公开(公告)号：EP1962062B1

公开(公告)日：2016-03-09

申请号：EP06834680.8

申请日：2006-12-14

Applicant: Asahi Kasei EMD Corporation

Inventor： NISHIDA, Sosuke ,  TAKATSUKA, Toshinori

IPC: G01D5/14

CPC classification number: G01D5/145

公开(公告)号：EP2960667A1

公开(公告)日：2015-12-30

申请号：EP15177698.6

申请日：2007-03-28

Applicant: Asahi Kasei EMD Corporation

Inventor： KATAOKA, Makoto ,  KAKUTA, Katsumi ,  YAMAGATA, Yo ,  KANAYAMA, Yuichi

IPC: G01R33/07 ,  H01L43/06

CPC classification number: G01R33/07 ,  G01R33/0011 ,  H01L27/22 ,  H01L43/06

Abstract: The present invention relates to a magnetic sensor with which magnetic characteristics are made extremely stable by consideration of an area of contact of a base layer of a magnetic substance and a semiconductor substrate. On a semiconductor substrate (111) a plurality of Hall elements (112a, 112b) are embedded so as to be coplanar to a top surface of the semiconductor substrate while being mutually spaced apart by a predetermined distance, and above the Hall elements and the semiconductor substrate, a base layer (114), having coefficient of thermal expansion differing from that of the Hall elements and partially covers a region of each Hall elements, is formed via a protective layer (113), and a magnetic flux concentrator (115), having an area larger than the base layer and with magnetic amplification, is formed on the base layer. An area of contact of the base layer of the magnetic substance and the semiconductor substrate is made small to lessen the generation of an offset voltage.

Abstract translation: 磁传感器技术领域本发明涉及考虑到磁性物质的基底层与半导体基板的接触面积而使磁特性非常稳定的磁传感器。 在半导体衬底（111）上嵌入多个霍尔元件（112a，112b），以便与半导体衬底的顶表面共面一个预定距离相互间隔开，并且在霍尔元件和半导体 通过保护层（113）和磁通集中器（115）形成具有与霍尔元件的热膨胀系数不同的部分的基底层（114），并部分地覆盖每个霍尔元件的区域， 在基底层上形成具有大于基底层并且具有磁放大的面积的区域。 使磁性物质的基底层与半导体基板的接触面积小，以减少偏移电压的产生。

公开(公告)号：EP2023398B9

公开(公告)日：2015-02-18

申请号：EP08019935.9

申请日：2004-09-09

Applicant: Asahi Kasei EMD Corporation

Inventor： Ueno, Koichiro ,  Kuze, Naohiro ,  Moriyasu, Yoshitaka ,  Nagase, Kazuhiro

IPC: H01L31/0304 ,  H01L31/0203 ,  H01L27/144

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J1/02 ,  G01J1/0204 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  G01J2001/0276 ,  H01L31/1035 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

公开(公告)号：EP2752501A1

公开(公告)日：2014-07-09

申请号：EP11871690.1

申请日：2011-08-30

Applicant: EMD Corporation

Inventor： SETSUHARA, Yuichi ,  EBE, Akinori

IPC: C23C14/34 ,  C23C14/35 ,  H05H1/46

CPC classification number: H01J37/3411 ,  C23C14/3471 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3408 ,  H01J37/3417

Abstract: A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device 10 includes a target holder 14 provided in a vacuum container 11, a substrate holder 15 facing the target holder 14, a means 19 for introducing a plasma generation gas into the vacuum container 11, a means 161 for generating an electric field for sputtering in a region including a surface of a target T, an antenna placement room 182 provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window 183, and a radio-frequency antenna 13, which is provided in the antenna placement room 182, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.

