公开(公告)号：WO2011123433A2

公开(公告)日：2011-10-06

申请号：PCT/US2011/030299

申请日：2011-03-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CARCASI, Michael, A. ,  RATHSACK, Benjamin, M. ,  SOMERVELL, Mark, H.

Inventor： CARCASI, Michael, A. ,  RATHSACK, Benjamin, M. ,  SOMERVELL, Mark, H.

IPC: G03F7/20 ,  G03B27/58

CPC classification number: G03F7/26 ,  G03F7/2024 ,  G03F7/40 ,  H01L21/67207

Abstract: A method and system for patterning a substrate using a radiation-sensitive material is described. The method (500) and system include forming a layer of radiation-sensitive material on a substrate (510), exposing the layer of radiation- sensitive material to a pattern of radiation (520), and then performing a post-exposure bake following the exposing (530). The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines (540). An exposure gradient within the radiation-sensitive material lines is then removed (550), followed by slimming the radiation-sensitive material lines (560).

Abstract translation: 描述了使用辐射敏感材料构图衬底的方法和系统。 方法（500）和系统包括在衬底（510）上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案（520），然后进行曝光后烘烤 曝光（530）。 然后对成像的辐射敏感材料层进行正色调显影以去除具有高辐射照射的区域以形成辐射敏感材料线（540）。 然后去除辐射敏感材料线内的曝光梯度（550），随后使辐射敏感材料线（560）减薄。

公开(公告)号：WO2008118738A3

公开(公告)日：2008-12-31

申请号：PCT/US2008057627

申请日：2008-03-20

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  LANE SCOTT

Inventor： LANE SCOTT

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3053 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/0825

Abstract: Embodiments of a gas cluster ion beam apparatus (100) and methods for forming a gas cluster ion beam (128) using a low-pressure process source (535) are generally described herein. In one embodiment, the low-pressure process source (535) is mixed with a high-pressure diluent source (512) in a static pump (500) to form a mixed source, from which a gas cluster jet (118) is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed.

Abstract translation: 本发明一般地描述气体簇离子束装置（100）的实施方案和使用低压处理源（535）形成气体簇离子束（128）的方法。 在一个实施例中，将低压处理源（535）与静压泵（500）中的高压稀释源（512）混合以形成混合源，从其中产生气体簇射流（118），并且 离子化形成气体团簇离子束。 可以描述和要求保护其他实施例。

公开(公告)号：WO2008039593A1

公开(公告)日：2008-04-03

申请号：PCT/US2007/075154

申请日：2007-08-03

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: H01L21/768

CPC classification number: H01L21/76844 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089

Abstract: A method of copper metallization includes providing a patterned substrate (400, 600) containing a via (426, 626) and a trench (424, 624), and performing an integrated process on the patterned substrate (400, 600). The integrated process includes depositing a first metai-containing layer (428, 628) over the patterned substrate (400, 600), removing by sputter etching the first metal-containing layer (428, 628) from the bottom (426b, 626b) of the via (426, 626) and at least partially removing the first metal-containing layer (428, 628) from the bottom (424b, 624b) of the trench (424, 624), depositing a conformal Ru layer (432, 632) onto the sputter etched first metal- containing layer (428a, 628a), depositing a Cu alloying metal layer (434, 634) onto the conformal Ru layer (432, 632), and plating Cu over the patterned substrate (400, 600). According to one embodiment, the method can further include depositing a second metal-containing layer (430) onto the sputter etched first metal-containing layer (428a, 628a) prior to depositing the conformal Ru layer (432, 632). According to another embodiment, a Cu alloying metal may be deposited onto the plated Cu and the plated Cu annealed.

Abstract translation: 铜金属化方法包括提供包含通孔（426,626）和沟槽（424,624）的图案化衬底（400,600），并在图案化衬底（400,600）上执行集成工艺。 整合过程包括在图案化的衬底（400,600）上沉积第一含元素层（428,628），通过从底部（426b，626b）的底部（426b，626b）溅射蚀刻第一含金属层（428,628） 所述通孔（426,626）并且从所述沟槽（424,624）的底部（424b，624b）至少部分地去除所述第一含金属层（428,628），沉积共形Ru层（432,632） 在所述溅射蚀刻的第一含金属层（428a，628a）上沉积Cu合金化金属层（434,634）到所述共形Ru层（432,632）上，并在所述图案化衬底（400,600）上镀覆Cu。 根据一个实施例，该方法还可以包括在沉积保形Ru层（432,632）之前，将第二含金属层（430）沉积到溅射蚀刻的第一含金属层（428a，628a）上。 根据另一个实施方案，可以将Cu合金金属沉积到镀覆的Cu上并且经电镀的Cu退火。

公开(公告)号：WO2007134035A3

公开(公告)日：2008-02-21

申请号：PCT/US2007068447

申请日：2007-05-08

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  DIP ANTHONY ,  REID KIMBERLY G

Inventor： DIP ANTHONY ,  REID KIMBERLY G

IPC: C23C16/30 ,  C23C16/56

CPC classification number: C23C16/303 ,  C23C16/56

Abstract: A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber (10), depositing an AfN film on the substrate (40), and post-treating the AIN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AIN film with substantially no increase in the AIN film thickness. The method can also include pre-treating the substrate (40) prior to AIN deposition, post-anneaiing the AIN film before or after the post-treatment, or both.

