Abstract:
PROBLEM TO BE SOLVED: To provide an improved technique for initially acquiring a synchronous code group and frame alignment data, using a UMTS-FDD receiver. SOLUTION: For completing a step 2 process, a different synchronous channel is used. In more detail, a complete synchronous channel correlator is used for a demodulation such that it correlates received signals in known time slots for coupling a primary synchronous code with a plurality of secondary synchronous codes each. The coupled correlation provides a step 2 performance improved in the view of the acquisition time and the signal to noise ratio. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a technique for improving command queue rearranging process with the load of processor resource decreased. SOLUTION: This invention provides a hardware command queue with a memory device for a mass memory system. Plural entries are demarcated within the memory device, at least several among which are active entries. Among the active entries, at lease several are associated with pending access commands with at least one entry as a head entry associated with the active command in operation. Physical target position is stored in each active entry with the calculated servo distance stored in each active entry. A link list including a pointer for defining execution sequence is stored together with the command queue. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a circuit and a method to detect a phase of a servo signal so as to allow a servo circuit to compensate for a reversed-connected head. SOLUTION: A detector recovers servo data from a servo signal generated by a read/write head and determines a head-connection polarity from the recovered servo data. Such a detector allows the servo circuit to compensate for a reversed-connected read/write head, and thus allows a manufacturer to forego time-consuming and costly testing to determine whether the head is correctly connected to the servo circuit.
Abstract:
PROBLEM TO BE SOLVED: To provide an improved data storage medium, particularly a data- storage disk having a few or no spin-up wedges. SOLUTION: This data-storage disk has a disk sector for storing data and a servo wedge located at the beginning of the sector. The servo wedge identifies the sector in conjunction with both an initial positioning of a read-write head and a data read and write operation. By using a servo wedge to provide both an initial head position on disk spin up and a head position during a read or write operation, one can increase a disk's data-storage capacity by reducing the number of, or altogether eliminating, spin-up wedges. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a technology for reducing a soft error in a dynamic memory device. SOLUTION: This memory device is provided with a dual port memory equipped with a first port corresponding to an externally started memory access operation and a second port for dealing with the memory access operation related with an error check and error correcting operation. An error module connected to the second port of the dual port memory performs an error check operation with respect to a word read from the dual port memory. An error controller connected to the error module controls the error module to perform the error check operation with respect to each word successively read from the dual port memory through the second port. The error check operation is performed substantially in parallel with the externally started memory access operation to be performed by using the first port of the dual port memory. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To prevent leakage of charge between a semiconducting channel and a substrate in a strained silicon FinFET device.SOLUTION: By inserting an insulating layer between the channel (fin) and the substrate, the fin is isolated from the substrate both physically and electrically. To form the isolated FinFET device, an array of bi-layer fins is grown epitaxially from the silicon substrate, between nitride columns that provide localized insulation between adjacent fins. Then, the lower fin layer can be removed while leaving the upper fin layer, thus yielding an interdigitated array of nitride columns and semiconducting fins suspended above the silicon surface. A resulting gap underneath the upper fin layer can then be filled in with oxide to isolate the array of fin channels from the substrate.