公开(公告)号：US20150154746A1

公开(公告)日：2015-06-04

申请号：US14578317

申请日：2014-12-19

Applicant: KLA-Tencor Technologies Corporation

Inventor： Khurram Zafar ,  Sagar Kekare ,  Ellis Chang ,  Allen Park ,  Peter Rose

IPC: G06T7/00

CPC classification number: G06T7/0006 ,  G03F1/84 ,  G06F17/5081 ,  G06T7/0008 ,  G06T2207/20076 ,  G06T2207/30148

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract translation: 提供了与检测数据结合使用设计数据的各种方法和系统。 用于对在晶片上检测到的缺陷进行合并的计算机实现的方法包括将设计数据的部分靠近设计数据空间中的缺陷的位置进行比较。 该方法还包括基于比较步骤的结果确定部分中的设计数据是否至少相似。 此外，该方法包括将组中的缺陷合并成使得设计数据中靠近每个组中的缺陷的位置的部分至少相似。 该方法还包括将合并步骤的结果存储在存储介质中。

公开(公告)号：US20040257571A1

公开(公告)日：2004-12-23

申请号：US10785723

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Mark Ghinovker ,  John Fielden ,  Noah Bareket

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a first optical signal is measured using a first ellipsometer or a first reflectometer and a second optical signal is measured using a second ellipsometer or a second reflectometer. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured first and second optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.

Abstract translation: 公开了一种确定多层样本的两层之间的覆盖误差的方法。 对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标中的每一个，使用第一椭偏仪或第一反射计和第二光学器件测量第一光信号 使用第二椭偏仪或第二反射计测量信号。 在第一和第二结构之间有预定义的偏移。 通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的测量的第一和第二光学信号，在第一和第二结构之间确定覆盖误差。

公开(公告)号：US20040235206A1

公开(公告)日：2004-11-25

申请号：US10848631

申请日：2004-05-18

Applicant: KLA-Tencor Technologies Corporation

Inventor： Lionel Kuhlmann ,  Jianbo Gao ,  Mark C. Sweeney

IPC: H01L021/66

CPC classification number: G06T7/0004 ,  G01B11/303 ,  G01N21/9501 ,  G06T5/50 ,  G06T7/11 ,  G06T2207/30148

Abstract: Disclosed are methods and apparatus for analyzing the Haze data provided by an optical inspection tool. The Haze data is analyzed so as to detect defects associated with the specimen surface. In general, the Haze data is first conditioned so that background noise which corresponds to low frequency variation on the specimen is separated or removed from the Haze data prior to analysis of such Haze data. In a specific embodiment, low frequency variations in the specimen surface are characterized, in effect, as an optical surface upon which an incident beam is directed. In one example, the Haze data that corresponds to the specimen surface is characterized with a polynomial equation, such as a Zernike equation. In other words, a polynomial equation is fit to the low frequency or background noise of the Haze data. The Haze data that conforms to this resulting polynomial equation is then subtracted from the original Haze data to result in residual data, where slow variations in surface roughness are subtracted out, leaving possible defect information in the residual Haze data. This residual Haze data may then be analyzed to determine whether the specimen contains a defect. Techniques for enhancing detection of defects by analyzing the residual data are also disclosed. Preferably, techniques for calibrating the resulting residual data so that it is normalized between different inspection tools are also provided.

Abstract translation: 公开了用于分析由光学检查工具提供的雾度数据的方法和装置。 分析雾度数据，以便检测与样品表面相关的缺陷。 通常，首先对雾度数据进行调节，使得在分析这样的雾度数据之前，将相应于样本上的低频变化的背景噪声从雾度数据中分离或去除。 在具体实施例中，试样表面的低频变化实际上表征为入射光束被引导到的光学表面。 在一个示例中，对应于样本表面的雾度数据用诸如Zernike方程的多项式方程表征。 换句话说，多项式方程适合于雾度数据的低频或背景噪声。 然后从原始雾度数据中减去符合该结果的多项式方程式的雾度数据，得到残差数据，减去表面粗糙度的较慢变化，从而留下残余雾点数据中的可能的缺陷信息。 然后可以分析该残留雾度数据以确定样本是否包含缺陷。 还公开了通过分析残留数据来增强缺陷检测的技术。 优选地，还提供了用于校准所得残留数据以使其在不同检查工具之间被归一化的技术。

公开(公告)号：US20040233443A1

公开(公告)日：2004-11-25

申请号：US10785732

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.

