公开(公告)号：JP5497247B1

公开(公告)日：2014-05-21

申请号：JP2013553692

申请日：2013-02-19

Applicant: 信越石英株式会社

Inventor： 茂 山形

IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC classification number: C03B19/02 ,  C03B19/095 ,  C03B2201/04 ,  C03B2201/07 ,  C03B2201/23 ,  C03B2201/54 ,  C03C3/06 ,  C03C8/02 ,  C03C10/0009 ,  C03C21/008 ,  C03C23/007 ,  C03C2201/02 ,  C03C2201/54 ,  C03C2201/80 ,  C03C2203/10 ,  C30B15/10 ,  C30B29/06 ,  Y02P40/57 ,  Y10T117/1032

Abstract: 本発明は、内側に透明シリカガラスから成る透明層を有し、外側に気泡を含有する不透明シリカガラスから成る不透明層を有する単結晶シリコン引き上げ用シリカ容器であって、前記透明層が、前記シリカ容器の内表面側に位置し、ＯＨ基を２００〜２０００ｍａｓｓｐｐｍの濃度で含有する高ＯＨ基層と、該高ＯＨ基層よりもＯＨ基濃度が低い低ＯＨ基層とから成り、前記高ＯＨ基層がＢａを５０〜２０００ｍａｓｓｐｐｍの濃度で含有するものである単結晶シリコン引き上げ用シリカ容器である。 これにより、単結晶シリコン引き上げ用にシリカ容器を用いた場合に、該容器使用開始後短時間のうちに該容器の透明シリカガラスから成る内側表面の全面が微細結晶化（グラスセラミックス化）することにより、該容器内側表面のシリコン融液に対する耐エッチング性（耐侵食性）を大幅に向上させるようなシリカ容器、及び、そのようなシリカ容器の製造方法が提供される。

公开(公告)号：JP5314429B2

公开(公告)日：2013-10-16

申请号：JP2008548289

申请日：2007-12-04

Applicant: 信越石英株式会社

Inventor： 龍弘 佐藤 ,  宜正 吉田 ,  勝英 折笠 ,  信 田中

IPC: C03B20/00 ,  C03C3/06 ,  C03C11/00

CPC classification number: C03B19/1453 ,  C03B2201/07 ,  C03B2201/23 ,  C03C3/06 ,  C03C2201/80 ,  Y10T428/24967 ,  Y10T428/249969

Abstract: Provided is a method for producing a synthetic opaque quartz glass where flame processing can be performed in high purity with a simple way and even a large sized one can be produced, and the synthetic opaque quartz glass. A method for producing a synthetic opaque quartz glass which comprises the step of heating and burning a quartz glass porous body under a pressure of from 0.15 MPa to 1000 MPa at a temperature of from 1200° C. to 2000° C. The quartz glass porous body is prepared by depositing quartz glass particles which are produced by hydrolyzing a silicon compound with an oxyhydrogen flame.

公开(公告)号：JP4118952B2

公开(公告)日：2008-07-16

申请号：JP52909397

申请日：1997-02-13

Applicant: サン‐ゴバン クオーツ パブリック リミティド カンパニー

Inventor： ウェルズ，ピーター，ジョン ,  セイス，イアン，ジョージ

IPC: C03B20/00 ,  C03B3/02 ,  C03B19/09 ,  C03C3/06 ,  C03C11/00

CPC classification number: C03B19/095 ,  C03B3/026 ,  C03C3/06 ,  C03C11/00 ,  C03C2201/80 ,  C03C2203/10 ,  Y02P40/57 ,  Y10S65/08

公开(公告)号：JP3883233B2

公开(公告)日：2007-02-21

申请号：JP20282096

申请日：1996-07-15

Applicant: 信越石英株式会社

Inventor： 秀夫 伊藤 ,  成隆 村田 ,  信治 橋谷

IPC: C03B20/00 ,  C03C3/06 ,  C03C11/00

CPC classification number: C03C11/00 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/80 ,  C03C2203/52

