公开(公告)号：JP2014078715A

公开(公告)日：2014-05-01

申请号：JP2013210896

申请日：2013-10-08

Applicant: St Microelectron Inc ,  エスティーマイクロエレクトロニクス,インコーポレイテッドSTMicroelectronics, Inc. ,  Internatl Business Machines Corp ,  インターナショナル ビジネス マシーンズ コーポレイションInternational Business Machines Corporation

Inventor： NICOLAS LOUBET ,  LIU QING ,  PONOTH SHOM

IPC: H01L29/786 ,  H01L21/28 ,  H01L21/336 ,  H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12

CPC classification number: H01L21/76283 ,  H01L21/31111 ,  H01L21/76232 ,  H01L21/84

Abstract: PROBLEM TO BE SOLVED: To provide a technology for avoiding short-circuiting relating to contact to a substrate in a SOI integrated circuit.SOLUTION: A separate trench is etched through an active silicon layer at an upper side of an embedded oxide film on a substrate into the substrate and through any pad dielectric substance on the active silicon layer. A protrusion into the separation trench is formed in a lateral distance where lateral epitaxial growth of the active silicon layer is at least about 5 nm, and a portion of the separation trench around the protrusion is filled with a dielectric substance. A projective source/drain region is formed on the portion of the active silicon layer including the dielectric substance. As a result, mismatch contact passing around an end portion of the projective source/drain region is kept isolated from a sidewall of the substrate within the separation trench.

Abstract translation: 要解决的问题：提供一种用于避免与SOI集成电路中的衬底接触相关的短路的技术。解决方案：通过在衬底上的嵌入式氧化物膜的上侧的活性硅层蚀刻单独的沟槽 通过有源硅层上的任何焊盘介质物质进入衬底。 形成分离沟槽的突出部分的横向距离，其中活性硅层的横向外延生长至少约5nm，并且突出部分周围的分隔槽的一部分填充有介电物质。 在包括电介质的活性硅层的部分上形成投影源/漏区。 结果，穿过投影源极/漏极区域的端部的失配接触保持与分离沟槽内的衬底的侧壁隔离。

公开(公告)号：JP2014060388A

公开(公告)日：2014-04-03

申请号：JP2013171341

申请日：2013-08-21

Applicant: St Microelectron Inc ,  エスティーマイクロエレクトロニクス,インコーポレイテッドSTMicroelectronics, Inc.

Inventor： ZHANG JOHN H

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/67219 ,  H01L21/67167 ,  H01L21/67184

Abstract: PROBLEM TO BE SOLVED: To provide a technique for reducing the queue time (latency) of a semiconductor device going through a manufacturing process.SOLUTION: An integrated tool and a method for reducing the defects when manufacturing a semiconductor device, by reducing the queue time during the period of manufacturing process, are provided. The integrated tool may include at least one polishing tool having at least one polishing module, and at least one deposition tool having at least one deposition chamber. At least one pump down chamber may connect the polishing tool with the deposition tool. The at least one pump down chamber includes a passage through which the semiconductor device is passed. Defects in the semiconductor device are reduced by reducing the queue time in various stages of a manufacturing process.

Abstract translation: 要解决的问题：提供一种用于减少通过制造过程的半导体器件的队列时间（等待时间）的技术。解决方案：通过减少队列时间来减少制造半导体器件时的缺陷的集成工具和方法 在制造过程中提供。 该集成工具可以包括至少一个具有至少一个抛光模块的抛光工具，以及至少一个具有至少一个沉积室的沉积工具。 至少一个抽油室可以将抛光工具与沉积工具连接。 所述至少一个泵送室包括半导体器件通过的通道。 通过在制造过程的各个阶段减少队列时间来减少半导体器件中的缺陷。

公开(公告)号：JP2014042022A

公开(公告)日：2014-03-06

申请号：JP2013165436

申请日：2013-08-08

Applicant: St Microelectron Inc ,  エスティーマイクロエレクトロニクス,インコーポレイテッドSTMicroelectronics, Inc. ,  Internatl Business Machines Corp ,  インターナショナル ビジネス マシーンズ コーポレイションInternational Business Machines Corporation ,  Commissariat A I Energie Atomique Tet Aux Energies Alternatives ,  コミサリアト ア レネルジ アトミーク エ オ ゼネルジ アルタナティーブCommissariat a l Energie Atomique et aux Energies Alternatives

Inventor： LIU QING ,  NICOLAS LOUBET ,  PRASANNA KHARE ,  PONOTH SHOM ,  MAUD VINET ,  BRUCE DORIS

IPC: H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L29/786

CPC classification number: H01L21/76232 ,  H01L29/66772 ,  H01L29/78654

Abstract: PROBLEM TO BE SOLVED: To provide an electronic apparatus capable of improving interface properties between a shallow trench isolation (STI) region and a corresponding semiconductor device, and a method for manufacturing the same.SOLUTION: An electronic apparatus can comprise a substrate, a buried type oxide (BOX) layer on the substrate, at least one of semiconductor device on the BOX layer, and at least one of STI region adjacent to at least one of semiconductor device and in the substrate. At least one of STI region can comprise an oxide layer defining a sidewall surface of the substrate and lining a bottom part of the sidewall surface, a nitride layer lining an upper part of the sidewall surface above the bottom part, and an insulating material in the nitride layer and the oxide layer.

