公开(公告)号：US09391013B2

公开(公告)日：2016-07-12

申请号：US14813014

申请日：2015-07-29

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Ram S. Viswanath ,  Sriram Srinivasan ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Sairam Agraharam

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/13 ,  H01L25/065

CPC classification number: H01L23/49838 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/00

Abstract: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in the window of the interposer and interconnected to the top semiconductor die. In another example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in a same plane as the interposer and interconnected to the top semiconductor die.

公开(公告)号：US20160197037A1

公开(公告)日：2016-07-07

申请号：US15049500

申请日：2016-02-22

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20160181218A1

公开(公告)日：2016-06-23

申请号：US14576166

申请日：2014-12-18

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Debendra Mallik ,  Bassam M. Ziadeh ,  Yoshihiro Tomita

IPC: H01L23/00 ,  H01L25/00 ,  H01L23/29 ,  H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H01L25/065

CPC classification number: H01L21/563 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81211 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Embodiments of the invention include device packages and methods of forming such packages. In an embodiment, the method of forming a device package may comprise forming a reinforcement layer over a substrate. One or more openings may be formed through the reinforcement layer. In an embodiment, a device die may be placed into one of the openings. The device die may be bonded to the substrate by reflowing one or more solder bumps positioned between the device die and the substrate. Embodiments of the invention may include a molded reinforcement layer. Alternative embodiments include a reinforcement layer that is adhered to the surface of the substrate with an adhesive layer.

Abstract translation: 本发明的实施例包括形成这种包装的装置包装和方法。 在一个实施例中，形成器件封装的方法可以包括在衬底上形成加强层。 可以通过加强层形成一个或多个开口。 在一个实施例中，器件裸片可以放置在其中一个开口中。 器件管芯可以通过回流位于器件管芯和衬底之间的一个或多个焊料凸块来结合到衬底。 本发明的实施例可以包括模制加强层。 替代实施例包括用粘合剂层粘附到基底的表面的加强层。

公开(公告)号：US20250079399A1

公开(公告)日：2025-03-06

申请号：US18460918

申请日：2023-09-05

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Wilfred Gomes ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Nitin A. Deshpande ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498

Abstract: Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including an active region including a capacitor; and a metallization stack including a first conductive trace electrically coupled to a first conductor of the capacitor and a second conductive trace electrically coupled to a second conductor of the capacitor, wherein the first conductive trace and the second conductive trace are parallel to the first and second surfaces and exposed at the third surface; and a second IC die including a fourth surface, where the first conductive trace and the second conductive trace at the third surface of the first IC die are electrically coupled to the fourth surface of the second IC die by interconnects.

公开(公告)号：US20250079263A1

公开(公告)日：2025-03-06

申请号：US18460931

申请日：2023-09-05

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Debendra Mallik ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Ravindranath Vithal Mahajan ,  Abhishek A. Sharma

IPC: H01L23/473 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

Abstract: Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including a substrate with a microchannel, and a metallization stack with a conductive trace that is parallel to the first and second surfaces and exposed at the third surface; and a second IC die having a fourth surface, wherein the conductive trace exposed at the third surface of the first IC die is electrically coupled to the fourth surface of the second IC die by an interconnect.

公开(公告)号：US20250006643A1

公开(公告)日：2025-01-02

申请号：US18217049

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Ram Viswanath ,  Xavier Brun

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/373 ,  H01L23/498 ,  H01L25/065

Abstract: Microelectronic integrated circuit package structures include a package substrate with a first die over the package substrate, and a second die adjacent to the first die, such that first sides of the first die and the second die are on a thermal solution. A bridge structure is directly on a portion of each of second sides of the first and second dies, such that the second sides include integrated circuit contact structures. Bridge via structures couple the integrated circuit contact structures to the bridge structure.

公开(公告)号：US12142568B2

公开(公告)日：2024-11-12

申请号：US18139275

申请日：2023-04-25

Applicant: Intel Corporation

Inventor： Sanka Ganesan ,  Kevin McCarthy ,  Leigh M. Tribolet ,  Debendra Mallik ,  Ravindranath V. Mahajan ,  Robert L. Sankman

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

公开(公告)号：US12107042B2

公开(公告)日：2024-10-01

申请号：US17972340

申请日：2022-10-24

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L25/18

CPC classification number: H01L23/5226 ,  H01L23/5385 ,  H01L24/06 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/563 ,  H01L24/05 ,  H01L24/13 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20240222326A1

公开(公告)日：2024-07-04

申请号：US18148528

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Wilfred Gomes ,  Nisha Ananthakrishnan ,  Kemal Aygun ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma

IPC: H01L25/065 ,  H01L23/522 ,  H01L23/528 ,  H10B10/00 ,  H10B12/00 ,  H10B80/00

CPC classification number: H01L25/0655 ,  H01L23/5226 ,  H01L23/5283 ,  H10B10/12 ,  H10B12/37 ,  H10B80/00

Abstract: Embodiments of a microelectronic assembly include: a first integrated circuit (IC) die having a first memory circuit and a second memory circuit; a second IC die; a third IC die; and a package substrate. The first IC die is between the second IC die and the package substrate. The first IC die comprises: a first portion comprising a first active region and a first backend region in contact with the first active region; and a second portion comprising a second active region and a second backend region in contact with the second active region. The first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region comprises transistors that are larger than transistors in the second active region, and the first backend region comprises conductive traces that have a larger pitch than conductive traces in the second backend region.

公开(公告)号：US11984377B2

公开(公告)日：2024-05-14

申请号：US16831068

申请日：2020-03-26

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Je-Young Chang ,  Ram Viswanath ,  Elah Bozorg-Grayeli ,  Ahmad Al Mohammad

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/18 ,  H01L23/373 ,  H01L23/538

CPC classification number: H01L23/3675 ,  H01L21/4875 ,  H01L23/18 ,  H01L23/3735 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/1432 ,  H01L2924/1434

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.