Abstract:
It is an object of the present invention to provide a method and an apparatus for measuring a scattering intensity distribution capable of measuring a scattering intensity distribution in a reciprocal space in a short time. The method or apparatus for measuring a scattering intensity distribution causes X-rays emitted from an X-ray source (101) to be reflected by an X-ray optical element (102) so as to converge in the vicinity of a surface of a sample (SA), causes monochromatic X-rays condensed after passing through a plurality of optical paths to be incident on the sample at glancing angles (ω) that differ depending on the respective optical paths at a time in a state in which there is a correlation between an angle formed by each optical path of the monochromatic X-rays and a reference plane, and an angle formed by each optical path and a plane including the normal of the reference plane and an optical path located in the center of the respective optical paths, detects scattering intensities of the monochromatic X-rays scattered by the sample using a two-dimensional detector (103) and calculates a scattering intensity distribution in the reciprocal space based on the scattering intensity distribution detected by the two-dimensional detector and the correlation.
Abstract:
Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
Abstract:
An illumination optical unit includes a collector mirror which produces a polarization distribution that is applied to the first faceted optical element during the operation of the illumination optical unit. There are at least two first facet elements to which radiation having a differing polarization is applied. The first faceted optical element has at least one first state in which the normal vectors of the reflective surfaces of the first facet elements are selected so that a first predetermined polarization distribution results at the location of the object field during the operation of the illumination optical unit.
Abstract:
A method of manufacturing a mirror includes a first step of arranging, on a substrate, a shape adjusting layer having a layer thickness which changes by heat, a second step of arranging, on the shape adjusting layer, a reflection layer including a first layer, a second layer, and a barrier layer which is arranged between the first layer and the second layer, and prevents a diffusion of a material of the first layer and a material of the second layer, and a third step of bringing a shape of the reflection layer close to a target shape by changing a layer thickness profile of the shape adjusting layer after the second step, the third step including a process of partially annealing the shape adjusting layer.
Abstract:
A source-collector module for an extreme ultraviolet (EUV) lithography system, the module including a laser-produced plasma (LPP) that generates EUV radiation and a grazing-incidence collector (GIC) mirror arranged relative thereto and having an input end and an output end. The LPP is formed using an LPP target system wherein a pulsed laser beam travels on-axis through the GIC and is incident upon solid, moveable LPP target. The GIC mirror is arranged relative to the LPP to receive the EUV radiation therefrom at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. An example GIC mirror design is presented that includes a polynomial surface-figure correction to compensate for GIC shell thickness effects, thereby improve far-field imaging performance.
Abstract:
A deterioration of the collector performance in an extreme ultraviolet light source device due to a heat deformation of the collector mirror assembly is to be prevented. The collector mirror assembly used in the extreme ultraviolet light source device comprises a plurality of reflective shells 21 with different diameters which are shaped as ellipsoids of revolution or hyperboloids of revolution, wherein the reflective shells 21 are arranged in a nested shape and the ends thereof are held by a holding structure 22. A cooling channel, through which a cooling medium flows is mounted at the reflective shell 21 in the axial direction of the reflective shell on the face being the back side of the reflective surface. This cooling channel acts as a reinforcement material and is able to suppress a heat deformation of the reflective shell 21. By using molybdenum as the material for the reflective shells 21, the heat deformation can be suppressed even further, and by providing cooling channels in the holding structure 22, the collector mirror assembly can be cooled even more efficiently and a heat deformation thereof can be suppressed.
Abstract:
An X-ray system is arranged for providing X-ray exposure to a target volume. The aforesaid X-ray system comprises an X-ray source and at least one focusing lens. The provided exposure is distributed over a volume of the target in a substantially uniform manner.
Abstract:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
Abstract:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
Abstract:
A device for UV curing a coating or printed ink on an workpiece such as an optical fiber comprises dual elliptical reflectors arranged to have a co-located focus. The workpiece is centered at the co-located focus such that the dual elliptical reflectors are disposed on opposing sides of the workpiece. Two separate light sources are positioned at a second focus of each elliptical reflector, wherein light irradiated from the light sources is substantially concentrated onto the surface of the workpiece at the co-located focus.