Abstract translation: 要解决的问题：提供一种能够改善浅沟槽隔离（STI）区域和对应的半导体器件之间的界面特性的电子设备及其制造方法。解决方案：电子设备可以包括衬底，埋置 氧化物（BOX）层，BOX层上的半导体器件中的至少一个以及与半导体器件和衬底中的至少一个相邻的STI区域中的至少一个。 STI区域中的至少一个可以包括限定衬底的侧壁表面并且衬里侧壁表面的底部的氧化物层，衬在底部部分上方的侧壁表面的上部的氮化物层以及衬底中的绝缘材料 氮化物层和氧化物层。

公开(公告)号：JPH11206177A

公开(公告)日：1999-07-30

申请号：JP30258398

申请日：1998-10-23

Applicant: ST MICROELECTRON INC

Inventor： MENEGOLI PAOLO

IPC: G05B11/18 ,  H02P6/00 ,  H02P6/08 ,  H02P6/18 ,  H03F3/30 ,  H03F3/45 ,  H03F3/72

Abstract: PROBLEM TO BE SOLVED: To enable quick switching from a pulse width modulation mode to a linear control mode with high reliability, by installing a disable circuit which makes a voltage bias terminal charge a capacitor or connects the terminal with a supply source for discharge. SOLUTION: A circuit 50 has a frequency lock loop or a phase lock loop circuit 52 which respond to a zero-cross signal from a floating coil and supply pulses to a driver. The phase lock loop 52 supplies a signal whose frequency depends on the final RPM target to a motor. The phase lock loop 52 supplies pluses to a first input terminal of a comparater 54 and a first input terminal of a mutual conductance operational amplifier 58. Second input terminals of the comparater 54 and the transconductance operational amplifier 58 are connected with the output terminal of a detection buffer amplifier 68. The comparater 54 has an output terminal connected with the input terminal of a multiplexer MUXH 56.

公开(公告)号：JPH11149605A

公开(公告)日：1999-06-02

申请号：JP26015498

申请日：1998-09-14

Applicant: ST MICROELECTRON INC

Inventor： AXEL ALLEGRET DE LA SJORLES ,  ALBINO PIDUTTI ,  PAKRISWAMI ELANGO

IPC: G11B5/09

Abstract: PROBLEM TO BE SOLVED: To quickly drive the coil of a write head by connecting transistors passing additional currents parallely with lower side transistors constituting an H dridge driving the coil of the write head and making the leading edge of the pulse of a coil current overshoot temporarily. SOLUTION: Additional transistors 60, 62 receive inverted input signals of signals being on input lines 51, 52 via variable capacitors 64, 66 to be switched simultaneously with lower side transistors 47, 49 to pass additional currents with respect to a coil 50. The additional currents by ways of the transistors 60, 62 do not receive the restriction of the Miller current of a reference current source 70. Then, the current of the coil 50 is made to overshoot temporarily by setting the variable capacitors 64, 66 in proper ratios with respect to variable capacitors 54, 56 and passing the additional currents by ways of the transistor 60, 62 only in parts of desired ratios during desired transition time by the lower side transistors 47, 49.

公开(公告)号：JPH11149604A

公开(公告)日：1999-06-02

申请号：JP26003098

申请日：1998-09-14

Applicant: ST MICROELECTRON INC

Inventor： ALBINO PIDUTTI ,  AXEL ALLEGRET DE LA SJORLES ,  PAKRISWAMI ELANGO

IPC: G11B5/09

Abstract: PROBLEM TO BE SOLVED: To quickly drive the coil of a write head being an inductive load by applying currents into gates of lower side transistors constituting an H bridge circuit driving the coil of the write head, via boost capacitors. SOLUTION: Boost capacitor circuits 40, 41 consisting of respective pairs of transistors 43, 44 and 46, 47 are respectively connected to gates of transistor 13, 15 via boost capacitors 50, 52. Here, capacitances of the boost capacitors are set so as to be respectively same as gate-to-source capacitances of the transistors 13, 15. Then, the transistors 13, 15 are switched in an H bridged coil driving circuit 20, for example, the transistors 13, 15 are made to be in conduction states. In this process, when the upper side of the capacitor 50 is switched from the ground to a Vcc by way of the MOS transistor 43, current is applied into the gate of the transistor 13 via the capacitor 50.

