公开(公告)号：WO2004030049A2

公开(公告)日：2004-04-08

申请号：PCT/US2003/029978

申请日：2003-09-25

Applicant: TOKYO ELECTRON LIMITED ,  CHEN, lee ,  LUDVIKSSON, Audunn

Inventor： CHEN, lee ,  LUDVIKSSON, Audunn

IPC: H01L21/00

CPC classification number: H01L21/28185 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/67253 ,  H01L29/51 ,  H01L29/517

Abstract: A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.

Abstract translation: 在制造集成电路期间去除高k电介质材料层的系统和方法。 在本发明的一个实施方案中，当与高k层反应时，使用蚀刻反应物形成挥发性蚀刻产物。 或者，高k层可以根据图案化的光致抗蚀剂或硬掩模进行各向异性蚀刻，其中使用中性原子的超热束来帮助蚀刻反应物与高k层的反应。 或者，可以使用中性原子的超热束或等离子体处理来修饰高k层，随后使用与修饰的高k层反应的蚀刻反应物蚀刻修饰的高k层。 在本发明的另一个实施例中，使用中性原子的超热束来通过物理轰击高k层蚀刻高k层。

公开(公告)号：WO2004003256A1

公开(公告)日：2004-01-08

申请号：PCT/US2003/016240

申请日：2003-06-27

Applicant: TOKYO ELECTRON LIMITED ,  CHEN, Lee ,  LUDVIKSSON, Audunn

Inventor： CHEN, Lee ,  LUDVIKSSON, Audunn

IPC: C23F1/00

CPC classification number: C23F1/12 ,  B81C1/00492 ,  B81C2201/0143 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76838

Abstract: A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

Abstract translation: 用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。 本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370） （390）。 本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

公开(公告)号：WO2003079404A3

公开(公告)日：2003-09-25

申请号：PCT/US2003/006154

申请日：2003-03-11

Applicant: TOKYO ELECTRON LIMITED ,  CHEN, Lee

Inventor： CHEN, Lee

IPC: C23C16/00

Abstract: An improved substrate holder (100) comprises an electrode (110) supporting a focus ring (118) and a substrate (122), an insulating member (114) surrounding the electrode (110) and focus ring (118), a ground member (114) surrounding the insulating member (112), and a focus ring surrounding the substrate. The focus ring provides a RF impedance substantially equivalent to a RF impedance of the substrate. A method of processing a substrate utilizing the improved substrate holder reduces arcing between the edge of the substrate and the focus ring.

公开(公告)号：WO2012050747A3

公开(公告)日：2012-05-31

申请号：PCT/US2011052225

申请日：2011-09-19

Applicant: A10 NETWORKS INC ,  KANNAN LALGUDI NARAYANAN ,  SZETO RONALD WAI LUN ,  CHEN LEE ,  XU FEILONG ,  JALAN RAJKUMAR

Inventor： KANNAN LALGUDI NARAYANAN ,  SZETO RONALD WAI LUN ,  CHEN LEE ,  XU FEILONG ,  JALAN RAJKUMAR

IPC: H04L12/24 ,  G06F15/16 ,  H04L29/06

CPC classification number: H04L67/1008 ,  H04L67/02 ,  H04L67/1002

Abstract: A method, system, and computer program product for balancing servers based on server load status, include: receiving from a server a service response to a service request, the service response including a result from a processing of the service request and a server status indicating a computing load status of the server; obtaining the server status from the service response; receiving a next service request from a host, the next service request comprising a Uniform Resource Locator (URL); determining that the server is configured to process the URL; determining whether the server status indicates that the server is available to process the next service request; and in response to determining that the server status indicates that the server is available to process the next service request, sending the next service request to the server.

Abstract translation: 一种用于基于服务器负载状态来平衡服务器的方法，系统和计算机程序产品，包括：从服务器接收对服务请求的服务响应，所述服务响应包括来自服务请求的处理的结果和指示服务器状态 服务器的计算负载状态; 从服务响应中获得服务器状态; 接收来自主机的下一个服务请求，所述下一个服务请求包括统一资源定位符（URL）; 确定服务器被配置为处理该URL; 确定服务器状态是否指示服务器可用于处理下一服务请求; 以及响应于确定服务器状态指示服务器可用于处理下一服务请求，向服务器发送下一服务请求。