公开(公告)号：JP2004292190A

公开(公告)日：2004-10-21

申请号：JP2003083915

申请日：2003-03-25

Applicant: Hioki Ee Corp ,  Univ Shinshu ,  信州大学長 ,  日置電機株式会社

Inventor： MURAKAMI YASUSHI ,  HARANO MASAYUKI ,  TAKASU YOSHIO ,  TANIGUCHI MORIO

IPC: C01B33/12 ,  C03C3/06 ,  C03C11/00

CPC classification number: C03C11/00 ,  C03C3/06 ,  C03C2201/80

Abstract: PROBLEM TO BE SOLVED: To provide an amorphous silicon dioxide thin film having a low refractive index and physical strength such as high flaw resistance.
SOLUTION: The amorphous silicon dioxide thin film is transparent, and comprises many fine voids in the inside. Its refractive index (refractive index of light satisfying λ=500 nm) lies in the range of 1.01 to 1.40, and the diameter of the fine voids accounting for ≥80 vol.% of the whole fine void is ≤5 nm.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004131378A

公开(公告)日：2004-04-30

申请号：JP2003327365

申请日：2003-09-19

Applicant: Heraeus Quarzglas Gmbh & Co Kg ,  Shinetsu Quartz Prod Co Ltd ,  ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー ,  信越石英株式会社

Inventor： WERDECKER WALTRAUD ,  LEIST JOHANN ,  GERTIG UDO ,  KOEPPLER RAINER

IPC: C03B20/00 ,  C03B8/02 ,  C03B19/06 ,  C03C3/06

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03C2201/80 ,  C03C2203/20

Abstract: PROBLEM TO BE SOLVED: To provide a homogeneous opaque glass containing no crystalline substance.
SOLUTION: A known manufacturing process for an opaque quartz glass material comprises steps wherein a suspension comprising SiO
2 particles and a liquid is prepared, the suspension is homogenized, the suspension is injected into a mold, the suspension is dried, a porous base made of the suspension is formed and the base is sintered to form the quartz glass material. Based on the process, an improved process which is inexpensive and highly reproducible is developed to realize high purity and markedly homogenous, high porosity. In the improved process, at least a portion of the particles are porous particles formed from aggregates of amorphous, synthetically prepared, nanometer-scaled SiO
2 primary particles having an average primary particle size of ≤100 nm, the porous particles having particle sizes of ≤1mm.
COPYRIGHT: (C)2004,JPO

公开(公告)号：EP2925431A2

公开(公告)日：2015-10-07

申请号：EP13799277.2

申请日：2013-11-29

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Université Montpellier 2, Sciences et Techniques ,  Centre National de la Recherche Scientifique (CNRS)

Inventor： GUILLOT, Marie ,  GOETTMANN, Frédéric ,  DELCHET, Carole ,  EL MOURABIT, Sabah ,  GRANDJEAN, Agnès

IPC: B01J20/10 ,  B01J20/28 ,  C03C11/00 ,  C03C23/00 ,  C03C3/06 ,  C03C25/66 ,  B01J20/30

CPC classification number: C03C23/00 ,  B01D15/26 ,  B01J20/0229 ,  B01J20/103 ,  B01J20/28057 ,  B01J20/28083 ,  B01J20/28085 ,  B01J20/28092 ,  B01J20/3064 ,  B01J20/3071 ,  B01J20/3078 ,  B01J20/3204 ,  B01J20/3219 ,  B01J20/3257 ,  B01J20/3293 ,  B01J20/3295 ,  C02F1/281 ,  C02F1/288 ,  C02F2101/006 ,  C02F2101/166 ,  C02F2101/20 ,  C02F2101/305 ,  C02F2101/306 ,  C02F2101/322 ,  C02F2101/327 ,  C02F2101/345 ,  C02F2101/36 ,  C02F2101/38 ,  C03C3/06 ,  C03C11/00 ,  C03C15/00 ,  C03C17/30 ,  C03C2201/32 ,  C03C2201/80 ,  C03C2218/31

Abstract: The present invention concerns a method for preparing a glass having bimodal macroporous and mesoporous porosity, consisting of subjecting a macroporous glass to pseudomorphic transformation. The present invention also concerns said glass prepared in this way and optionally functionalised, as well as the different uses thereof.

Abstract translation: 本发明涉及用于制备具有双峰孔和中孔的孔隙率，由此大孔玻璃经受假转化玻璃的方法。 因此，本发明涉及玻璃因此，所述制备，任选地官能化，其不同的用途。

公开(公告)号：EP2712946A1

公开(公告)日：2014-04-02

申请号：EP13791676.3

申请日：2013-02-19

Applicant: Shin-Etsu Quartz Products Co., Ltd.

