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公开(公告)号：JPH11238937A
公开(公告)日：1999-08-31
申请号：JP3767198
申请日：1998-02-19
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO
Abstract: PROBLEM TO BE SOLVED: To realize the growth of a crystal by correcting the non-matching of a lattice due to introduced impurities, especially when the crystal of a p-type semiconductor layer is grown. SOLUTION: In a process for lattice-matching, a semiconductor layer constituted of a multi-dimensional material with a substrate crystal and for growing the crystal while impurity is introduced, the growing process of a second clad layer (a p-clad layer 10) of a semiconductor laser, for example, the supply quantity of a specified element (In) whose mixed crystal rate drops by the introduction of impurity (Zn) is increased, in accordance with impurity introduction quantity among elements constituting the multi-dimensional material (AlGaInP, for example). Thus, uniform lattice matching can be provided in respective layers.
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公开(公告)号：JPH10223536A
公开(公告)日：1998-08-21
申请号：JP2056797
申请日：1997-02-03
Applicant: SONY CORP
Inventor： IMANISHI DAISUKE , YAMAMOTO SUNAO
IPC: H01L21/205
Abstract: PROBLEM TO BE SOLVED: To avoid the change in a pressure in a reaction pipe that is generated when the valve of a feed gas cylinder is closed by providing a switching means for switching a feed gas from a feed gas supply source due to the gas cylinder and a carrier gas to supply it to a reaction pipe where chemical vapor deposition is made. SOLUTION: In a chemical vapor deposition device with at least a high- voltage gas cylinder at one portion of a feed gas supply source 32, a switching means 100 is provided to switch a feed gas from the feed gas cylinder of the feed gas supply source 32 and a carrier gas from the carrier gas supply source 12 to supply it to a reaction pipe 13 by the switching operation of valves 100a and 100b, for example, during the chemical vapor deposition. When a valve 70 of the feed gas supply source 32 is closed and the feed gas is stopped, the amount of supplied carrier gas is adjusted so that a required amount of carrier gas for avoiding the fluctuation in a pressure that is generated in the reaction pipe 13 is supplied to the reaction pipe 13, thus preventing the pressure in the reaction pipe 13 from changing.
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公开(公告)号：JPH0936477A
公开(公告)日：1997-02-07
申请号：JP18288995
申请日：1995-07-19
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO
Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element excellent in the operational characteristics by constituting a sufficiently reliable etching stop layer with no restriction on the critical thickness thereof. SOLUTION: At least a clad layer 13 of first conductivity type, an active layer 14, a first clad layer 15A of second conductivity type, a strained etching stop layer 19 larger than the band gap of active layer 14, and a second clad layer 15B of second conductivity type are formed sequentially on a substrate 11 and a compensation layer 21 larger than the band gap of active layer 14 is formed contiguously to the strained etching stop layer 19 while being strained reversely thereto. Furthermore, grooves 17 to be filled with a current constriction layer 18 are made on the opposite sides of the stripe current path with a depth reaching the etching stop layer 19 from second clad layer 15B of second conductivity type.
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公开(公告)号：JPH08274410A
公开(公告)日：1996-10-18
申请号：JP7388695
申请日：1995-03-30
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO
Abstract: PURPOSE: To prevent introduction of H to an InP semiconductor layer by performing epitaxial growth for a compound semiconductor layer containing As after formation of a compound semiconductor layer containing INP by using organic As using As as a raw material by a metal organic vapor phase growth method. CONSTITUTION: An n-type GaAs buffer layer 1, an n-type AlGaInP first clad layer 3, a nondoped GaInP active layer 4, a p-type AlGaInP second clad layer 5, a p-type GaInP intermediate layer 6 and a p-type GaAs cap layer 7 are formed epitaxially on an n-type GaAs substrate by an MOCVD method. in formation after the formation of the second clad layer 5, organic As (TAM, etc.) is especially used in MOCVD of the cap layer 7 as a raw material of As thereof. Since H does not exist around As in the constitution, H is prevented from being introduced to an InP semiconductor layer of the AlGaInP second clad layer 5 and the GaInP intermediate layer 6.
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公开(公告)号：JPH06196813A
公开(公告)日：1994-07-15
申请号：JP23186493
申请日：1993-09-17
Applicant: SONY CORP
Inventor： FUTAKI MAKOTO , ANDO KATSUMI , YAMAMOTO SUNAO
Abstract: PURPOSE:To reduce re-incident reflected rays to an optical system by the reflected rays of returned rays from the greater part of the front end face of a semiconductor substrate oppositely faced to the optical system by retreating the front end face of the substrate just under at least a laser-beam outgoing end. CONSTITUTION:In a semiconductor laser, in which a laser diode section 2 is formed onto a semiconductor base body 1, the front end face 1a of the semiconductor base body just under at least the laser-beam outgoing end (a) of the semiconductor laser is retreated to a section rearer than a laser-beam outgoing end face. The front end face 1a is formed in an optically roughened surface in the constitution. Since the substrate thickness of the semiconductor base body 1 occupies the greater part of the total thickness of the laser practically in the semiconductor laser, rays are scattered by retreating the front end face 1a and forming the front end face in the optically roughened surface in a section just under at least the laser-beam outgoing end face (a) of the front end face, thus reducing the efficiency of returned rays to an optical system, then improving a tracking error and the deterioration of C/N.