公开(公告)号：WO2011149796A3

公开(公告)日：2012-04-19

申请号：PCT/US2011037475

申请日：2011-05-20

Applicant: A10 NETWORKS INC ,  CHEN LEE ,  CHIONG JOHN ,  OSHIBA DENNIS

Inventor： CHEN LEE ,  CHIONG JOHN ,  OSHIBA DENNIS

IPC: H04L12/22 ,  H04L29/06

CPC classification number: H04L63/0263 ,  G06F21/00 ,  G06F21/44 ,  H04L12/66 ,  H04L51/04 ,  H04L63/02 ,  H04L63/0227 ,  H04L63/0236 ,  H04L63/0245 ,  H04L63/0254 ,  H04L63/029 ,  H04L63/0407 ,  H04L63/08 ,  H04L63/10 ,  H04L63/102 ,  H04L63/105 ,  H04L63/164 ,  H04L63/168 ,  H04L63/20 ,  H04L63/30 ,  H04L65/1026 ,  H04L67/10 ,  H04L67/1004 ,  H04L67/104 ,  H04L67/141 ,  H04L67/22 ,  H04L67/306 ,  H04L67/42 ,  H04L69/28 ,  H04L69/329 ,  H04M1/72547 ,  H04W12/00

Abstract: Method for applying a security policy to an application session, includes: recognizing the application session between a network and an application via a security gateway; determining by the security gateway a user identity of the application session using information about the application session; obtaining by the security gateway the security policy comprising network parameters mapped to the user identity; and applying the security policy to the application session by the security gateway. The user identity may be a network user identity or an application user identity recognized from packets of the application session. The security policy may comprise a network traffic policy mapped and/or a document access policy mapped to the user identity, where the network traffic policy is applied to the application session. The security gateway may further generate a security report concerning the application of the security policy to the application session.

Abstract translation: 将安全策略应用于应用会话的方法包括：通过安全网关识别网络与应用之间的应用会话; 使用关于应用会话的信息由安全网关确定应用会话的用户身份; 由安全网关获取包括映射到用户身份的网络参数的安全策略; 并将安全策略应用于安全网关的应用会话。 用户身份可以是从应用会话的分组识别的网络用户身份或应用用户身份。 安全策略可以包括被映射的网络流量策略和/或映射到用户身份的文档访问策略，其中将网络流量策略应用于应用会话。 安全网关还可以生成关于安全策略应用于应用会话的安全报告。

公开(公告)号：WO2011087984A2

公开(公告)日：2011-07-21

申请号：PCT/US2011/020668

申请日：2011-01-10

Applicant: TOKYO ELECTRON LIMITED ,  CHEN, Lee ,  FUNK, Merritt

Inventor： CHEN, Lee ,  FUNK, Merritt

IPC: H01L21/467

CPC classification number: H01L21/32139 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28123

Abstract: The invention can provide apparatus and methods of processing a substrate in real- time using a switchable quasi-neutral beam system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used in an etch procedure to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用可切换准中性束系统实时处理衬底的装置和方法，以改善光致抗蚀剂层的耐蚀刻性。 此外，改进的光致抗蚀剂层可以用于蚀刻过程中以更准确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线 宽度粗糙度（LWR）。

公开(公告)号：WO2011049770A2

公开(公告)日：2011-04-28

申请号：PCT/US2010/052209

申请日：2010-10-12

Applicant: A10 NETWORKS INC. ,  CHEN, Lee ,  CHIONG, John

Inventor： CHEN, Lee ,  CHIONG, John

IPC: H04L12/28

CPC classification number: H04L41/12 ,  H04L29/12066 ,  H04L61/1511 ,  H04L67/1002 ,  H04L67/1021 ,  H04L67/1036

Abstract: A method and system to determine a web server based on geo-location information is disclosed. The system includes: a local DNS server coupled to a web client; a plurality of web servers; and a global load balancer coupled to the local DNS server. The global load balancer: receives a request for a web service sent by the web client, the request comprising local DNS server information; determines a geographic location for the local DNs server based on the local DNS server information; determines a web server from the plurality of web servers based on the requested web service; determines a geographic location for the determined web server; determines that the geographic location for the local DNS server matches the geographic location for the determined web server; selects the determined web server; and sends a response comprising information on the selected web server to the local DNS server.