Abstract translation: Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调 或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

公开(公告)号：US20040233441A1

公开(公告)日：2004-11-25

申请号：US10785430

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Mark Ghinovker ,  Christopher F. Bevis ,  Noam Knoll ,  Moshe Baruch

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. A sample having a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer is provided. There are predefined offsets between the first and second structures. Using a scatterometry overlay metrology, scatterometry overlay data is obtained from a first set of the periodic targets based on one or more measured optical signals from the first target set on the sample. Using an imaging overlay metrology, imaging overlay data is obtained from a second set of the periodic targets based on one or more image(s) from the second target set on the sample.

Abstract translation: 公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。 提供具有多个周期性靶的样品，每个周期性靶在第一层中具有第一结构，在第二层中具有第二结构。 在第一和第二结构之间有预定义的偏移。 使用散射测绘重叠测量，基于来自样品上的第一目标组的一个或多个测量光信号，从第一组周期性目标获得散点测绘覆盖数据。 使用成像覆盖度量，基于来自样品上的第二目标集的一个或多个图像，从第二组周期性目标获得成像覆盖数据。

公开(公告)号：US20040156540A1

公开(公告)日：2004-08-12

申请号：US10713628

申请日：2003-11-13

Applicant: KLA-Tencor Technologies, Corporation

Inventor： Lisheng Gao ,  Bo Magluyan ,  Jianxin Zhang ,  Kevin Yeung ,  Kenong Wu ,  Tong Huang

IPC: G06K009/00 ,  G06K009/62

CPC classification number: G06K9/6253 ,  G06T7/0004

Abstract: Disclosed are methods and apparatus for efficiently setting up and maintaining a defect classification system. In general terms, the setup procedure optionally includes automatically grouping a set of provided defects (e.g., defect images) and presenting a representative set from each defect group to the user for classification. Alternatively, a representative set from the whole defect set may be presented to the user for classification without first grouping the defects into groups. The representative set does not include all of the defects and is selected to optimize manual classification efficiency. After the initial manual classification of the representative defects, the setup procedure includes an automatic procedure for classifying the non-reviewed or unclassified defects based on the manual class codes from the user-reviewed defects. After the automatic classification operation, the user may also be presented with defects from each class which may require re-classification. In particular embodiments, the user is iteratively presented with defects which have classifications that are suspect, which are near classification boundaries, or have classifications that have a low confidence level until each class is pure or contains a same type of defect classes as assigned by the user. After all the defects are manually classified through the above procedure, the classifier training set may be created automatically. New type of defects may be detected by using the existing training defects or the classified defects as the reference defects. The classifier maintenance may be done by merging existing classifiers together, adding new type of defects into the classifier, adding new boundary defects into the classifier, and removing redundant defects from the classifier.

Abstract translation: 公开了用于有效地建立和维护缺陷分类系统的方法和装置。 一般来说，设置过程可选地包括自动地对一组所提供的缺陷（例如，缺陷图像）进行分组，并将来自每个缺陷组的代表集合给用户进行分类。 或者，可以将来自整个缺陷集的代表集合呈现给用户进行分类，而无需首先将缺陷分组成组。 代表集不包括所有缺陷，并被选择以优化手动分类效率。 在对代表性缺陷进行初步手动分类后，安装步骤包括根据用户审查缺陷的手册类代码分类未经审查或未分类的缺陷的自动程序。 在自动分类操作之后，用户也可能会出现每个类别可能需要重新分类的缺陷。 在特定实施例中，用户被迭代地呈现具有可疑的分类的缺陷，其接近分类边界，或者具有低置信度水平的分类，直到每个类是纯的或包含由所分配的相同类型的缺陷类别 用户。 在通过上述过程手动分类所有缺陷之后，可以自动创建分类器训练集。 可以通过使用现有的训练缺陷或分类的缺陷作为参考缺陷来检测新的缺陷。 分类器维护可以通过将现有分类器合并在一起，将新类型的缺陷添加到分类器中，在分类器中添加新的边界缺陷，并从分类器中删除冗余缺陷。

