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121.发明授权公开(公告)号：US09360443B2
公开(公告)日：2016-06-07
申请号：US13668760
申请日：2012-11-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moon Chul Lee , Duck Hwan Kim , In Sang Song , Jea Shik Shin
CPC classification number: G01N27/04 , B81B2201/02 , H03H3/0072 , H03H3/0077 , H03H9/2463 , H03H2009/02346 , H03H2009/0244
Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.
Abstract translation: 提供了纳米级谐振器，纳米级传感器及其制造方法。 所述纳米级谐振器包括纳米级的谐振单元，其被配置为基于所施加的信号而谐振，并且所述锚固件被构造成支撑所述谐振单元，所述锚固件在所述锚的边界内具有气隙， 谐振单元和基板，气隙被配置为反映在谐振单元中发生的垂直波。
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公开(公告)号：US20150370063A1
公开(公告)日：2015-12-24
申请号：US14410211
申请日：2013-06-12
Applicant: SILEX MICROSYSTEMS AB
Inventor： Peter AGREN
CPC classification number: G02B26/0841 , B81B3/0021 , B81B3/0045 , B81B2201/02 , B81B2201/03 , B81B2203/04 , B81C1/00357 , B81C1/00619 , G01D5/24 , G02B26/085 , H01L23/481 , H01L23/5225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的衬底（10）延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。
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公开(公告)号：KR1020130094918A
公开(公告)日：2013-08-27
申请号：KR1020120016181
申请日：2012-02-17
Applicant: 삼성전자주식회사
CPC classification number: G01N27/04 , B81B2201/02 , H03H3/0072 , H03H3/0077 , H03H9/2463 , H03H2009/02346 , H03H2009/0244
Abstract: PURPOSE: A nanoscale resonator, a nanoscale sensor, and a manufacturing method thereof are provided to use an air gap and an anchor of the same height, thereby improving a crystal characteristic deterioration problem of a resonant layer due to the inclined structure. CONSTITUTION: A resonant unit (210) resonates based on an applied signal. Based on the laser interferometeric lithography using the interference fringes of light, the resonant unit is formed in the nanoscale. The resonant unit comprises a first electrode (261), a second electrode (263), resonant layers (251,253), and a sub resonant unit (211). An air gap (220) is located in the upper part of a substrate (240) and reflects the vertical directional waive which is generated from the resonant unit. Anchors (231,233) are located on both sides of the air gap. The anchors have the same gap with the air gap and support the resonant unit. Based on the laser interferometeric lithography using the interference fringes of light, the resonant unit of the nanoscale is formed.
Abstract translation: 目的：提供纳米级谐振器，纳米级传感器及其制造方法，以使用相同高度的气隙和锚，从而改善由于倾斜结构导致的共振层的晶体特性劣化问题。 构成：谐振单元（210）基于所施加的信号共振。 基于使用光的干涉条纹的激光干涉光刻，共振单元形成为纳米级。 谐振单元包括第一电极（261），第二电极（263），谐振层（251,253）和子谐振单元（211）。 空气间隙（220）位于基板（240）的上部，并且反射从共振单元产生的垂直方向放弃。 锚（231,233）位于气隙两侧。 锚具与气隙具有相同的间隙并支撑谐振单元。 基于使用光的干涉条纹的激光干涉光刻，形成纳米级的谐振单元。
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公开(公告)号：KR1020040056212A
公开(公告)日：2004-06-30
申请号：KR1020020082783
申请日：2002-12-23
Applicant: 재단법인 포항산업과학연구원
IPC: B81B7/00
CPC classification number: B81B7/02 , B81B2201/02 , B81B2203/04 , B81C1/00015
Abstract: PURPOSE: An MEMS pH sensor having an Ag/AgCl electrode structure and a method for manufacturing the same are provided to expand life span of the MEMS pH sensor by minimizing loss of an Ag/AgCl electrode in KCl solution. CONSTITUTION: A pair of Ag layers including solvent and powder are obtained by silk printing Ag paste on a silicon wafer(22). After removing a solvent component from the Ag layers, a powder component of the Ag layers is cured, thereby obtaining a pair of cured Ag layers. Then, the cured Ag layers are subject to an electrolysis process in such a manner that an AgCl layer is formed on an upper surface of the Ag electrode, thereby forming a pair of Ag/AgCl electrodes. The Ag/AgCl electrodes are formed on a reference electrode(14) and a detection electrode(16) of the MEMS pH sensor.
Abstract translation: 目的：提供具有Ag / AgCl电极结构的MEMS pH传感器及其制造方法，以通过最小化KCl溶液中Ag / AgCl电极的损失来延长MEMS pH传感器的使用寿命。 构成：通过在硅晶片（22）上印刷Ag膏来获得包括溶剂和粉末的一对Ag层。 从Ag层除去溶剂成分后，使Ag层的粉末成分固化，得到一对固化的Ag层。 然后，将固化的Ag层进行电解处理，使得在Ag电极的上表面上形成AgCl层，由此形成一对Ag / AgCl电极。 Ag / AgCl电极形成在MEMS pH传感器的参考电极（14）和检测电极（16）上。
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公开(公告)号：US20240190700A1
公开(公告)日：2024-06-13
申请号：US18436950
申请日：2024-02-08
Applicant: Amkor Technology Singapore Holding Pte. Ltd.