Abstract translation: 公开了一种基于地理位置信息确定Web服务器的方法和系统。 该系统包括：耦合到web客户端的本地DNS服务器; 多个web服务器; 以及耦合到本地DNS服务器的全局负载平衡器。 全局负载平衡器：接收由Web客户端发送的Web服务的请求，该请求包括本地DNS服务器信息; 基于本地DNS服务器信息确定本地DN服务器的地理位置; 基于所请求的web服务从多个web服务器确定web服务器; 确定所确定的web服务器的地理位置; 确定本地DNS服务器的地理位置与确定的Web服务器的地理位置相匹配; 选择确定的Web服务器; 并将包含所选web服务器上的信息的响应发送到本地DNS服务器。

公开(公告)号：WO2011044053A1

公开(公告)日：2011-04-14

申请号：PCT/US2010/051347

申请日：2010-10-04

Applicant: TOKYO ELECTRON LIMITED ,  ZHAO, Jianping ,  CHEN, Lee

Inventor： ZHAO, Jianping ,  CHEN, Lee

IPC: H01L21/306 ,  H01L21/3105

CPC classification number: H01L21/3146 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76844

Abstract: A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.

Abstract translation: 描述了一种将氟基电介质与金属化方案集成的方法。 该方法包括在基板上形成氟基电介质层，在基板上形成含金属层，并在氟基介电层之间的界面附近添加缓冲层或修饰氟基电介质层的组成 和含金属层。

公开(公告)号：WO2006050352A9

公开(公告)日：2009-10-22

申请号：PCT/US2005039444

申请日：2005-10-28

Applicant: VITATEX INC ,  CHEN WEN-TIEN ,  CHEN LEE ,  CHEN CHE

Inventor： CHEN WEN-TIEN ,  CHEN LEE ,  CHEN CHE

IPC: C12Q1/02 ,  C12M1/00 ,  C12M1/34 ,  C12M3/00 ,  C12N5/00 ,  C12N11/02 ,  C12Q1/68 ,  G01N1/30 ,  G01N33/48 ,  G01N33/50

CPC classification number: G01N33/5091 ,  G01N1/30 ,  G01N33/574

Abstract: Methods and devices for isolating and diagnosing disease with a cell adhesion matrix system, -mimicking a metastatic, cardiovascular or placental environment, are disclosed. The cell adhesion matrix facilitates the enrichment of target cells such as metastatic tumor cells, fetal cells and endothelial progenitor cells from a fluid sample such as blood for diagnostic and therapeutic applications in treating patients afflicted with disease, such as cancerous, cardiovascular and fetal diseases, as well as for research applications in molecular analysis of metastatic, and cardiovascular and fetal diseases. Blood test prototypes and methods for the cell enrichment and detection of circulating tumor and endothelial cells using multiplex molecular analysis are described herein. In addition, methods and compositions for determining host immunity to tumor in subjects with risk of cancer progression and methods for isolating an enriched fraction of fetal cells from pregnant females for prenatal diagnosis are also described herein.

Abstract translation: 公开了用细胞粘附基质系统分离和诊断疾病的方法和装置， - 模拟转移性，心血管或胎盘环境。 细胞粘附基质促进靶细胞如来自流体样品例如血液的转移性肿瘤细胞，胎儿细胞和内皮祖细胞的富集，用于治疗患有疾病如癌，心血管和胎儿疾病的患者的诊断和治疗应用， 以及用于转移性和心血管和胎儿疾病分子分析中的研究应用。 本文描述了使用多重分子分析用于细胞富集和检测循环肿瘤和内皮细胞的血液测试原型和方法。 此外，本文还描述了用于确定具有癌症发展风险的受试者中具有肿瘤宿主免疫性的方法和组合物，以及用于从孕妇分离胎儿细胞的富集部分用于产前诊断的方法和组合物。

公开(公告)号：WO2006038974A3

公开(公告)日：2009-04-23

申请号：PCT/US2005028321

申请日：2005-08-10

Applicant: TOKYO ELECTRON LTD ,  KO AKITERU ,  XIA ANNIE ,  CHEN LEE

Inventor： KO AKITERU ,  XIA ANNIE ,  CHEN LEE

IPC: H01L21/302 ,  H01L21/461 ,  H01L29/76

CPC classification number: H01L21/31122 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31645 ,  H01L29/517

Abstract: A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

Abstract translation: 用于等离子体处理高k层的方法包括在处理室中的衬底保持器上提供其上形成有高k层的衬底，并在处理室中产生等离子体，从而将高k层暴露于 等离子体。 RF功率施加到衬底保持器，RF功率具有降低位于衬底和高k层之间的氧化物界面层的形成速率的特性。 一种器件包括蚀刻在高k层中的特征。 器件的蚀刻轮廓可以包括缩小的鸟嘴，并且蚀刻区域中的衬底的表面可以在非蚀刻区域下与衬底基本共面。