公开(公告)号：JPH09107155A

公开(公告)日：1997-04-22

申请号：JP28928395

申请日：1995-10-11

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  TODA ATSUSHI ,  YANASHIMA KATSUNORI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that is comprised of II-VI group compound semiconductor that has low operating voltage, high reliability and a long life and that can be manufactured easily. SOLUTION: In a semiconductor light emitting element that is deposited on a semiconductor substrate, such as a GaAs substrate 1, with the II-VI group compound semiconductor layers 3 to 11 that include an n type clad layer, an active layer and a p type clad layer, the uppermost or the lowermost II-VI group compound semiconductor layer that is a terminal layer, such as a p type ZnSe contact layer 11, is grown by a organic metal chemical vapor growth method or an organic metal molecular beam epitaxy method. In another case, a terminal layer comprises a ZnCdSe layer or a ZnCdSeTe layer.