公开(公告)号：KR1020040056214A

公开(公告)日：2004-06-30

申请号：KR1020020082786

申请日：2002-12-23

Applicant: 재단법인 포항산업과학연구원

Inventor： 정우철 ,  김광일 ,  김영덕 ,  김흥락

IPC: G01N27/407

Abstract: PURPOSE: A gas sensor structure including a diamond film and a method for measuring gas by using the same are provided to effectively detect gas for a long period of time. CONSTITUTION: A diamond film gas sensor structure includes a plurality of diamond film detection layers(12), a reference sensor(14), a motor driving section(30), and a control unit. The diamond film detection layers(12) are aligned on an upper surface of a silicon wafer. The reference sensor generates a predetermined standard resistant rate. The motor driving section(30) drives the silicon wafer. The control unit measures a resistant rate of the diamond film detection layers(12) and operates the motor driving section(30). The control unit compares the resistance rate of the diamond film detection layers(12) with the standard resistant rate of the reference sensor.

Abstract translation: 目的：提供一种包括金刚石膜的气体传感器结构和使用该气体传感器的气体测量方法，以有效地长时间地检测气体。 构成：金刚石膜气体传感器结构包括多个金刚石膜检测层（12），参考传感器（14），马达驱动部分（30）和控制单元。 金刚石膜检测层（12）在硅晶片的上表面上排列。 基准传感器产生预定的标准电阻率。 马达驱动部（30）驱动硅晶片。 控制单元测量金刚石膜检测层（12）的耐受速率并操作电机驱动部分（30）。 控制单元将金刚石膜检测层（12）的电阻率与参考传感器的标准电阻率进行比较。

公开(公告)号：KR1020040056209A

公开(公告)日：2004-06-30

申请号：KR1020020082780

申请日：2002-12-23

Applicant: 재단법인 포항산업과학연구원

Inventor： 정재인 ,  정우철 ,  정창영

IPC: C23C14/35

CPC classification number: H01J37/32669 ,  H01J37/3405 ,  H01J37/3435 ,  H01J37/3461

Abstract: PURPOSE: A magnetron sputtering evaporation source having high evaporation rate is provided which improves cooling efficiency through change of cooling method, improves evaporation ratio and target efficiency by changing intensity and shape of a line of magnetic force and enables sputtering to be performed even at high vacuum. CONSTITUTION: In a magnetron sputtering evaporation source comprising a target(17) that is a material to be evaporated, a target holder(14) for supporting the target, and a plurality of permanent magnets(11,11',11") for forming a line of magnetic force(18) on the surface of the target, the magnetron sputtering evaporation source comprises a magnetic substance disk(16) for enlarging intensity of the line of magnetic force as making the line of magnetic force in a flat shape; and a cooling water line(13) installed with being contacted with the inner circumferential surface of the target holder to cool the target holder, wherein the magnetic substance disk is pure iron, wherein the magnetic substance disk is positioned between the respective permanent magnets, and wherein the magnetic substance disk is positioned in the target holder.

Abstract translation: 目的：提供具有高蒸发速率的磁控溅射蒸发源，其通过改变冷却方法提高冷却效率，通过改变磁力线的强度和形状来改善蒸发比和目标效率，并且甚至在高真空下也能进行溅射 。 构成：在包括作为待蒸发材料的靶（17）的磁控溅射蒸发源中，用于支撑靶的靶保持器（14）和用于形成的多个永久磁铁（11,11'，11“） 在靶的表面上的磁力线（18），磁控管溅射蒸发源包括磁性体盘（16），用于在使磁力线成扁平形状时增大磁力线的强度;以及 冷却水管线（13），其安装成与所述目标保持器的内周面接触以冷却所述目标保持器，其中所述磁性物质盘是纯铁，其中所述磁性物质盘位于各个永磁体之间，并且其中 磁性物质盘定位在目标保持器中。

公开(公告)号：KR1020040020354A

公开(公告)日：2004-03-09

申请号：KR1020020051949

申请日：2002-08-30

Applicant: 재단법인 포항산업과학연구원

Inventor： 정우철

IPC: G01N27/72

Abstract: PURPOSE: A pickup device for detecting a metallic member by using a Hall sensor is provided to prevent electronic noise and to improve productivity by reducing malfunction of the pickup device. CONSTITUTION: A pickup device is horizontally installed over a conveyer in order to effectively detect a metallic member. The pickup device includes a Hall device(36) and an excite coil(33) which is coaxially aligned with respect to the HALL device(36) at a peripheral portion of the Hall device(36). The Hall device(36) is driven by a static current source. The excite coil(33) is driven by a power source based on a signal generated from a pulse generator. In order to measure a value of a secondary magnetic field, a ferro magnetic member is attached to a rear surface of the HALL device(36).

