporated.SOLUTION: An outer rotor member 5 of an outer rotor brushless motor is used as a carrier which is a component of 2K-H type planetary gear mechanism type II, and an output shaft 23 of the planetary gear mechanism is provided for a housing member 21 covering the outer rotor member 5. This constitution can make the size of a speed reducer mechanism smaller in its thickness direction and realize a flat and small driving unit for the equipment without impairing the flatness of the outer brushless motor.
Abstract:
PROBLEM TO BE SOLVED: To provide a garnet single crystal which contains no lead while using a crucible made of platinum, is free from deterioration in quality and rich in mass-productivity, and has an insertion loss of ≤0.10 dB.SOLUTION: A Bi-substituted rare earth iron garnet single crystal has a composition represented by RBiFeAO(wherein, R must contain Gd, and may optionally contain at least one rare earth element; A represents at least one element selected from a group consisting of Ga, Al, In, or the like; x is >0.7 and ≤1.5; and w is >0 and ≤1.5), does not contain Pb but contains Pt, and contains Mn or at least one element of the group II elements. When Mn or the at least one element of the group II elements is expressed as M, the concentration (atppm) of M in the Bi-substituted rare earth iron garnet single crystal is expressed as [M], and the concentration (atppm) of Pt is expressed as [Pt], and further, the relational expression Δ of [M] and [Pt] is represented as Δ=(0.8[M])-[Pt], the value of Δ is set to be within the range of -0.34 to 2.87 atppm.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which the reproducibility of the content of a dopant for each gallium oxide single crystal is improved. SOLUTION: For example, in the production of a gallium oxide single crystal by an EFG (Edge Defined Film Fed Growth) method, after adding a dopant oxide to a raw material containing gallium oxide, wherein the dopant oxide has such a melting point that the difference between the melting point of the raw material and the melting point thereof is within ±300°C, the resulting mixture is melted in a crucible 3, then a seed crystal 10 is brought into contact with the resulting melt 2, and the gallium oxide single crystal 13 is grown from the melt 2. The control of the evaporation amount of the dopant to the raw material becomes easy by setting the difference between the melting point of the raw material containing gallium oxide and the melting point of the dopant oxide being added to the raw material to be within ±300°C. The control of the dopant content contained in the gallium oxide single crystal to be crystal-grown is therefore facilitated. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a joined body which does not sacrifice a shape and properties of each component, has high joint reliability and can withstand practical use. SOLUTION: The joined body includes two or more precision components joined to each other. At least one of the precision components is formed of an alloy having an amorphous phase as a main phase. In the joined body of precision components, a joining base material, which is represented by a compositional formula shown by general formula (1), and melts in a temperature zone of a crystallization temperature or below of the alloy having the amorphous phase as the main phase, is used in a joint interface. Alternatively, in the joined body of precision components, a foil layer containing at least one of Au, Pt, Pd, and Ni is used on a joint interface side of a member formed of an alloy having an amorphous phase as a main phase, and a joining base material represented by a compositional formula shown by general formula (1) is used on a joint interface. General formula (1) is shown by: Au 100-x M x wherein M represents any group of elements indispensably including at least one of Si, Ge, and Sn; and x is atom% and meets a requirement of 17.5≤x≤40. COPYRIGHT: (C)2011,JPO&INPIT