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公开(公告)号：JP3635507B2
公开(公告)日：2005-04-06
申请号：JP28281995
申请日：1995-10-31
Inventor： ダリオ・ブルーノ , ニコロ・マナレーシ , ビアジョ・ジャカローネ
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公开(公告)号：JP4020269B2
公开(公告)日：2007-12-12
申请号：JP3789496
申请日：1996-02-26
Inventor： ナターレ・アイエッロ
IPC: H01L21/8222 , H01L27/06 , H01L27/02 , H03K19/003
CPC classification number: H01L27/0248
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公开(公告)号：JP3703542B2
公开(公告)日：2005-10-05
申请号：JP27290595
申请日：1995-10-20
Inventor： ジュゼッペ・シッラ , ジョヴァンニ・ガッリ
IPC: H01L27/04 , H01L21/822 , H01L27/06 , H03F1/52 , H03K17/08
CPC classification number: H03F1/52
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4.发明授权Threshold voltage extracting method and circuit using the same 失效一种用于Spannungschwelleextraktierung和电路根据所述方法的工序
公开(公告)号：EP0720079B1
公开(公告)日：2004-09-29
申请号：EP94830595.8
申请日：1994-12-30
Applicant: CO.RI.M.ME.
Inventor： Bruno, Dario , Giacalone, Biagio , Manaresi, Nicolò , Gnudi, Antonio
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公开(公告)号：EP0684726B1
公开(公告)日：2003-10-08
申请号：EP94830197.3
申请日：1994-04-27
Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO , STMicroelectronics S.r.l.
Inventor： Mancuso, Massimo , Poluzzi, Rinaldo , Rizzotto, Gianguido
CPC classification number: H04N7/012 , H04N7/0132
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Patent Agency Ranking
公开(公告)号：EP0786858B1
公开(公告)日：2002-10-23
申请号：EP96830035.0
申请日：1996-01-26
Applicant: STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Inventor： Alini, Roberto , Bruccoleri, Melchiorre , Cosentino, Gaetano , Pisati, Valerio
CPC classification number: H03F3/3077
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7.发明授权An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers 失效一种集成电路与装置具有由Vbe的乘法器装置上的一定反向电压阈值和温度补偿装置
公开(公告)号：EP0810503B1
公开(公告)日：2001-12-19
申请号：EP96830276.0
申请日：1996-05-14
Inventor： Scaccianoce, Salvatore
CPC classification number: H01L27/0211 , H01L27/0652
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8.发明授权Method of manufacturing a semiconductor device with auto-aligned polycide gate 失效一种用于制造具有自对准多晶硅化物半导体器件的工艺
公开(公告)号：EP0749158B1
公开(公告)日：2001-10-31
申请号：EP95830249.9
申请日：1995-06-16
Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO , STMicroelectronics S.r.l.
Inventor： Santangelo, Antonello , Ferla, Giuseppe
IPC: H01L23/00 , H01L29/739 , H01L29/78 , H01L29/43 , H01L21/331
CPC classification number: H01L29/7802 , H01L29/49 , H01L29/66333 , H01L29/7395 , H01L2924/0002 , H01L2924/00
Abstract: An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a metal film deposited on the polycrystalline silicon (4) and on the oxide layer (10).
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公开(公告)号：EP0740260B1
公开(公告)日：2001-08-22
申请号：EP95830170.7
申请日：1995-04-28
Applicant: STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Inventor： Bruno, Dario , Poluzzi, Rinaldo , Manaresi, Nicolo , Franchi, Eleonora
IPC: G06G7/60
CPC classification number: G06N7/043
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10.发明授权
公开(公告)号：EP0746101B1
公开(公告)日：2001-08-08
申请号：EP95830230.9
申请日：1995-05-31
Applicant: STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Inventor： Gola, Alberto , Leone, Via Terrazzano, 67 , Fucili, Giona , Milazzo, Patrizia
IPC: H03K19/003 , H03K17/082
CPC classification number: H03K17/082 , H03K19/00315
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