Abstract translation: 目的：提供一种用于通过使用霍尔传感器来检测金属构件的拾取装置，以防止电子噪声并通过减少拾取装置的故障来提高生产率。 构成：拾取装置水平地安装在输送机上，以有效地检测金属构件。 拾取装置包括在霍尔装置（36）的周边部分处相对于HALL装置（36）同轴对准的霍尔装置（36）和激励线圈（33）。 霍尔器件（36）由静态电流源驱动。 基于从脉冲发生器产生的信号，激励线圈（33）由电源驱动。 为了测量次级磁场的值，将铁磁部件附着到HALL装置（36）的后表面。

公开(公告)号：KR1020040020347A

公开(公告)日：2004-03-09

申请号：KR1020020051941

申请日：2002-08-30

Applicant: 재단법인 포항산업과학연구원

Inventor： 정우철 ,  김흥락 ,  김영덕

IPC: G01N27/333

Abstract: PURPOSE: A structure of a PH sensor detecting electrode and a method for forming the same are provided to simplify manufacturing processes and achieve a uniform article by forming the PH sensor detecting electrode using ion implantation. CONSTITUTION: A PH sensor detecting electrode includes a detecting electrode(12) and a reference electrode. A negative ion layer(26) is formed at a lower portion of the detecting electrode(12) by implanting ions into the lower portion of the detecting electrode(12). In order to prevent the negative ions from spreading towards a silicon wafer(20), a trench(22) is formed at a lower end of the silicon wafer(20) adjacent to the negative ion layer(26). The trench(22) is filled with a wall structure(24) including Si3N4 through a chemical vapor deposition process.

Abstract translation: 目的：提供PH传感器检测电极的结构及其形成方法，以通过使用离子注入形成PH传感器检测电极来简化制造工艺并实现均匀的制品。 构成：PH传感器检测电极包括检测电极（12）和参考电极。 通过将离子注入检测电极（12）的下部，在检测电极（12）的下部形成负离子层（26）。 为了防止负离子朝向硅晶片（20）扩散，在邻近负离子层（26）的硅晶片（20）的下端形成有沟槽（22）。 沟槽（22）通过化学气相沉积工艺填充包括Si 3 N 4的壁结构（24）。

公开(公告)号：KR100397928B1

公开(公告)日：2003-09-13

申请号：KR1020010048557

申请日：2001-08-11

Applicant: 재단법인 포항산업과학연구원

Inventor： 김광일 ,  정우철 ,  김흥락 ,  김영덕 ,  오민환 ,  김동수

IPC: G01N27/333

Abstract: PURPOSE: A sensor for measuring hydrogen ion concentration having an insulation layer between electrodes is provided to obtain complete chemical and electrical insulation between a detecting electrode and a reference electrode, thereby improving the accuracy of measurement and the productivity. CONSTITUTION: A sensor for measuring hydrogen ion concentration having an insulation layer between electrodes includes a semiconductor wafer base having a measurement groove(12) and a reference groove(14) each opening the lower part; a detecting electrode(16) placed on the surface of the measurement groove and a reference electrode(18) placed on the surface of the reference groove; an insulation layer(30) coated under the lower surface of the base for chemical and electric insulation between the electrodes, and having through holes(30a) each communicating with the lower hole(12a,14a) of each groove; a sensing membrane(32) attached to the insulation layer to close the through hole communicating with the lower hole of the measurement groove; a porous member(34) attached to the insulation layer to close the through hole communicating with the lower hole of the reference groove; a filling solution(24) filled in each groove, contacting with each electrodes, and independently contacting with the sensing membrane and the porous member; and a sealing member(28) preventing the filling solution filled in each groove from evaporating and drying.

