公开(公告)号：WO2010136322A1

公开(公告)日：2010-12-02

申请号：PCT/EP2010/056278

申请日：2010-05-07

Applicant: THALES ,  ZIAEI, Afshin ,  LE BAILLIF, Matthieu

Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81C2203/0735 ,  H01H59/0009

Abstract: Le domaine général de l'invention est celui des procédés de réalisation des modules électroniques comprenant d'une part des composants électroniques de puissance (3) réalisés sur substrat (1) en nitrure de gallium (GaN) et d'autre part des micro-interrupteurs (10) à activation électrostatique de type MEMS (Micro Electro Mechanical System). Les composants électroniques et les micro-interrupteurs selon l'invention sont réalisés sur un seul substrat en nitrure de gallium et le procédé de réalisation comporte au moins les étapes suivantes :- Etape 1 : Réalisation des composants de puissance (3) sur le substrat en nitrure de gallium; - Etape 2 : Dépôt d'une première couche de passivation commune (4) sur lesdits composants et sur le substrat; - Etape 3 : Réalisation des micro-interrupteurs (10) sur ledit substrat.

Abstract translation: 本发明涉及用于制造电子模块的方法的一般领域，包括在氮化镓（GaN）衬底（1）上制造的电子功率部件（3）以及静电激活的MEMS（微机电系统）微型开关（10） 。 根据本发明的电子部件和微型开关在单个氮化镓衬底上制造，并且制造方法至少包括以下步骤：步骤1：在氮化镓衬底上制造功率部件（3） 步骤2：在所述组件和衬底上沉积第一公共钝化层（4）; 和步骤3：在所述衬底上制备微动开关（10）。

公开(公告)号：WO2009138906A3

公开(公告)日：2010-06-10

申请号：PCT/IB2009051859

申请日：2009-05-06

Applicant: NXP BV ,  VAN SCHAIJK ROBERTUS T F

Inventor： VAN SCHAIJK ROBERTUS T F

IPC: B81B3/00

CPC classification number: B81B3/0086 ,  B81B3/0078 ,  B81B2201/016 ,  B81B2203/0118

Abstract: A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1 % and 2% of silicon. The second beam layer provides desired mechanical and/ or optical properties whilst the first beam layer prevents spiking.

Abstract translation: 一种MEMS器件和方法，包括：衬底; 一束 和位于其间的腔体; 所述光束包括第一光束层和第二光束层，所述第一光束层直接邻近所述空腔，所述第二光束层直接邻近所述第一光束层; 所述第一束层包含含有硅的金属或金属合金; 并且第二束层包含基本上不含硅的金属或金属合金。 优选地，第二光束层比第一光束层厚。 至少五倍厚，第一束层包含含有1％至2％硅的金属或合金。 第二光束层提供期望的机械和/或光学特性，同时第一光束层防止尖峰。

公开(公告)号：WO2007131796A3

公开(公告)日：2008-02-14

申请号：PCT/EP2007004394

申请日：2007-05-16

Applicant: MICROGAN GMBH ,  KUNZE MIKE ,  DAUMILLER INGO

Inventor： KUNZE MIKE ,  DAUMILLER INGO

IPC: H01L41/09 ,  F03G7/06 ,  F04B43/04 ,  H01F21/04 ,  H01G5/16 ,  H01H57/00

CPC classification number: F04B43/046 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/032 ,  H01F21/04 ,  H01F2007/068 ,  H01G5/18 ,  H01L41/047 ,  H01L41/0933 ,  H01L41/094 ,  H01L41/0973

Abstract: The invention relates to a semiconductor actuator comprising a substrate base (1), a bending structure (2) which is connected to the substrate base and can be bent at least partially in relation to the substrate base and is provided with semiconductor compounds based on nitrides of main group III elements, and at least two electrical supply contacts (3a, 3b) for impressing an electrical current into the bending structure or for applying an electrical voltage to the bending structure. At least two of the supply contacts are interspaced respectively on the bending structure and/or integrated into the same.

Abstract translation: 本发明涉及一种具有衬底基座的半导体致动器（1），连接在一个与基片的基础上，至少部分地相对于所述基片基体弯曲结构（2），其具有基于主III族元素的氮化物半导体的化合物偏转，和至少 两个电引线接触（3A，3B），其设置用于施加电流到或将电压施加到所述弯曲结构，其中至少两个在每种情况下彼此间隔在弯曲结构和/或集成在其中的供电接触的。

公开(公告)号：WO2003054938A1

公开(公告)日：2003-07-03

申请号：PCT/US2002/036088

申请日：2002-11-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna, R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

IPC: H01L21/20

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) using a process starting with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric (150). All, or portions, of the interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, for example, Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam (160) and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the moveable beam (160) that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material.

Abstract translation: 一种使用由铜镶嵌互连层开始的工艺来制造微机电开关（MEMS）的方法，由介于电介质（150）中的金属导体制成。 当开关处于闭合状态时，互连件的全部或部分凹陷到足以提供电容气隙的程度，以及为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束（160）并且提供用于切换信号穿过的一个或多个路径。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是沉积到形成开关装置的可移动梁（160）之间形成的间隙的所需厚度的另一介电层。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。

公开(公告)号：WO2002096166A1

公开(公告)日：2002-11-28

申请号：PCT/US2002/015602

申请日：2002-05-20

Applicant: CORPORATION FOR NATIONAL RESEARCH INITIATIVES

Inventor： OZGUR, Mehmet ,  HUFF, Michael, A.