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Patent Agency Ranking
公开(公告)号：JPH06151330A
公开(公告)日：1994-05-31
申请号：JP30120392
申请日：1992-11-11
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO , ISHIBASHI AKIRA , NAKANO KAZUSHI
IPC: H01L21/20 , H01L21/205 , H01S5/00 , H01S3/18
Abstract: PURPOSE:To perform uniform epitaxy by specifying the conditional relationship of the arrangement region of a substrate to be epitaxially grown. CONSTITUTION:A substrate 10 to be epitaxially grown is installed inside an epitaxial growth reaction chamber within a range satisfying conditions of Z
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公开(公告)号：JPH0697577A
公开(公告)日：1994-04-08
申请号：JP24508892
申请日：1992-09-14
Applicant: SONY CORP
Inventor： NARUI HIRONOBU , DOI MASATO , OGAWA MASAMICHI , YAMAMOTO SUNAO
Abstract: PURPOSE:To make the diminishment in the threshold value as well as the selfpulsation feasible. CONSTITUTION:Within the semiconductor laser wherein a semiconductor part 23 in trianglular sectional shape is formed on the ridge 22 formed on a semiconductor substrate 20 while an active layer 21 divided from the other part is formed in the semiconductor part 23, the thickness in both outside edges in the width direction orthogonal to the resonator length direction of the active layer 21 is specified to be larger than that in the central part.
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公开(公告)号：JP2002094183A
公开(公告)日：2002-03-29
申请号：JP2001256416
申请日：2001-08-27
Applicant: SONY CORP
Inventor： MORITA ETSUO , TOMITANI SHIGETAKA , YAMAMOTO SUNAO , ISHIBASHI AKIRA
IPC: H01S5/223
Abstract: PROBLEM TO BE SOLVED: To constitute a compound semiconductor device containing phosphorus to enclose carriers through one time of crystal growth. SOLUTION: The compound semiconductor layer is constituted in such a way that the main surface IS of a compound semiconductor substrate 1 is composed of a plane inclined toward (110)-crystal axis from (001)-crystal plane. A ridge 2 or groove which is extended along (110)-crystal axis is formed on the main surface IS and a compound semiconductor layer 10 is epitaxially grown on the substrate 1. In addition, at least part of the semiconductor layer 10 is constituted of a phosphorus-containing semiconductor material and at least a functional layer (active layer 5) having (111)-crystal plane is provided in the semiconductor layer 10.
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公开(公告)号：JPH10200186A
公开(公告)日：1998-07-31
申请号：JP30097
申请日：1997-01-06
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO
Abstract: PROBLEM TO BE SOLVED: To satisfy the need of a laser having various characteristics by growing an active layer epitaxially in a semiconductor wafer such that the thickness decreases gradually from the gas supply side toward the gas discharge side thereby obtaining various characteristics on a single sheet of wafers. SOLUTION: A first n-type buffer layer, a second n-type buffer layer, an n-type clad layer, an active layer, a p-type clad layer, a p-type buffer layer and a p-type cap layer are formed sequentially on a semiconductor substrate. A film 3 is grown epitaxially on the substrate 2, e.g. a semiconductor wafer, such that the thickness decreases gradually from the material gas supply side toward the material gas discharge side by varying the conditions of epitaxial growth in a reaction tube 1. According to the method, a semiconductor laser having various wavelengths, emission angles, and the like, can be obtained through single epitaxial growth on a single wafer for fabricating the semiconductor laser.
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公开(公告)号：JPH10125604A
公开(公告)日：1998-05-15
申请号：JP27677196
申请日：1996-10-21
Applicant: SONY CORP
Inventor： YAMAMOTO SUNAO
IPC: C30B25/08 , C23C16/44 , C30B35/00 , H01L21/02 , H01L21/205
Abstract: PROBLEM TO BE SOLVED: To provide a thin film forming device with which there is not risk of scattering a toxic or flammable reaction gas into the air. SOLUTION: An MOCVD 14 device is provided with pipes 12A and 12B. It is also provided with a shielding casing 18, which seals and covers a reaction chamber 13 inside. The shielding casing 18 is provided with a gas leasing pipe 20 and a gas exhaust pipe 22 for leading gas inside and exhausting it. When a reactions gas which is to a human body is led into the MOCVD device and used, nitrogen gas is led into the shielding casing 18 to expel oxygen. Since the shielding casing 18 is filled with nitrogen gas, even if the reaction chamber 13 is broken, there is not risk of a toxic or flammable reaction gas leaking into a clean room in which the MOCVD device 14 is placed or letting the reaction gas catch fire by touching oxygen in the shielding casing 18.
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