Method and system for detecting radiation incorporating a hardened photocathode
    111.
    发明授权
    Method and system for detecting radiation incorporating a hardened photocathode 有权
    用于检测掺入硬化光电阴极的辐射的方法和系统

    公开(公告)号:US06303918B1

    公开(公告)日:2001-10-16

    申请号:US09383116

    申请日:1999-08-25

    Abstract: A method for detecting radiation comprising nine steps is disclosed. Step one, forming a detector having a photocathode (22) with a protective layer (22c) of cesium, oxygen and fluorine; a microchannel plate (MCP) (24); and an electron receiver (26). Step two, receiving radiation at the photocathode (22). Step three, photocathode (22) discharging electrons (34) in response to the received photons. Step four, accelerating discharged electrons (34) from the photocathode (22) to the input face (24a) of the microchannel plate (24). Step five, receiving the electrons (34) at the input face (24a) of the microchannel plate (24). Step six, generating a cascade of secondary emission electrons (36) in the microchannel plate (24) in response to the received electrons (34). Step seven, emitting the secondary emission electrons (36) from the output face (24b) of the microchannel plate (24). Step eight, receiving secondary emission electrons (36) at the electron receiver (26). Step nine, producing an output characteristic of the secondary emission electrons (36). A device for detecting radiation is disclosed. The device comprises a photocathode (22), a microchannel plate (24) and an electron receiver (26). The photocathode (22) is operable to receive radiation on an input side (22a) and to discharge electrons (34) from its output side (22b) in response. The output side (22b) of the photocathode (22) has a protective layer (22c) comprising cesium, oxygen and fluorine. The microchannel plate (24) serves to receive electrons (34) on its input face (24a) from the photocathode (22), to produce a cascade of secondary emission electrons (36) and to discharge those electrons (36) from its output face (24b). The electron receiver (26) is operable to receive secondary emissions electrons (36) from the microchannel plate (24) and to produce an output characteristic of those electrons (36).

    Abstract translation: 公开了一种用于检测辐射的方法,包括九个步骤。 步骤一,形成具有光电阴极(22)的检测器,其具有铯,氧和氟的保护层(22c); 微通道板(MCP)(24); 和电子接收器(26)。 步骤二,在光电阴极(22)处接收辐射。 步骤三,响应于接收到的光子,光电阴极(22)放电电子(34)。 步骤四,将放电电子(34)从光电阴极(22)加速到微通道板(24)的输入面(24a)。 步骤五,在微通道板(24)的输入面(24a)处接收电子(34)。 步骤6,响应于接收到的电子(34),在微通道板(24)中产生二次发射电子(36)的级联。 步骤七,从微通道板(24)的输出面(24b)发射二次发射电子(36)。 步骤八,在电子接收器(26)处接收二次发射电子(36)。 第九步,产生二次发射电子的输出特性(36)。 公开了一种用于检测辐射的装置。 该装置包括光电阴极(22),微通道板(24)和电子接收器(26)。 光电阴极(22)可操作以在输入侧(22a)上接收辐射并响应于从其输出侧(22b)放电电子(34)。 光电阴极(22)的输出侧(22b)具有包含铯,氧和氟的保护层(22c)。 微通道板(24)用于在其光电阴极(22)的输入面(24a)上接收电子(34),以产生级联的二次发射电子(36),并从其输出面 (24 <意大利

    Photocathode
    112.
    发明申请
    Photocathode 有权
    光电阴极

    公开(公告)号:US20010001226A1

    公开(公告)日:2001-05-17

    申请号:US09741826

    申请日:2000-12-22

    Inventor: Tokuaki Nihashi

    CPC classification number: H01J1/34 H01J43/08 H01J2201/3423 H01J2231/50021

    Abstract: A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.

    Abstract translation: 具有UV玻璃基板和由UV玻璃基板上设置的SiO 2层,GaAlN层,III-V族氮化物半导体层和AlN缓冲层构成的层叠体的光电阴极。 吸收红外线的紫外线玻璃基板可以通过光热进行高速热处理。 此外,对紫外线透明的紫外线玻璃基板,能够在发生光电转换的III-V族氮化物半导体层中引入紫外线。

    Photomultiplier having a photocathode comprised of semiconductor material
    115.
    发明授权
    Photomultiplier having a photocathode comprised of semiconductor material 失效
    具有由半导体材料构成的光电阴极的光电倍增管

    公开(公告)号:US5710435A

    公开(公告)日:1998-01-20

    申请号:US580057

    申请日:1995-12-20

    CPC classification number: H01J1/34 H01J43/08 H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时,形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面,并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时,光电子通过电场被加速到发射表面。 光电子在该电场加速下获得能量,并且在电子发射层中转移到更高能级的导带,并发射到真空中。

Patent Agency Ranking