中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

774 records (took 0.027 seconds)

    Electron emission device and electron emission display having the same
    122.
    发明公开
    Electron emission device and electron emission display having the same 有权
    Elektronenemissionsvorrichtung und Elektronenemissionsanzeigevorrichtung

    公开(公告)号：EP1780759A2

    公开(公告)日：2007-05-02

    申请号：EP06122892.0

    申请日：2006-10-25

    Applicant: Samsung SDI Co., Ltd.

    Inventor： Kim, Si-Myeong

    IPC: H01J31/12

    CPC classification number: H01J1/304 ,  H01J31/127 ,  H01J2201/319

    Abstract: An electron emission device and display including the same include a substrate; a cathode electrode including a first electrode portion formed on the substrate and having opening portions, and second electrode portions placed within respective ones of the opening portions such that the second electrodes are separated from the first electrode; a resistance layer electrically interconnecting the first electrode portion and the second electrode portions of the cathode electrode; and electron emission regions electrically connected to the second electrode portions. A width of the second electrode portions or of the resistance layer between the first and second electrode portions varies along a longitudinal direction of the cathode electrode.

    Abstract translation: 包括它的电子发射器件和显示器包括衬底; 阴极，其包括形成在所述基板上并具有开口部的第一电极部，以及设置在所述开口部的各个开口部内的第二电极部，使得所述第二电极与所述第一电极分离; 使第一电极部和阴极电极的第二电极部电连接的电阻层; 以及与第二电极部分电连接的电子发射区域。 第一电极部分或第二电极部分之间的电阻层的宽度沿阴极电极的长度方向变化。

    FIELD-EMISSION ELECTRON SOURCE
    123.
    发明公开
    FIELD-EMISSION ELECTRON SOURCE 审中-公开
    FELDEMISSIONSKATHODE

    公开(公告)号：EP1071109A4

    公开(公告)日：2003-07-09

    申请号：EP99909285

    申请日：1999-03-19

    Applicant: MATSUSHITA ELECTRIC IND CO LTD

    Inventor： KOGA KEISUKE

    IPC: H01J1/304 ,  H01L27/07 ,  H01J1/30 ,  H01L27/06

    CPC classification number: H01L27/0705 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A field-emission electron source which comprises a field-emission electron source part formed on a p-type silicon substrate (1) and an n-channel field-effect transistor part formed on the p-type silicon substrate (1) in a position corresponding to the field-emission electron source part and in which the field-emission electron source part is provided in the drain region of the field-effect transistor part, and the field-emission current from the field-emission source part is controlled by a control voltage applied to the gate electrode (8) of the field-effect transistor part, wherein the drain region includes at least two wells (3, 4) with different impurity concentrations, the well (4) having the lower impurity concentration is provided at an end part of the drain region provided in contact with the channel region of the field-effect transistor part.

    SHIELDED FIELD EMISSION DISPLAY
    124.
    发明授权
    SHIELDED FIELD EMISSION DISPLAY 失效
    SHIELDED场发射显示装置

    公开(公告)号：EP0896730B1

    公开(公告)日：2003-03-26

    申请号：EP97923607.2

    申请日：1997-05-05

    Applicant: Micron Technology, Inc.

    Inventor： XIA, Zhongyi ,  WESTPHAL, Michael, J. ,  LEE, John, K. ,  BROWNING, Jim, J.

    IPC: H01J1/30 ,  H01J29/96

    CPC classification number: H01J29/06 ,  H01J1/3042 ,  H01J29/96 ,  H01J2201/304 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A field emission display having emitters controlled by an integrated driving circuit. The field emission display includes a charge shield positioned above exposed areas of the substrate to protect driving circuitry integrated into the substrate. The charge shield is a conductive layer within an insulative layer covering the driving circuit. The charge shield is connected to ground or to a low reference potential to bleed away current within the insulative layer, thereby preventing drifting charges from affecting the electrical response of the integrated driving circuit. The charge shield also terminates electric fields within the insulative layer to reduce the effect on the integrated driving circuit of dynamic variations in surface charge. Electrical characteristics of the driving circuit thus remain constant, reducing variations in the current supplied to the emitters, thereby reducing variations in the intensity of light emitted by the display.

    MATRIX ADDRESSABLE DISPLAY WITH ELECTROSTATIC DISCHARGE PROTECTION
    126.
    发明授权
    MATRIX ADDRESSABLE DISPLAY WITH ELECTROSTATIC DISCHARGE PROTECTION 失效
    矩阵寻址的显示装置的保护，防止静电放电

    公开(公告)号：EP0923788B1

    公开(公告)日：2002-06-12

    申请号：EP97939819.5

    申请日：1997-09-04

    Applicant: Micron Technology, Inc.

    Inventor： CATHEY, David, A. ,  HUSH, Glen, E. ,  MA, Manny, K., F. ,  DUNHAM, Craig, M. ,  ZIMLICH, David, A.

    IPC: H01J3/02 ,  H01J31/12

    CPC classification number: H01J31/127 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/92

    Abstract: A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.

    FABRICATION OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY
    130.
    发明授权
    FABRICATION OF ELECTRON-EMITTING DEVICES HAVING HIGH EMITTER PACKING DENSITY 失效
    生产用高密度发射器封装电子发射装置

    公开(公告)号：EP0717877B1

    公开(公告)日：1999-11-17

    申请号：EP94927275.1

    申请日：1994-09-08

    Applicant: SILICON VIDEO CORPORATION

    Inventor： MACAULAY, John, M. ,  SPINDT, Christopher, J. ,  SEARSON, Peter, C. ,  DUBOC, Robert, M., Jr.

    IPC: H01J9/02 ,  H01J1/30

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: Electron-emissive elements in area electron emitters suitable for flat-panel displays are fabricated at high packing density. The electron-emissive elements have various shapes such as filaments (30A, 30B, or 30/88D1), cones (1181 or 142D), and cone-topped pedestals (92/1021). A typical emitter contains a substrate (20) that provides structural support. A patterned lower non-insulating region (22) formed with parallel lines is provided over insulating material of the substrate. Electron-emissive filaments (30A, 30B, or 30/88D1) are formed in pores (281) extending through an insulating layer (24) furnished over the lower non-insulating region. A patterned non-insulating gate layer (34B, 40B, or 46B) is typically provided over the insulating layer to form a gated device. Charged-particle tracks (261 or 50A1/50B1) are preferably employed to define locations for electron-emissive features. Usage of charged-particle tracks enables the electron-emissive features to be quite small and spaced closely together.

Patent Agency Ranking