Abstract translation: 目的：提供一种在电极之间具有绝缘层的用于测量氢离子浓度的传感器，以在检测电极和参考电极之间获得完全的化学和电绝缘，从而提高测量精度和生产率。 用于测量氢离子浓度的传感器，在电极之间具有绝缘层，该传感器包括：具有测量槽（12）和基准槽（14）的半导体晶片基座，每个测量槽打开下部; 放置在测量槽表面上的检测电极（16）和放置在参考槽表面上的参考电极（18） （30），该绝缘层（30）被涂覆在所述基座的下表面下方，用于所述电极之间的化学和电绝缘，并且具有通孔（30a），每个通孔与每个凹槽的所述下孔（12a，14a）连通; 感测膜（32），附着到绝缘层上以关闭与测量槽的下孔连通的通孔; 多孔构件（34），所述多孔构件附接到所述绝缘层以封闭与所述基准凹槽的所述下孔连通的所述通孔; 填充在每个凹槽中的填充溶液（24），所述填充溶液（24）与每个电极接触，并独立地接触传感膜和多孔构件; 和密封构件（28），防止填充在每个凹槽中的填充溶液蒸发和干燥。

公开(公告)号：KR100397926B1

公开(公告)日：2003-09-13

申请号：KR1020010048561

申请日：2001-08-11

Applicant: 재단법인 포항산업과학연구원

Inventor： 김흥락 ,  김광일 ,  정우철 ,  김영덕 ,  오민환 ,  김동수

IPC: G01N27/333

Abstract: PURPOSE: A sensor measuring hydrogen ion concentration is provided to easily handle the sensor and simply carry out the sensor while maintaining accurate measurement and extending the life, thereby improving the productivity and application. CONSTITUTION: A sensor measuring hydrogen ion concentration includes a semiconductor wafer base(20) having a measurement groove(22) and a reference groove(24) each opening the lower part; a measurement electrode(26) placed on the surface of the measurement groove and connected to a voltmeter(36) for measuring excited voltage; a reference electrode(28) placed on the surface of the reference groove and connected to the voltmeter; a sensing membrane(30) closing the lower hole of the measurement groove and contacting with a solution to be measured; an agar(32) closing the lower hole of the reference groove and contacting with the solution to be measured; a filling solution(34) filled in each groove, contacting with each electrode, and independently contacting with the sensing membrane and the agar; and a sealing member(38) applied on the base for preventing the solution filled in each groove from evaporating and drying.

Abstract translation: 目的：提供测量氢离子浓度的传感器，可以轻松处理传感器，并简单地执行传感器，同时保持精确的测量并延长使用寿命，从而提高生产率和应用。 构成：测量氢离子浓度的传感器包括具有测量槽（22）和参考槽（24）的半导体晶片基座（20），每个测量槽打开下部; 放置在测量槽表面上并与用于测量激励电压的电压表（36）连接的测量电极（26） 参考电极（28），放置在参考凹槽的表面上并连接到电压表; 感测膜（30），其关闭测量槽的下孔并与待测溶液接触; 琼脂（32），其关闭基准槽的下孔并与待测溶液接触; 填充在每个凹槽中的填充溶液（34），与每个电极接触，并独立地与传感膜和琼脂接触; 和一个密封件（38），用于防止填充在每个凹槽中的溶液蒸发和干燥。

公开(公告)号：KR100389680B1

公开(公告)日：2003-06-27

申请号：KR1020010048560

申请日：2001-08-11

Applicant: 재단법인 포항산업과학연구원

Inventor： 정우철 ,  김광일 ,  정재인

IPC: B24C7/00

Abstract: PURPOSE: An eliminating apparatus for a plating layer of a welded part for a shaper steel of shipbuilding using a shot blast is provided to peel a plated layer of the welded part continuously by spraying compressed air with polishing power. CONSTITUTION: An eliminating apparatus for a plating layer of a welded part comprises a body(10); a vacuum pump(20); a dust collector(30); a polishing powder recovery tank(40); a polishing powder supply unit(50); a compressed air supply pump(60) and a static pressure air tank(70). A part of a shaper steel(4) is inserted inside of the body. An end plated portion of the body is polished by compressed air with polishing powder. The vacuum pump draws polishing powder of the body. Contaminated dust in polishing powder is collected to the dust collector. The polishing powder recovery tank stores polishing powder removed with contaminant. The polishing powder supply unit transfers polishing powder of the recovery tank to a shot blast nozzle in the body. The compressed air supply pump produces and supplies compressed air to the polishing powder supply unit. The static pressure air tank supplies transformed compressed air to an air curtain nozzle(18) of the body. Thereby, a surface of the welded part is clean than usual method and separate contacting components is not used during manufacturing process.