公开(公告)号：JPH11123186A

公开(公告)日：1999-05-11

申请号：JP18724898

申请日：1998-07-02

Applicant: ST MICROELECTRON INC

Inventor： KALNITSKY ALEXANDER ,  KRAMER ALAN

IPC: A61B5/117 ,  G01B7/28 ,  G06K9/00 ,  G06T1/00 ,  G06T7/00

Abstract: PROBLEM TO BE SOLVED: To prevent the contamination of a sensor array by projecting an IC array toward the surface of a package top part so as to cover/protect with a flexible membrane with a low dielectric constant. SOLUTION: An amplifier 13 for inverting a low power signal is provided for all the cells constituting an array to connect a terminal 21, a capacitor 20 and a metallic capacitor plate 24 to the side of its input terminal 6. A metallic capacitor plate 23 is connected to a terminal 17 to be an output terminal. These plates 23 and 24 are covered with a thin dielectric layer 25 of a low dielectric constant to form an active array surface on its upper-side horizontal surface 125 to bring the skin surface 18 of a finger to detect a finger print into physical contact. The layer 25 can cover the whole surface of the upper side part of an IC device surrounding the array and individual cells. The array can be protected by the layer of this constitution.

公开(公告)号：JPH1155989A

公开(公告)日：1999-02-26

申请号：JP16715398

申请日：1998-06-15

Applicant: ST MICROELECTRON INC

Inventor： BRAMBILLA MASSIMILIANO ,  NGUYEN CHINH DAC ,  LEE EUGENE C

IPC: G11B19/22 ,  H02P6/24

Abstract: PROBLEM TO BE SOLVED: To completely brake a spindle motor, by generating a brake signal when a power supply signal represents that a voltage supply source is insufficient and a voltage at a filter capacitor is a threshold value or less, and braking the motor. SOLUTION: When a voltage supply source VSUPP is completed, a rotor continues rotating for inertial mass and generates a counter-EMF voltage. This counter-EMF voltage is applied to a filter capacitor 58, and the voltage across the capacitor 58 is maintained. A voltage across the capacitor 58 is dropped as the rotor is decelerated due to a frictional effect. And, if the voltage is lowered to a input threshold value or less, a timing circuit 100 supplies a logic '1' to its output terminal and starts braking. Thus, a delay occurs between the end of the voltage VSUPP and braking of a spindle motor 32. Hence, since the motor 32 is dynamically braked after the rotor is decelerated, it can be safely braked.

公开(公告)号：JPH10334405A

公开(公告)日：1998-12-18

申请号：JP12475798

申请日：1998-05-07

Applicant: ST MICROELECTRON INC

Inventor： AXEL ALLEGRET DE LA SJORLES

IPC: G11B5/012 ,  G11B5/02 ,  G11B5/09 ,  G11B5/127 ,  G11B19/04

Abstract: PROBLEM TO BE SOLVED: To make the inductance of the read/write head programmable by possessing a 1st inductive section and a 2nd inductive section, combining them in parallel in response to write operation and combining them in series in response to read operation. SOLUTION: The two inductive sections 40 and 42 are traversely connected by a switch 44, while a control element is connected to a control signal R/W-45. When the 1st logic state, i.e., the low state exists on the R/W-45, disk drive 100 is under the write operation the switch 44 is closed, and the 1st inductive section 40 and the 2nd inductive section 42 are connected in parallel. That is, the inductance of the read/write head 15 is equalized to L/4 during a period of the write operation. When the RAW-45 is in the 2nd logic stae i.e., the high state while the disk drive 100 is under the read operation, the switch 44 is in the open state, and the 1st inductive section 40 becomes in the series state with the 2nd inductive section 42, and the inductance is equalized to L.

公开(公告)号：JPH10331628A

公开(公告)日：1998-12-15

申请号：JP14865998

申请日：1998-05-29

Applicant: ST MICROELECTRON INC

Inventor： SWANSON DAVID FRANK ,  ANDERSON STEPHEN WAYNE

IPC: F02N11/08 ,  F01N3/20 ,  F01N3/24 ,  F01N9/00 ,  H02J7/14

Abstract: PROBLEM TO BE SOLVED: To heat a catalyst converter early and decrease exhaust emission by carrying large current through the heating element of the catalyst converter via a rapid heating route with a catalyst switch for a prescribed period at the time of cold-starting an engine. SOLUTION: At the time of starting an engine, a lamp input 155 is made an L-level with a control module 130 to decrease the regulating voltage setting point of the voltage regulator 150 of a generator 170 and engine load torque. The relay single-pole double-throw switch contact 111 of an electric heating catalyst power switch 110 is connected to a heating element in an electric heating catalyst 120. The voltage regulator 150 is controlled so as to make the lamp input 155 an L-level with the control module 130, and a generator rotor field winding 190 is energized completely, by which the command of the full output of the generator 170 is given, and the increased voltage is carried through the electric heating catalyst 120 to heat it promptly.