Abstract:
A method for detecting radiation comprising nine steps is disclosed. Step one, forming a detector having a photocathode (22) with a protective layer (22c) of cesium, oxygen and fluorine; a microchannel plate (MCP) (24); and an electron receiver (26). Step two, receiving radiation at the photocathode (22). Step three, photocathode (22) discharging electrons (34) in response to the received photons. Step four, accelerating discharged electrons (34) from the photocathode (22) to the input face (24a) of the microchannel plate (24). Step five, receiving the electrons (34) at the input face (24a) of the microchannel plate (24). Step six, generating a cascade of secondary emission electrons (36) in the microchannel plate (24) in response to the received electrons (34). Step seven, emitting the secondary emission electrons (36) from the output face (24b) of the microchannel plate (24). Step eight, receiving secondary emission electrons (36) at the electron receiver (26). Step nine, producing an output characteristic of the secondary emission electrons (36). A device for detecting radiation is disclosed. The device comprises a photocathode (22), a microchannel plate (24) and an electron receiver (26). The photocathode (22) is operable to receive radiation on an input side (22a) and to discharge electrons (34) from its output side (22b) in response. The output side (22b) of the photocathode (22) has a protective layer (22c) comprising cesium, oxygen and fluorine. The microchannel plate (24) serves to receive electrons (34) on its input face (24a) from the photocathode (22), to produce a cascade of secondary emission electrons (36) and to discharge those electrons (36) from its output face (24b). The electron receiver (26) is operable to receive secondary emissions electrons (36) from the microchannel plate (24) and to produce an output characteristic of those electrons (36).
Abstract:
A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.
Abstract:
A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
Abstract:
A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
Abstract:
A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
Abstract:
A high performance reflection type photocathode for use in a photomultiplier tube is formed by sequentially depositing three layers on a substrate made of nickel. The first layer is made of either one of chromium, manganese and magnesium as a major component and is deposited over the substrate. The second layer is made of aluminum as a major component and is deposited over the first layer. The third layer is made of antimony and at least one kind of alkaline metals and is deposited over the second layer.