Abstract translation: 目的：提供一种用于使用喷丸的造船用成形钢的焊接部分的镀层去除装置，以通过喷射具有抛光能力的压缩空气连续地剥离焊接部分的镀层。 构成：一种用于焊接部件的镀层的消除装置，包括一个本体（10）; 一个真空泵（20）; 一个集尘器（30）; 抛光粉回收罐（40）; 抛光粉供应单元（50）; 一个压缩空气供应泵（60）和一个静压空气罐（70）。 整形钢（4）的一部分插入体内。 主体的端部镀覆部分用压缩空气抛光粉抛光。 真空泵吸取人体的抛光粉。 抛光粉中的污染粉尘被收集到集尘器中。 抛光粉回收罐储存带有污染物的抛光粉。 抛光粉供应单元将回收罐的抛光粉转移到主体中的喷丸喷嘴。 压缩空气供应泵产生压缩空气并将其供应给抛光粉供应单元。 静压空气罐将转化的压缩空气供应到本体的气帘喷嘴（18）。 由此，焊接部分的表面比通常方法清洁，并且在制造过程中不使用单独的接触部件。

公开(公告)号：KR100383270B1

公开(公告)日：2003-05-12

申请号：KR1020000082381

申请日：2000-12-26

Applicant: 재단법인 포항산업과학연구원 ,  주식회사 웨스코일렉트로드 ,  주식회사 포스코

Inventor： 정재인 ,  정우철 ,  정창영

IPC: C23C14/00

Abstract: PURPOSE: A method for forming a Ta coating film by sputtering is provided which easily forms a β-phase having a high activity by controlling substrate temperature and substrate bias voltage using a nonequilibrium magnetron sputtering evaporation source as a sputtering evaporation source. CONSTITUTION: In a method for forming a Ta coating film on the surface of a Ti material using a sputtering evaporation source, the method for forming the Ta coating film by sputtering comprises the process of forming the Ta coating film on the surface of the Ti material by controlling substrate temperature of the Ti material and substrate bias voltage respectively so that a ratio of X ray diffraction peak to a phase of the Ta coating film(β/α) becomes 1 or more using a nonequilibrium magnetron sputtering evaporation source as a sputtering evaporation source(2), wherein a bias voltage is not impressed to the substrate(4), the substrate is floated, and the ratio of X ray diffraction peak(β/α) is represented in a ratio of magnitudes of β peak and α peak.

Abstract translation: 目的：提供一种通过溅射形成Ta涂膜的方法，该方法通过使用非平衡磁控管溅射蒸发源作为溅射蒸发源来控制衬底温度和衬底偏压，从而容易地形成具有高活性的β相。 构成：在使用溅射蒸发源在Ti材料的表面上形成Ta涂膜的方法中，通过溅射形成Ta涂膜的方法包括在Ti材料的表面上形成Ta涂膜的过程 通过分别控制Ti材料的衬底温度和衬底偏置电压，使得使用非平衡磁控溅射使X射线衍射峰与Ta涂膜的相位之比（β/α）变为1或更大 蒸发源作为溅射蒸发源（2），其中偏置电压未施加到衬底（4），衬底浮动，并且X射线衍射峰（β/α）比为 以β的大小比例表示; 峰值和＆alpha; 峰。