公开(公告)号：US20040043621A1

公开(公告)日：2004-03-04

申请号：US10420429

申请日：2003-04-21

Applicant: KLA-Tencor Technologies Corporation, A Corporation of California

Inventor： Mehran Nasser-Ghodsi

IPC: H01L021/461

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/244 ,  H01J2237/30466

Abstract: Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

Abstract translation: 描述了在半导体干蚀刻工艺期间检测端点的技术。 本发明的干蚀刻方法包括使用反应性材料和带电粒子束（例如电子束）的组合。 在另一个实施例中，使用光子束来促进蚀刻工艺。 端点检测技术包括监测二次电子和反向散射电子的发射水平以及样品内的电流。 根据给予每个这些参数的重量，当这些参数的值相对于这些值的初始值改变多于一定百分比时，将识别端点。

公开(公告)号：US20040041095A1

公开(公告)日：2004-03-04

申请号：US10272467

申请日：2002-10-08

Applicant: KLA Tencor Technologies Corporation

Inventor： Mehran Nasser-Ghodsi ,  Michael Cull

IPC: G21K007/00 ,  G01N023/00

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/18 ,  H01J2237/244 ,  H01J2237/245 ,  H01J2237/30466

Abstract: Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Abstract translation: 方法和装置正在提供检验试样。 调整电子束以在扫描目标区域时引起二次电子发射。 引入反应性物质以从扫描靶中蚀刻和去除材料和杂质。 剩余部件被抽空。 在一个示例中，使用激光器照射和面积以帮助去除具有差的蒸汽压力的残余组分。

公开(公告)号：US20040027688A1

公开(公告)日：2004-02-12

申请号：US10072469

申请日：2002-02-06

Applicant: KLA-Tencor Technologies Corporation

Inventor： Steven R. Lange

IPC: G02B015/14 ,  G02B017/00

CPC classification number: G02B17/086 ,  G02B17/0808 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/0016 ,  G02B21/025 ,  G02B21/04 ,  G02B21/18 ,  G02B21/367

Abstract: Techniques for utilizing a microscope inspection system capable of inspecting specimens at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.

Abstract translation: 描述了利用能够以高生产率检查试样的显微镜检查系统的技术。 检查系统通过利用多于一个的检测器阵列和大的视场扫描半导体晶片的表面来实现更高的吞吐率。 显微镜检查系统也具有高放大能力，高数值孔径和大视场。 通过使用多于一个的检测器阵列，可以在横跨半导体晶片的每个扫描条纹期间检查晶片的更多的表面积。 显微镜检查系统被配置为具有更大的视野，使得可以适当地利用多个检测器阵列。 此外，使用反射和/或折射表面的特殊布置，以便将检测器阵列装配在检查系统的物理限制内。

公开(公告)号：US20040016897A1

公开(公告)日：2004-01-29

申请号：US10289005

申请日：2002-11-05

Applicant: KLA-Tencor Technologies Corporation

Inventor： Stan Stokowski ,  Damon F. Kvamme ,  Chun Shen Lee ,  Donald W. Pettibone

IPC: G01N021/88 ,  H01J005/16

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G01N2021/95676

Abstract: Provided are apparatus and methods for detecting phase defects. The invention relies generally on the distortion of light as it passes through defects in phase shift masks to detect these defects. Light traveling through a defect, such as a bump in an etched area will travel at a different angle than light traveling through air. In order to enhance the signals generated from the defects, the invention in several embodiments provides a multiple element detector having at least four elements, arranged in a radially symmetric configuration. Individual elements of the detector are selected to form a differential signal based on the configuration of pattern lines in the area proximate to the defect. The resulting differential signal is used to generate an image signal and to identify phase defects.