Abstract:
The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.
Abstract:
The equipment for the wet treatment of round semiconductor slices comprises a treatment tank containing a treatment liquid, a pair of parallel rollers with horizontal axis supported in a rotating manner near the bottom of the treatment tank and motor means for rotation of at least one of said rollers. For treatment of the slices they are positioned on the rollers side by side with virtually horizontal axis parallel to the axis of the rollers.
Abstract:
Method of parallel processing of multiple inference rules (R) organized in fuzzy sets or logical functions of multiple fuzzy sets comprising membership functions (I') defined in a so-called universe of discourse (U) and said inference rules (R) being configured essentially as IF-THEN rules with at least one antecedent preposition and at least one consequent implication and each preposition comprising at least one term (T) of comparison between membership functions (I') and a plurality of input data (I) and each term (T) being separated by logical operators (OL). The method comprises at least one phase of calculation of the weight (Ω) of each term (T) of the antecedent part of each fuzzy logic inference rule as the greatest value of the intersection between the set of input data (I) and the corresponding membership functions (I').
Abstract:
A filter architecture for high-resolution video applications of the type comprising at least one filter block (3) having a plurality of digital inputs (Pi, X) which receive through an interface (2) components (U, V, Y) of a television signal and some outputs (NR) through which to take the result of a filtering operation for noise associated with the television signal also comprises in the filter block (3) at least one interpolator block connected to said inputs and operating with fuzzy logic to execute a television signal scanning conversion to be presented on additional outputs (SRC) of the filter block (3).
Abstract:
A filter acting on digital image signals for apparatus of the video type comprises:
at least first and second circuit means (2) and (3) adapted to elect an image edge, each said circuit means comprising at least one inferential circuit (C1 and C2) operating on a fuzzy logic, which has at least first and second input terminals and at least one output terminal, and at least first and second comparison elements (S1,S2,S3,S4) each having first and second input terminals and at least one output terminal, said input terminals being intended for receiving discrete digital signals of an image.
The output terminals of the first and second comparison elements (S1 and S2) in the first circuit means (2) are respectively connected to the first and second input terminals of the inferential circuit included to said first circuit means, and the output terminals of the first and second comparison elements (S3 and S4) in the second circuit means (3) are respectively connected to the first and second input terminals of the inferential circuit included to said second circuit means.
Abstract:
A drive circuit for a field-effect transistor (MFET1) which has a drain terminal connected to the positive pole (+Vcc) of the power supply and a source terminal connected to a load (OUT). The circuit has circuit means for turning off the field-effect transistor (MFET1) which comprises a first transistor (M1) connected between the gate terminal of the field-effect transistor (MFET1) and the negative pole (GND) of the power supply. Said first transistor (MFET1) is driven by an operational amplifier (M3,M4,MR1,MR2,MR3) which has inverting and non-inverting terminals connected to the gate and source terminals of the field-effect transistor (MFET1) respectively.
Abstract:
A method for eliminating the bird's beak from selective oxidations of semiconductor electronic devices having a semiconductor substrate (1) which is covered by an oxide layer (2) covered, in turn, by a first layer (3) of nitride, and wherein at least one pit (7,11) is defined for growing an isolation region, comprises the sequential steps of,
selectively etching the oxide layer (2) within said pit (7) to define peripheral recesses (6,8) between the substrate (1) and the nitride; occluding said recesses (6,8) with nitride; and growing oxide in said pit (7) so as to form said isolation region contrasting the nitride portions (9,10) which occlude said recesses (6,8).