公开(公告)号：KR1020030014535A

公开(公告)日：2003-02-19

申请号：KR1020010048565

申请日：2001-08-11

Applicant: 재단법인 포항산업과학연구원

Inventor： 정우철 ,  김광일 ,  김영덕 ,  김흥락 ,  오민환 ,  김동수

IPC: G01N27/333

Abstract: PURPOSE: A sensor for measuring hydrogen ion concentration having a temperature sensor and an apparatus for measuring hydrogen ion concentration having the sensor are provided to easily use the sensor and reduce the size of the sensor by detecting temperature as well as hydrogen ion concentration. CONSTITUTION: An apparatus for measuring hydrogen ion concentration includes a sensor measuring hydrogen ion concentration having a temperature sensor(28); an amplifier(34) amplifying the hydrogen ion concentration measured by the sensor; a collective amplifier(36) collecting the amplified hydrogen ion concentration value for amplifying; a differential amplifier(42) directly connected to the temperature sensor for receiving an actual temperature value detected by the temperature sensor and receiving the temperature value through a detecting circuit(32), so that the differential amplifier differentiates and amplifies each temperature value; a CPU(38) calculating and outputting the corrected hydrogen ion concentration value and the temperature value by using the amplified hydrogen ion concentration value and the temperature value; and a display(40) visually providing the output value output from the CPU.

Abstract translation: 目的：提供一种用于测量具有温度传感器的氢离子浓度的传感器和用于测量具有传感器的氢离子浓度的装置，以便容易地使用传感器并通过检测温度以及氢离子浓度来减小传感​​器的尺寸。 构成：用于测量氢离子浓度的装置包括测量具有温度传感器（28）的氢离子浓度的传感器; 放大器（34），放大由传感器测量的氢离子浓度; 收集放大的氢离子浓度值进行放大的集体放大器（36） 直接连接到温度传感器的差分放大器（42），用于接收由温度传感器检测的实际温度值，并通过检测电路（32）接收温度值，使得差分放大器对每个温度值进行差分和放大; CPU（38）通过使用放大的氢离子浓度值和温度值来计算并输出经校正的氢离子浓度值和温度值; 以及可视地提供从CPU输出的输出值的显示器（40）。

公开(公告)号：KR1020030014527A

公开(公告)日：2003-02-19

申请号：KR1020010048557

申请日：2001-08-11

Applicant: 재단법인 포항산업과학연구원

Inventor： 김광일 ,  정우철 ,  김흥락 ,  김영덕 ,  오민환 ,  김동수

IPC: G01N27/333

Abstract: PURPOSE: A sensor for measuring hydrogen ion concentration having an insulation layer between electrodes is provided to obtain complete chemical and electrical insulation between a detecting electrode and a reference electrode, thereby improving the accuracy of measurement and the productivity. CONSTITUTION: A sensor for measuring hydrogen ion concentration having an insulation layer between electrodes includes a semiconductor wafer base having a measurement groove(12) and a reference groove(14) each opening the lower part; a detecting electrode(16) placed on the surface of the measurement groove and a reference electrode(18) placed on the surface of the reference groove; an insulation layer(30) coated under the lower surface of the base for chemical and electric insulation between the electrodes, and having through holes(30a) each communicating with the lower hole(12a,14a) of each groove; a sensing membrane(32) attached to the insulation layer to close the through hole communicating with the lower hole of the measurement groove; a porous member(34) attached to the insulation layer to close the through hole communicating with the lower hole of the reference groove; a filling solution(24) filled in each groove, contacting with each electrodes, and independently contacting with the sensing membrane and the porous member; and a sealing member(28) preventing the filling solution filled in each groove from evaporating and drying.

Abstract translation: 目的：提供一种用于测量在电极之间具有绝缘层的氢离子浓度的传感器，以在检测电极和参比电极之间获得完全的化学和电绝缘，从而提高测量精度和生产率。 构成：用于测量在电极之间具有绝缘层的氢离子浓度的传感器包括：半导体晶片基底，具有测量槽（12）和基准凹槽（14），每个开放下部; 放置在测量槽的表面上的检测电极（16）和放置在基准槽的表面上的参考电极（18）; 绝缘层（30），其涂覆在所述基底的下表面下方，用于在所述电极之间进行化学和电绝缘，并且具有各自与每个沟槽的下孔（12a，14a）连通的通孔（30a） 安装在所述绝缘层上以闭合与所述测量槽的所述下孔连通的所述通孔的传感膜; 安装在所述绝缘层上的多孔构件（34），以封闭与所述基准槽的下孔连通的贯通孔; 填充溶液（24），其填充在每个凹槽中，与每个电极接触并且独立地与感测膜和多孔构件接触; 以及防止填充在每个凹槽中的填充溶液蒸发和干燥的密封构件（28）。