Inventor： Ki Yeul YANG , Kyung Han RYU , Seok Hun YUN , Bora BALOGLU , Hyun CHO , Ramakanth ALAPATI
CPC classification number: B81C1/00182 , B81B7/007 , B81C1/00158 , B81C1/00301 , H01L23/481 , B81B2201/02
Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.
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Patent Agency Ranking
公开(公告)号：US11915924B2
公开(公告)日：2024-02-27
申请号：US17030874
申请日：2020-09-24
Applicant: DENSO CORPORATION , KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
Inventor： Megumi Suzuki , Yasuo Yamamoto , Teruhisa Akashi
IPC: B81C1/00 , B81B7/00 , H01L21/02 , H01L23/08 , H01L23/10 , H01L21/311 , H01L29/84 , G01P15/08 , G01P15/125
CPC classification number: H01L21/02164 , B81B7/0035 , B81B7/0061 , B81C1/00293 , B81C1/00349 , H01L21/31111 , H01L23/08 , H01L23/10 , H01L29/84 , B81B2201/02 , B81C2201/019 , B81C2203/03 , G01P15/0802 , G01P15/125
Abstract: A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.
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127.发明授权公开(公告)号：US11714012B2
公开(公告)日：2023-08-01
申请号：US16855397
申请日：2020-04-22
Applicant: Paul D Okulov
Inventor： Paul D Okulov
CPC classification number: G01L1/005 , G01L1/04 , G01L1/044 , G01M5/0033 , G01M5/0083 , B81B2201/02
Abstract: A low power consumption multi-contact micro electro-mechanical strain/displacement sensor and miniature autonomous self-contained systems for recording of stress and usage history with direct output suitable for fatigue and load spectrum analysis are provided. In aerospace applications the system can assist in prediction of fatigue of a component subject to mechanical stresses as well as in harmonizing maintenance and overhauls intervals. In alternative applications, i.e. civil structures, general machinery, marine and submarine vessels, etc., the system can autonomously record strain history, strain spectrum or maximum values of the strain over a prolonged period of time using an internal power supply or a power supply combined with an energy harvesting device. The sensor is based on MEMS technology and incorporates a micro array of flexible micro or nano-size cantilevers. The system can have extremely low power consumption while maintaining precision and temperature/humidify independence.
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公开(公告)号：US20190236435A1
公开(公告)日：2019-08-01
申请号：US16381955
申请日：2019-04-11
Inventor： Sven SPIETH
CPC classification number: G06M1/083 , A61L2/28 , B81B3/0067 , B81B2201/02 , G06K19/0723 , G06M1/06 , G06M1/101 , G06M1/27
Abstract: A device has a latching mechanism including a catch element having at least two catches, and a pawl configured to engage in a catch interstice between two catches. The catch element is movable in relation to the pawl in a freewheeling direction, and a movement of the catch element in relation to the pawl in a blocking direction may be blocked by means of the pawl. The device further includes a deflectable actuator configured to move the catch element and the pawl relative to each other on a catch-by-catch basis in the freewheeling direction by means of deflection. According to the invention, the device also includes an electric component configured to change its electric property as a function of the catch-wise movement of the catch element in relation to the pawl.
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129.发明申请公开(公告)号：US20190210867A1
公开(公告)日：2019-07-11
申请号：US16225419
申请日：2018-12-19
Applicant: BOE Technology Group Co., Ltd.
Inventor： Lei ZHAO
IPC: B81B7/02 , H01L41/297 , H01L41/09 , B81C1/00
CPC classification number: B81B7/02 , B81B2201/02 , B81C1/00047 , B81C1/00531 , B81C1/00539 , H01L41/09 , H01L41/297
Abstract: The present disclosure provides an ultrasonic transducer and a method for manufacturing an ultrasonic transducer, a display substrate and a method for manufacturing a display substrate. The method for manufacturing the ultrasonic transducer includes: forming a via hole in a substrate; forming a structural layer on a side of the substrate, the structural layer cover the via hole; and etching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole.
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公开(公告)号：US20180362331A1
公开(公告)日：2018-12-20
申请号：US15739913
申请日：2017-03-03
Applicant: Goertek Inc.
Inventor： Junkai ZHAN , Zonglin ZHOU , Guanxun Qiu , Mengjin CAI
CPC classification number: B81B7/0058 , B81B2201/02 , B81C1/00261 , B81C3/001
Abstract: A method for forming a filter net on an MEMS sensor and an MEMS sensor are disclosed. The method comprises the following steps: disposing a dissociable adhesive tape on a base material, and forming a filter net on an adhesive surface of the dissociable adhesive tape; transferring the filter net on a film to form a self-adhesive coiled material; and transferring and adhering the filter net on the self-adhesive coiled material to collecting a hole of the MEMS sensor. The filter net formed by the method have fine and uniform meshes, and a yield is high. In addition, the method is suitable for large-scale and industrialized production.
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