Inventor： YAMAGATA, Shigeru

IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC classification number: C03B19/02 ,  C03B19/095 ,  C03B2201/04 ,  C03B2201/07 ,  C03B2201/23 ,  C03B2201/54 ,  C03C3/06 ,  C03C8/02 ,  C03C10/0009 ,  C03C21/008 ,  C03C23/007 ,  C03C2201/02 ,  C03C2201/54 ,  C03C2201/80 ,  C03C2203/10 ,  C30B15/10 ,  C30B29/06 ,  Y02P40/57 ,  Y10T117/1032

Abstract: The present invention provides a single-crystal silicon pulling silica container comprising: a transparent layer made of transparent silica glass in the inner side of the silica container; and an opaque layer made of opaque silica glass containing gaseous bubbles in the outer side of the silica container, wherein the transparent layer is constituted of a high-OH group layer that is placed on an inner surface side of the silica container and contains the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer that has the OH group concentration lower than that of the high-OH group layer, and the high-OH group layer contains Ba at a concentration of 50 to 2000 ppm by mass. As a result, in a case where the silica container is used for pulling single-crystal silicon, there can be provided the silica container that can greatly improve etching resistance (corrosion resistance) of the container inner surface to silicon melt when the entire inner surface made of transparent silica glass of the container is finely crystallized (turned to glass ceramics) in a short time after start of using the container and also provided a method for producing such a silica container.

Abstract translation: 本发明提供一种单晶硅提拉用二氧化硅容器，其包括：在二氧化硅容器的内侧由透明的石英玻璃构成的透明层; 并制成不透明的石英玻璃中含有二氧化硅容器，worin透明层构成的高OH基层的外侧气泡的不透明层并在二氧化硅容器的内表面侧上放置并包含OH 在200〜2000质量ppm以下，低OH基团层的浓度组确实具有OH基团浓度比该高-OH基层低，和高OH层含有Ba中的50至浓度 2000质量ppm。 其结果是，在将二氧化硅容器用于提拉单晶硅的情况下，可以提供的二氧化硅容器确实可以大大改善蚀刻到硅熔体中的容器内表面的电阻（耐腐蚀性）当整个内表面 使用容器的开始之后进行，在短时间内将容器微细结晶的透明石英玻璃（转向玻璃陶瓷）的并由此的制造寻求的二氧化硅容器提供了一种方法。

公开(公告)号：EP2598449A1

公开(公告)日：2013-06-05

申请号：EP11723354.4

申请日：2011-05-13

Applicant: Qsil Ag Quarzschmelze Ilmenau

Inventor： KREUZBERGER, Thomas

IPC: C03B19/12 ,  C03C1/00

CPC classification number: C03B20/00 ,  C03B19/12 ,  C03C1/006 ,  C03C3/00 ,  C03C11/00 ,  C03C2201/80 ,  C03C2203/22

Abstract: The invention relates to a method for producing a quartz glass body (Q) from a gel body, wherein the gel body generated from a colloidal suspension (S) is at least formed and compressed into the quartz glass body (Q). According to the invention, displacement bodies (V) are added to the colloidal suspension (S) prior to gelating into the gel body, and are completely removed from the gel body after gelating, wherein hollow spaces (H) are generated at the positions of the removed displacement bodies (V), so that a translucent or opaque quartz glass body (Q) is generated. The invention further relates to a gel body for producing a quartz glass body (Q), wherein displacement bodies (V) are introduced into the gel body that can be completely removed from the gel body, so that hollow spaces (H) arise at the positions of the displacement bodies (V). The invention further relates to a quartz glass body comprising vacuoles or hollow spaces (H) filled with gas.

公开(公告)号：EP2202335A1

公开(公告)日：2010-06-30

申请号：EP08825825.6

申请日：2008-09-29

Applicant: Japan Super Quartz Corporation

Inventor： KISHI, Hiroshi

IPC: C30B15/00 ,  C03B20/00 ,  C30B29/06

CPC classification number: C30B15/10 ,  C03C3/06 ,  C03C19/00 ,  C03C2201/80 ,  C03C2203/10 ,  C03C2204/08 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032

Abstract: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 µm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.