Abstract translation: 提供能够以高速率形成高质量薄膜的薄膜形成溅射装置。 溅射装置10包括设置在真空容器11中的靶保持器14，面向靶保持器14的基板保持件15，用于将等离子体产生气体引入真空容器11的装置19，用于产生电场的装置161 在包括目标T的表面的区域中的溅射，设置在真空容器的壁的内表面和外表面之间的天线放置室182，以及通过电介质窗183与真空容器的内部空间分离， 设置在天线放置室182中的射频天线13，用于在包括由目标保持器保持的目标的表面的区域中产生射频感应电场。

公开(公告)号：EP2557430B1

公开(公告)日：2014-05-14

申请号：EP12183468.3

申请日：2007-03-28

Applicant: Asahi Kasei EMD Corporation

Inventor： Kataoka, Makoto ,  Kakuta, Katsumi ,  Yamagata, Yo ,  Kanayama, Yuichi

IPC: G01R33/07 ,  H01L43/06 ,  G01R33/00

CPC classification number: G01R33/07 ,  G01R33/0011 ,  H01L27/22 ,  H01L43/06

公开(公告)号：EP2157405B1

公开(公告)日：2013-07-31

申请号：EP08764634.5

申请日：2008-05-23

Applicant: Asahi Kasei EMD Corporation

Inventor： YAMASHITA, Masaya ,  KITAMURA, Toru

IPC: G01C17/38 ,  G01P15/18 ,  G01P21/00 ,  G01C25/00

CPC classification number: G01C17/38 ,  G01C25/005 ,  G01P15/18 ,  G01P21/00

Abstract: Even if a measurement data group is not a measurement data group that is obtained in a space where the magnitude of a vector physical quantity to be measured is uniform, an offset with high reliability is estimated. The reliability of the estimated offset is further improved. A vector physical quantity comprised of a plurality of components is repeatedly detected and vector physical quantity data group is obtained, and a difference vector group is calculated from the obtained vector physical quantity data group. A reference point included in the vector physical quantity data group is estimated based on a predetermined evaluation formula using the calculated difference vector group. Whether the calculated difference vector group is suitable for the estimation of the reference point is determined. Only a predetermined difference vector group is output for the estimation of the reference point based on the determination result. Moreover, the degree of reliability of the estimated reference point contains the difference vector group, and only a predetermined reference point is output as an offset based on the determination result.

公开(公告)号：EP2058944B1

公开(公告)日：2012-06-27

申请号：EP07792993.3

申请日：2007-08-27

Applicant: Asahi Kasei EMD Corporation

Inventor： AIBA, Yusuke

IPC: H03G1/00 ,  H03G1/04 ,  H03F3/45 ,  H03F1/32

CPC classification number: H03G1/0029 ,  H03F1/3211 ,  H03F3/45179 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2203/45052 ,  H03F2203/45066 ,  H03F2203/45101 ,  H03F2203/45292 ,  H03F2203/45356 ,  H03F2203/45394 ,  H03F2203/45481 ,  H03F2203/45586 ,  H03G1/0023 ,  H03G1/04

Abstract: Provided is a transconductance amplifier capable of suppressing a change caused by a large tuning voltage Vctrl in a range where the relationship between an input voltage and an output current is linear and adjusting the transconductance in a wider operation input range. The transconductance amplifier includes a differential pair formed by MOS transistors (111, 112) having a source grounded; MOS transistors (113, 114); amplifiers (106, 107); a voltage generating circuit (100); and a differential pair input voltage generating circuit (120). By adjusting the input differential common voltage Vcm of a full differential signal inputted to the differential pair in accordance with the change of the tuning voltage Vctrl controlling the transconductance so that a difference between Vcm and Vctr is constant, it is possible to maintain a constant range where the transconductance amplifier can obtain preferable linearity.

Abstract translation: 提供一种跨导放大器，其能够在输入电压与输出电流之间的关系为线性的范围内抑制由大调谐电压Vctrl引起的变化，并且在较宽的操作输入范围内调节跨导。 跨导放大器包括由源极接地的MOS晶体管（111,112）形成的差分对; MOS晶体管（113,114）; 放大器（106,107）; 一个电压发生电路（100）; 和差分对输入电压生成电路（120）。 通过根据控制跨导的调谐电压Vctrl的变化来调整输入到差分对的全差分信号的输入差分公共电压Vcm，使得Vcm与Vctr之间的差值恒定，可以保持恒定的范围 其中跨导放大器可以获得优选的线性度。

公开(公告)号：EP2408276A1

公开(公告)日：2012-01-18

申请号：EP10750875.6

申请日：2010-03-10

Applicant: EMD Corporation

Inventor： SETSUHARA, Yuichi ,  EBE, Akinori

IPC: H05H1/46 ,  C23C16/505 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32477 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device 10 according to the present invention includes a vacuum containem11, a radio-frequency antenna 21 placed between an inner surface 111A and an outer surface 111B of a wall of the vacuum container 11, and a dielectric separating member 16 for separating the radio-frequency antenna 21 from an internal space of the vacuum container 11. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container 11. The separating member 16 has the effects of preventing the radio-frequency antenna 21 from undergoing sputtering by the plasma produced in the vacuum container 11, suppressing an increase in the temperature of the radio-frequency antenna 21, and preventing the formation of particles.

