公开(公告)号：KR1020020033349A

公开(公告)日：2002-05-06

申请号：KR1020000064166

申请日：2000-10-31

Applicant: 재단법인서울대학교산학협력재단

Inventor： 한민구 ,  전재홍 ,  이민철

IPC: G02F1/136

Abstract: PURPOSE: A method of fabricating a polysilicon thin film transistor using excimer laser annealing is provided to increase the grain size of a channel of a polysilicon thin film transistor and orderly arrange grain boundaries in order to reduce grain boundary density in the channel. CONSTITUTION: An amorphous silicon thin film is formed on a wafer on which an oxide layer is formed or a glass substrate. A photoresist pattern is formed on a portion of the amorphous silicon thin film, corresponding to a channel region, and impurity ions are implanted into the amorphous silicon thin film. An aluminum thin film pattern is selectively formed on the portion of the amorphous silicon thin film other than the channel region. Excimer laser is irradiated on the amorphous silicon thin film to change the film into a polysilicon thin film. The aluminum pattern is removed and excimer laser is irradiated on the polysilicon thin film to activate the implanted impurity ions. A gate insulating layer is formed on the polysilicon active layer. A gate is formed on the gate insulating layer.

Abstract translation: 目的：提供使用准分子激光退火制造多晶硅薄膜晶体管的方法，以增加多晶硅薄膜晶体管的沟道的晶粒尺寸并且有序地布置晶界以便减小沟道中的晶界密度。 构成：在其上形成有氧化物层的晶片或玻璃基板上形成非晶硅薄膜。 在非晶硅薄膜的与沟道区对应的部分上形成光致抗蚀剂图案，并将杂质离子注入到非晶硅薄膜中。 在除了沟道区域之外的非晶硅薄膜的部分上选择性地形成铝薄膜图案。 将准分子激光照射在非晶硅薄膜上，将薄膜变成多晶硅薄膜。 去除铝图案并且将准分子激光照射在多晶硅薄膜上以激活注入的杂质离子。 在多晶硅有源层上形成栅极绝缘层。 栅极形成在栅极绝缘层上。