IPC: H05K1/16

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches ("MEMS") and low-temperature co-fired ceramic ("LTCC") technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules (212, 214) and a MEMS device (211) fabricated on one of the modules (212). Once fabrication of the MEMS device (211) is completed, the two ceramic modules (212, 214) are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module (212) has also cavities (241) at the backside for mounting integrated circuits (220). The internal layers (236) are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract translation: 使用微机电开关（“MEMS”）和低温共烧陶瓷（“LTCC”）技术的相控阵天线系统和其它类型的射频（RF）装置和系统以及制造这种相控阵天线的方法 系统和其他类型的射频（RF）设备。 每个天线或其他类型的装置包括至少两个多层陶瓷模块（212,214）和在其中一个模块（212）上制造的MEMS装置（211）。 一旦完成了MEMS器件（211）的制造，两个陶瓷模块（212,214）被结合在一起，气密地密封MEMS器件，以及允许所有器件层之间的电连接。 底部陶瓷模块（212）在背面还具有用于安装集成电路（220）的空腔（241）。 使用在标准LTCC制造和低损耗介电LTCC带材料中可获得的导电，电阻和高k电介质浆料形成内层（236）。

公开(公告)号：WO02058089A9

公开(公告)日：2002-11-21

申请号：PCT/US0201662

申请日：2002-01-18

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： QIU JIN ,  SLOCUM ALEXANDER H ,  LANG JEFFREY ,  STRUEMPLER RALF ,  BRENNER MICHAEL P ,  LI JIAN

IPC: B81B3/00 ,  H01H1/00 ,  H01H1/24 ,  H01H50/00 ,  H01H59/00 ,  H01H61/00

CPC classification number: B81B3/0051 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/016 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H1/0036 ,  H01H1/24 ,  H01H50/005 ,  H01H59/0009 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2061/006

Abstract: A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about 1/4 of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the stable positions.

Abstract translation: 由本发明提供的双稳态结构的特征在于包括一个偏转元件，该偏转元件具有机械约束的端点和端点之间的顺应跨度，当在沿跨度的点施加力时，基本上自由地在两个稳定位置之间偏转。 偏转元件跨度设置成沿着跨度的长度在两个稳定位置中的一个中以及在机械上不受应力的条件下被弯曲。 偏转元件跨度的制造曲线包括沿着跨度长度的点处的曲线最大值，该曲线最大值距离跨度的端点的跨度长度的至少约1/4。 偏转元件跨度被限制为基本上禁止当元件在稳定位置之间偏转时跨度的特征的第二弯曲模式的发展。

公开(公告)号：WO02058089A1

公开(公告)日：2002-07-25

申请号：PCT/US2002/001662

申请日：2002-01-18

IPC: B81B3/00 ,  H01H1/00 ,  H01H1/24 ,  H01H50/00 ,  H01H59/00 ,  H01H61/00

CPC classification number: B81B3/0051 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/016 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H1/0036 ,  H01H1/24 ,  H01H50/005 ,  H01H59/0009 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2061/006

Abstract: A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about 1/4 of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the stable positions.

Abstract translation: 一种双稳态结构，其特征在于：偏转构件具有受限制的端点和端点之间的适应性跨度，当力施加到点时，基本上自由地在两个稳定位置之间挠曲 沿着垃圾。 偏转构件的范围在两个稳定位置中的一个中弯曲，并且在跨度的长度上没有机械应力的条件下。 偏转元件的距离曲线在距跨度长度的点上具有最大曲线，该距离是距跨度端点的距离长度的至少<1> / 4。 当构件在稳定位置之间弯曲时，偏转构件的范围被约束以基本上防止跨度的第二弯曲模式特征的形成。

公开(公告)号：US09604839B2

公开(公告)日：2017-03-28

申请号：US14184969

申请日：2014-02-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H02N1/00 ,  B81B3/00 ,  B81B7/00 ,  G06F17/50 ,  B81C1/00 ,  H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B7/0006 ,  B81B2201/016 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00293 ,  B81C2203/0145 ,  G06F17/5045 ,  G06F17/5068 ,  H01H1/0036 ,  H01H2001/0057 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

公开(公告)号：US20160257555A1

公开(公告)日：2016-09-08

申请号：US15155409

申请日：2016-05-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  B81C1/00 ,  G06F17/50

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B7/0006 ,  B81B2201/016 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00293 ,  B81C2203/0145 ,  G06F17/5045 ,  G06F17/5068 ,  H01H1/0036 ,  H01H2001/0057 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 形成MEMS结构的方法包括在基板上形成固定的致动器电极和接触点。 该方法还包括在固定的致动器电极和接触点上形成MEMS光束。 该方法还包括形成与固定致动器电极的部分对准的致动器电极阵列，其尺寸和尺寸被设计成防止MEMS光束在重复循环之后塌陷在固定的致动器电极上。 致动器电极阵列形成为与MEMS光束的下侧和固定的致动器电极的表面中的至少一个直接接触。

公开(公告)号：US20160207761A1

公开(公告)日：2016-07-21

申请号：US14701502

申请日：2015-04-30

Applicant: Purdue Research Foundation

Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

IPC: B81B7/00 ,  H01L29/51 ,  H01L49/02 ,  H01L27/22 ,  H01L29/78 ,  H01L27/115

CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

Abstract translation: 包括串联连接的至少两个负电容绝缘体的电路，两个负电容绝缘体之一被偏置以产生负电容。 负电容绝缘体中的一个可以包括作为纳米电子技术系统（NEMS）器件的一部分的气隙，并且第二负电容绝缘体包括铁电材料。 负电容绝缘体都可以位于场效应晶体管的沟道和栅极之间。 NEMS装置可以包括可动电极，电介质和固定电极，并且布置成使得可动电极附接到至少两个点并且与电介质和固定电极间隔开，并且铁电电容器电连接到 电极。