Abstract translation: 本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。 根据本发明的等离子体处理装置10包括真空容器11，放置在真空容器11的壁的内表面111A和外表面111B之间的射频天线21和用于将真空容器11分离的电介质分离构件16 射频天线21与真空容器11的内部空间相比。与使用外部天线的装置相比，本装置可以在真空容器11中产生更强的磁场。分离构件16具有防止 射频天线21通过在真空容器11中产生的等离子体进行溅射，抑制高频天线21的温度上升，防止颗粒的形成。

公开(公告)号：EP2020750A1

公开(公告)日：2009-02-04

申请号：EP07743375.3

申请日：2007-05-15

Applicant: Asahi Kasei EMD Corporation

Inventor： KAIHO, Toshio ,  MACHIDA, Junichi

IPC: H03K17/687

CPC classification number: H03K17/6872 ,  H03F3/2171 ,  H03F3/2173 ,  H03F3/45475 ,  H03F2200/129 ,  H03F2200/135 ,  H03F2200/264 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/351 ,  H03F2203/45136 ,  H03F2203/45526 ,  H03K7/08 ,  H03K2217/0036

Abstract: A waveform of the output signal having high reproducibility to an input signal is outputted from capacitive load. Even the driving device is configured as a switching amplifier and drives capacitive load. Reactive power can be reduced to perform low power consumption. Output signals V1a and V1b that an output signal Vcap1 across output terminals 50 and 51 of load C1 fed back to input terminals 9a and 9b are compared with an input signal Vin so that error between output signals V1a and V1b is detected. A first error suppression signal Vout1 is produced so as to suppress the detected error between signals. The proportion of a first duration T1 that electric power is supplied to the load C1 to a second duration T2 that no electric power is supplied and load C1 is floated is altered according to the first error suppression signal.

Abstract translation: 从电容性负载输出对输入信号具有高再现性的输出信号的波形。 即使驱动装置配置为开关放大器并驱动容性负载。 可以减少无功功率以实现低功耗。 输出信号V1a和V1b将反馈到输入端子9a和9b的负载C1的输出端子50和51上的输出信号Vcap1与输入信号Vin进行比较，从而检测输出信号V1a和V1b之间的误差。 产生第一误差抑制信号Vout1，以便抑制检测到的信号之间的误差。 根据第一误差抑制信号改变向负载C1提供电力的第一持续时间T1与不提供电力并且负载C1浮起的第二持续时间T2的比例。

公开(公告)号：EP0921529B1

公开(公告)日：2008-03-05

申请号：EP97926249.0

申请日：1997-06-13

Applicant: Asahi Kasei EMD Corporation

Inventor： HOSHI, Nobuto ,  KUROKI,Masakatsu, Asahi Kasei Fuji Dai 5 RyoNo.110 ,  MINAKATA, Takashi

IPC: H01B1/12 ,  H01M10/40 ,  H01M6/18

CPC classification number: H01M10/052 ,  H01M2/1673 ,  H01M10/05 ,  H01M10/0565 ,  H01M2300/0085 ,  Y10T29/49108 ,  Y10T29/49112 ,  Y10T29/49115

Abstract: A hybrid electrolyte which is prepared by impregnating a molded high polymer porous body composed of a high polymer base material containing a cross-linked high polymer segment and a plurality of bubbles dispersed in the base material with an electrolytic solution until the porous body swells, with the high polymer base material having 20-75 gel %, a method for manufacturing the electrolyte, and a method for manufacturing an electrochemical element using the electrolyte. The hybrid electrolyte has high ionic conductivity and excellent high-temperature stability and exhibits a high adhesive property when the electrolyte is stuck to an electrode. In addition, when the method for manufacturing hybrid electrolyte is used, the hybrid electrolyte having the above-mentioned excellent properties and an electrochemical element using the hybrid electrolyte can be manufactured surely and efficiently.