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    1.
    发明专利
    未知

    公开(公告)号：DE69711344D1

    公开(公告)日：2002-05-02

    申请号：DE69711344

    申请日：1997-12-05

    Applicant: SONY CORP

    Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

    IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B29/40

    Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.

    2.
    发明专利
    未知

    公开(公告)号：DE60013039T2

    公开(公告)日：2005-09-08

    申请号：DE60013039

    申请日：2000-06-05

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

    IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2

    6.
    发明专利
    未知

    公开(公告)号：DE60013039D1

    公开(公告)日：2004-09-23

    申请号：DE60013039

    申请日：2000-06-05

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

    IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2

    7.
    发明专利
    未知

    公开(公告)号：DE69711344T2

    公开(公告)日：2002-11-14

    申请号：DE69711344

    申请日：1997-12-05

    Applicant: SONY CORP

    Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

    IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B29/40

    Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.

    8.
    发明专利
    未知

    公开(公告)号：DE69803721T2

    公开(公告)日：2002-09-12

    申请号：DE69803721

    申请日：1998-05-22

    Applicant: SONY CORP

    Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

    Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

    9.
    发明专利
    未知

    公开(公告)号：DE69803721D1

    公开(公告)日：2002-03-21

    申请号：DE69803721

    申请日：1998-05-22

    Applicant: SONY CORP

    Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

    Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

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