公开(公告)号：JPH0750267A

公开(公告)日：1995-02-21

申请号：JP21231793

申请日：1993-08-04

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  TODA ATSUSHI

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/042 ,  H01S3/18

Abstract: PURPOSE:To grow a low resistance p-type II-VI compound semiconductor with high productivity which semiconductor contains sufficiently high concentration nitrogen as impurities. CONSTITUTION:By a chemical vapor deposition method wherein amino compound containing bonds of group II elements and nitrogen and amino compound containing group VI elements and nitrogen are used as raw material, a p-type ZnSe optical waveguide layer 6, a p-type Zn1-pMgpSgSe1-q clad layer 7, a p-type ZnSySe1-y layer 8, and a p-type ZnSe contact layer 9 are epitaxially grown in order.

公开(公告)号：JPH06237043A

公开(公告)日：1994-08-23

申请号：JP4327993

申请日：1993-02-08

Applicant: SONY CORP

Inventor： TODA ATSUSHI

IPC: H01S5/00 ,  H01S5/18 ,  H01S3/18

Abstract: PURPOSE:To realize a surface emission laser having a simple manufacturing process, a high output and high reliability. CONSTITUTION:A DBR semiconductor multilayer film 2 as a reflecting mirror is formed onto an n-type semiconductor substrate 1, a horizontal resonator having double-heterostructure consisting of an n-type clad layer 3, an active layer 4 and a p-type clad layer 5 is formed onto the film 2, and a dielectric multilayer film 9 as the reflecting mirror is shaped onto a side face containing the reflecting end face of the horizontal resonator. A trench 7 in depth up to a section just above the active layer 4 is formed to the p-type clad layer 5. The trench 7 is used as a scatterer, the light of an optical field generated in the horizontal resonator is scattered, and surface emission is realized with high efficiency by the action, etc., of the DBR semiconductor multilayer film 2.

公开(公告)号：JPH06152060A

公开(公告)日：1994-05-31

申请号：JP30403492

申请日：1992-11-13

Applicant: SONY CORP

Inventor： YAMAMOTO SUNAO ,  ISHIBASHI AKIRA ,  TODA ATSUSHI

IPC: H01S5/00 ,  H01S5/20 ,  H01S3/18

Abstract: PURPOSE:To enable high output by providing an active layer with a double hetero structure wherein it is held between a P-type clad layer and an N-type clad layer of specified refraction factor, by providing a P-type barrier layer of specified refractive index between the active layer and the P-type clad layer, by making each refractive index to satisfy specified conditions and by specifying a thickness of the barrier layer. CONSTITUTION:An active layer 4 has a double hetero structure wherein it is held between a P-type clad layer 1 of refractive index n1 and an N-type clad layer 2 of refractive index n2. A barrier layer 3 to electron from the P-type active layer 4 of refractive index n3 is held between the active layer 4 and the P-type clad layer 1. Each refractive index is made to satisfy conditions of n1>n2 and n1>=n3, and 40 to 190Angstrom is selected for a thickness of the barrier layer 3. Thereby, an LOC structure can be adopted and high output can be acquired. Since light from the active layer 4 is made to permeate the side of the P-type clad layer 1, lowering of a life can be avoided.