Abstract translation: 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室（10）中提供衬底，在衬底（40）上沉积AfN膜，以及暴露于含氮和含氧气体对AlN膜进行后处理。 后处理增加了AIN膜的介电常数，而基本上没有增加AIN膜厚度。 该方法还可以包括在AIN沉积之前预处理衬底（40），在后处理之前或之后对AlN膜进行后处理，或两者。

公开(公告)号：WO2007118006A3

公开(公告)日：2008-02-07

申请号：PCT/US2007065331

申请日：2007-03-28

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  CLARK ROBERT D

Inventor： CLARK ROBERT D

IPC: H01L21/314 ,  C23C16/30 ,  C23C16/448 ,  C23C16/455 ,  C23C28/02

CPC classification number: C23C16/45525 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/3142 ,  H01L21/318

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供了一种用于沉积包含氮化物或氮化铝形式的至少两种稀土元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可以任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氮气体的气体脉冲。 在替代实施例中，第一和第二稀土前体可以被脉冲在一起，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氮化物或氮化铝层（96）。 在每个气体脉冲之后也可以进行吹扫或抽空步骤。

公开(公告)号：WO2007115029A3

公开(公告)日：2007-11-29

申请号：PCT/US2007065342

申请日：2007-03-28

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  CLARK ROBERT D

Inventor： CLARK ROBERT D

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/40 ,  C23C16/308 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/50

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxide or an aluminate. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of an oxygen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxide or aluminate layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供了一种用于沉积包含至少两种氧化物或铝酸盐形式的稀土金属元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可以任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氧气体的气体脉冲。 在替代实施例中，第一和第二稀土前体可以被脉冲在一起，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氧化物或铝酸盐层（96）。 在每个气体脉冲之后也可以进行吹扫或抽空步骤。

公开(公告)号：WO2007118004A1

公开(公告)日：2007-10-18

申请号：PCT/US2007/065323

申请日：2007-03-28

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert, D.

Inventor： CLARK, Robert, D.

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L29/92 ,  H01L29/94

CPC classification number: H01L21/02192 ,  C23C16/303 ,  C23C16/308 ,  C23C16/403 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78 ,  H01L29/94

Abstract: A semiconductor device (90, 91), such as a transistor or capacitor, is provided. The device (90, 91) includes a substrate (25, 92), a gate dielectric (96) over the substrate (25, 92), and a conductive gate electrode film. (98) over the gate dielectric (96). The gate dielectric (96) includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements.

Abstract translation: 提供了诸如晶体管或电容器的半导体器件（90,91）。 器件（90,91）包括衬底（25,92），衬底（25,92）上的栅极电介质（96）和导电栅电极膜。 （98）通过栅极电介质（96）。 栅极电介质（96）包括含有至少两种不同稀土金属元素的混合稀土氧化物，氮化物或氧氮化物膜。

公开(公告)号：WO2007117803A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/063574

申请日：2007-03-08

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GOMI, Atsushi

Inventor： SUZUKI, Kenji ,  GOMI, Atsushi

CPC classification number: C23C16/16 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576

Abstract: A method for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery method includes introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.

Abstract translation: 描述了将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的方法。 蒸气输送方法包括向前体蒸气引入稀释气体并调节稀释气体添加物的空间分布，以便影响沉积膜的性质的改善。

公开(公告)号：WO2007117802A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/063570

申请日：2007-03-08

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76873 ,  H01L2221/1089

Abstract: A method of integrated processing of a patterned substrate (400, 600) for copper metallization. The method includes providing the patterned substrate (400, 600) containing a via (426, 626) and a trench (424, 624) in a vacuum processing tool (300), and performing an integrated process on the patterned substrate (400, 600) in the vacuum processing tool (300) by depositing a first metal-containing layer (428, 628) over the patterned substrate (400, 600), removing by sputter etching the first metal-containing layer (428, 628) from the bottom (426b, 626b) of the via (426, 626) and at least partially removing the first metal-containing layer (428, 628) from the bottom (424b, 624b) of the trench (424,624), depositing a conformal Ru layer (432, 632) onto the sputter etched first metal-containing layer (428a, 628a), depositing a non-conformal Cu layer (434,634) on the conformal Ru layer (432), and plating Cu (436, 636) over the patterned substrate (400, 600). According to one embodiment of the invention, the method can further include depositing a second metal-containing layer (430) onto the sputter etched first metal-containing layer (428a) prior to depositing the conformal Ru layer (432).

Abstract translation: 一种用于铜金属化的图案化衬底（400,600）的集成处理方法。 该方法包括在真空处理工具（300）中提供包含通孔（426,626）和沟槽（424,624）的图案化衬底（400,600），并且在图案化衬底（400,600）上执行集成处理 ）通过在图案化的衬底（400,600）上沉积第一含金属层（428,628），通过从底部溅射蚀刻第一含金属层（428,628）而去除真空处理工具（300） （426,626）的至少一部分（426b，626b），并且从沟槽（424,624）的底部（424b，624b）至少部分去除第一含金属层（428,628），沉积共形Ru层（ 在所述溅射蚀刻的第一含金属层（428a，628a）上沉积在所述共形Ru层（432）上沉积非共形Cu层（434,634）并在所述图案化衬底上镀覆Cu（436,636） （400,600）。 根据本发明的一个实施例，所述方法还可以包括在沉积所述共形Ru层（432）之前，在溅射蚀刻的第一含金属层（428a）上沉积第二含金属层（430）。

公开(公告)号：WO2007115084A1

公开(公告)日：2007-10-11

申请号：PCT/US2007/065483

申请日：2007-03-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

IPC: G05B19/418 ,  G05B23/02

CPC classification number: G05B19/41875 ,  C23C16/52 ,  G05B23/0254 ,  G05B2219/37514 ,  G05B2219/37533 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/26

Abstract: A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.

Abstract translation: 一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。