Abstract:
High speed optical modulators (700) can be made of k modulators (740) connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line (710) is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers (720). Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
Abstract:
High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
Abstract:
A magneto-optic modulator modulates signals from a superconducting circuit such as a single-flux-quantum (SFQ) logic system onto a carrier wave light beam. The modulator is formed by depositing a magneto-optic material such as EuSe onto a superconducting ground plane such as that of the circuit. A microwave microstrip line is formed on the magneto-optic material and carries a signal from the circuit. The signal induces an H field in the magneto-optic material which causes the magneto-optic material to modulate the light.
Abstract:
An optical modulator (30) has a hot electrode (12) and a single ground plane electrode (64) which is close to the hot electrode on the upper surface (6). This form of travelling wave electrode (12, 64) confines the substrate modes to rectangular waveguide modes so providing a higher frequency response to the modulator (30) by moving the first substrate modes to a higher frequency.
Abstract:
Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including multiple electrodes configured to receive the electrical signal, where at least one characteristics of a segment of the traveling wave active optical element is changed based on the electrical signal received by a corresponding electrode of the multiple electrodes; a ground electrode; and multiple bond contacts; and an interposer bonded to at least a portion of the photonic integrated circuit chip, the interposer including a conductive trace formed on a surface of the interposer, the conductive trace electrically coupled to a source of the electrical signal; a ground trace; and multiple conductive vias electrically coupled to the conductive trace, where each conductive via of the multiple conductive vias is bonded with a respective bond contact of the multiple bond contacts of the photonic integrated circuit chip.
Abstract:
The invention relates to an electro-optical modulator, comprising at least one optical waveguide (112, 122); an electrode arrangement (1) for applying a voltage across the optical waveguide (112, 122), wherein the electrode arrangement (1) comprises a first and a second electrical line (11, 12) and at least two terminating resistors (21, 22) terminating the first and the second electrical line (11, 12); and wherein the electrode arrangement (1) comprises at least one capacitive structure (31) that galvanically separates the two terminating resistors (21, 22). According to the invention, the capacitive structure (31) comprises at least two electrically conductive layers (313, 314, 316) arranged between the first and the second electrical line (11, 12), wherein the at least two layers (313, 314, 316) are separated by at least one dielectric layer (315, 317).