Substrate support having customizable and replaceable features for enhanced backside contamination performance

    公开(公告)号:US11114330B2

    公开(公告)日:2021-09-07

    申请号:US16549239

    申请日:2019-08-23

    Abstract: A workpiece support has a support surface where one or more standoffs are selectively removably coupled to the support surface. The one or more standoffs are operable to support a workpiece at a predetermined standoff distance from the support surface. A gap may be defined between the support surface and the workpiece. The one or more standoffs may be an electrically insulative film, such as a polyimide film that is selectively removably coupled to the support surface by an adhesive. The workpiece support may be an electrostatic chuck (ESC). Electrodes positioned below the support surface may electrostatically attract the workpiece toward the support, where a gas may be introduced in the gap.

    In-situ wafer temperature measurement and control

    公开(公告)号:US10903097B2

    公开(公告)日:2021-01-26

    申请号:US16367948

    申请日:2019-03-28

    Abstract: A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

    Ion source with tailored extraction shape

    公开(公告)号:US10714296B2

    公开(公告)日:2020-07-14

    申请号:US16217664

    申请日:2018-12-12

    Abstract: An ion implantation system including an ion source for use in creating an ion beam is disclosed. The ion source has an ion source arc chamber housing that confines a high density concentration of ions within the chamber housing. An extraction member defining an appropriately configured extraction aperture allows ions to exit the source arc chamber. In a preferred embodiment, the extraction member defines a tailored extraction aperture shape for modifying an ion beam profile and producing a substantially uniform beam current across a dimension of the ion beam. The extraction aperture member defines an aperture in the form of an elongated slit having a width that varies, with wide ends and a narrow middle. The midsection of the extraction aperture has a narrower width than the opposite end sections. The tailored shape of the extraction aperture includes a central portion having a first width dimension, and first and second distal portions extending from opposite sides of the central portion, the opposed distal portions having a second width dimension that is greater than the first width dimension of the central portion.

    REDUCTION OF CONDENSED GASES ON CHAMBER WALLS VIA HEATED CHAMBER HOUSING FOR SEMICONDUCTOR PROCESSING EQUIPMENT

    公开(公告)号:US20200219705A1

    公开(公告)日:2020-07-09

    申请号:US16239995

    申请日:2019-01-04

    Inventor: John F. Baggett

    Abstract: A workpiece processing system has a chamber with one or more chamber walls defining surfaces enclosing a chamber volume. One or more chamber wall heaters selectively heat the chamber walls to a chamber wall temperature. A workpiece support within the chamber selectively supports a workpiece having one or more materials having a respective condensation temperature, above which, the one or more materials are respectively in a gaseous state. A heater apparatus selectively heats the workpiece to a predetermined temperature. A controller heats the workpiece to the predetermined temperature by controlling the heater apparatus, heating the one or more materials to respectively form one or more outgassed materials within the chamber volume. The controller further controls the chamber wall temperature by controlling the chamber wall heaters, where the chamber wall temperature is greater than a condensation temperature of the outgassed materials, preventing condensation of the outgassed material on the chamber surfaces.

    SYSTEM AND METHOD FOR ALIGNING LIGHT-TRANSMITTING BIREFRINGENT WORKPIECES

    公开(公告)号:US20200075379A1

    公开(公告)日:2020-03-05

    申请号:US16114745

    申请日:2018-08-28

    Abstract: A workpiece alignment system has a light emission apparatus to direct a beam of light toward a first side of a workpiece through a first polarizer apparatus. A light receiver apparatus positioned on a second side of the workpiece receives the beam of light through a second polarizer apparatus between the workpiece and the light receiver apparatus. A workpiece support supports the workpiece. A rotation device selectively supports and rotates the workpiece support about a support axis. A controller determines a position of the workpiece based on an amount of the beam of light received by the light receiver apparatus. The controller determines a position of the workpiece when the workpiece is supported and rotated based, at least in part, on a rotational position of the workpiece support and at least a portion of the beam of light received by the light receiver apparatus.

    In situ beam current monitoring and control in scanned ion implantation systems

    公开(公告)号:US10395889B2

    公开(公告)日:2019-08-27

    申请号:US15258723

    申请日:2016-09-07

    Abstract: A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system can be configured to generate a control signal for interlocking the ion beam transport in the ion implantation system or for varying an input to at least one beam optical element to control variations in beam current.

    Ion source repeller shield comprising a labyrinth seal

    公开(公告)号:US10361069B2

    公开(公告)日:2019-07-23

    申请号:US15477680

    申请日:2017-04-03

    Abstract: An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaft with a third diameter and a head with a fourth diameter. The third diameter is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter between the second and fourth diameters. A spacing between the liner and electrode lips defines a labyrinth seal to generally prevent contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

    SHALLOW ANGLE, MULTI-WAVELENGTH, MULTI-RECEIVER, ADJUSTABLE SENSITIVITY ALIGNER SENSOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT

    公开(公告)号:US20190120617A1

    公开(公告)日:2019-04-25

    申请号:US16170085

    申请日:2018-10-25

    Abstract: A workpiece alignment system is provided has a light emission apparatus that directs a light beam at a plurality of wavelengths along a path at a shallow angle toward a first side of a workpiece plane at a peripheral region. A light receiver apparatus, receives the light beam on a second side opposite the first side. A rotation device selectively rotates a workpiece support. According controller determines a position of the workpiece based on an amount of the light beam received through the workpiece when the workpiece intersects the path. A sensitivity of the light receiver apparatus is controlled based on a transmissivity of the workpiece. A position of the workpiece is determined when the workpiece is rotated based on the rotational position, an amount of the light beam received, the transmissivity of the workpiece, detection of a workpiece edge, and the controlled sensitivity of the light receiver apparatus.

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