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    MICROELECTROMECHANICAL STRUCTURE AND PROCESS OF MAKING SAME
    4.
    发明申请
    MICROELECTROMECHANICAL STRUCTURE AND PROCESS OF MAKING SAME 审中-公开
    微电子结构及其制备方法

    公开(公告)号：WO1997004451A1

    公开(公告)日：1997-02-06

    申请号：PCT/US1996012003

    申请日：1996-07-19

    Applicant: CARNEGIE MELLON UNIVERSITY

    Inventor： CARNEGIE MELLON UNIVERSITY ,  CARLEY, L., Richard ,  REED, Michael, L. ,  FEDDER, Gary, K. ,  SANTHANAM, Suresh

    IPC: G11B09/00

    CPC classification number: H02N1/006 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C1/0015 ,  B81C2201/0109 ,  B81C2201/0132 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1445 ,  G11B2005/0002 ,  Y10S977/861 ,  Y10S977/881 ,  Y10S977/888 ,  Y10S977/89

    Abstract: The device (10) is comprised of a cantilevered beam (22, 58) positioned above, and free to move relative to, a substrate (24). The beam (22) may carry a plurality of conductors (44, 50) which are insulated from one another. One or more tips (28) is positioned on the beam with each tip being in electrical contact with one of the conductors. A memory device may be constructed by providing an array of such cantilevered beams proximate to a layer of media (16). Devices for positioning the beam in x and y directions (30, 32, 34, 36) perpendicular to each other and parallel to the layer of media and in a z direction (26, 68, 70) perpendicular to the media are provided. A control circuit (14) generates control signals input to the positioning devices for positioning the tips according to x, y and z coordinates. A read/write circuit (14) which is in electrical communication with the conductors of the beam, provide signals to the tips to cause the tips to write those signals to the layer of media in a write mode and to read previously written signals sensed by the tips in a read mode. A fabrication method is also disclosed.

    Abstract translation: 装置（10）包括位于衬底（24）上方并自由移动的悬臂梁（22,58）。 梁（22）可以承载彼此绝缘的多个导体（44,45）。 一个或多个尖端（28）定位在梁上，每个尖端与一个导体电接触。 可以通过提供靠近介质层（16）的这种悬臂梁的阵列来构造存储器件。 提供了用于将光束在x和y方向（30,32,34,36）上垂直定位并平行于介质层并且垂直于介质的z方向（26,68,70）的装置。 控制电路（14）产生输入到定位装置的控制信号，用于根据x，y和z坐标定位尖端。 与光束的导体电连通的读/写电路（14）向尖端提供信号，以使尖端以写模式将这些信号写入介质层，并读取由 读取模式中的提示。 还公开了一种制造方法。

    3D NAND flash memory devices and related electronic systems
    7.
    发明授权
    3D NAND flash memory devices and related electronic systems 有权

    公开(公告)号：US11908512B2

    公开(公告)日：2024-02-20

    申请号：US18148684

    申请日：2022-12-30

    Applicant: Micron Technology, Inc.

    Inventor： Tomoharu Tanaka ,  Yoshiaki Fukuzumi

    IPC: G11C11/4097 ,  G11C11/4091 ,  B81B7/00 ,  H10B41/20 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40

    CPC classification number: G11C11/4097 ,  B81B7/008 ,  G11C11/4091 ,  H10B41/20 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  B81B2201/07

    Abstract: A microelectronic device comprises local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors. The local digit line structures are coupled to strings of memory cells. The global digit line structures overlie the local digit line structures. The source line structures are interposed between the local digit line structures and the global digit line structures. The sense transistors are interposed between the source line structures and the global digit line structures, and are coupled to the local digit line structures and the source line structures. The read transistors are interposed between and are coupled to the sense transistors and the global digit line structures. The write transistors are interposed between and are coupled to the global digit line structures and the local digit line structures. Additional microelectronic devices, memory devices, and electronic systems are also described.

    Forming a cantilever assembly for vertical and lateral movement
    9.
    发明授权
    Forming a cantilever assembly for vertical and lateral movement 有权
    形成垂直和横向运动的悬臂组件

    公开(公告)号：US07687297B2

    公开(公告)日：2010-03-30

    申请号：US11824465

    申请日：2007-06-29

    Applicant: John Heck ,  Tsung-Kuan Allen Chou

    Inventor： John Heck ,  Tsung-Kuan Allen Chou

    IPC: H01L21/00

    CPC classification number: B81C1/00246 ,  B81B2201/07 ,  B81B2201/11 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C2203/0735 ,  B82Y10/00 ,  G11B9/1436

    Abstract: In one embodiment, the present invention includes a method for forming a sacrificial oxide layer on a base layer of a microelectromechanical systems (MEMS) probe, patterning the sacrificial oxide layer to provide a first trench pattern having a substantially rectangular form and a second trench pattern having a substantially rectangular portion and a lateral portion extending from the substantially rectangular portion, and depositing a conductive layer on the patterned sacrificial oxide layer to fill the first and second trench patterns to form a support structure for the MEMS probe and a cantilever portion of the MEMS probe. Other embodiments are described and claimed.

    Abstract translation: 在一个实施例中，本发明包括在微机电系统（MEMS）探针的基底层上形成牺牲氧化物层的方法，图案化牺牲氧化物层以提供具有基本矩形形状的第一沟槽图案和第二沟槽图案 具有基本上矩形的部分和从所述大致矩形部分延伸的横向部分，以及在所述图案化的牺牲氧化物层上沉积导电层以填充所述第一和第二沟槽图案以形成用于所述MEMS探针的支撑结构， MEMS探针。 描述和要求保护其他实施例。

    Method for forming a cantilever and tip
    10.
    发明授权
    Method for forming a cantilever and tip 失效
    形成悬臂和尖端的方法

    公开(公告)号：US07494593B1

    公开(公告)日：2009-02-24

    申请号：US10879971

    申请日：2004-06-28

    Applicant: Chien-Hua Chen ,  John Chen ,  Sriram Ramamoorthi

    Inventor： Chien-Hua Chen ,  John Chen ,  Sriram Ramamoorthi

    IPC: C25F3/12

    CPC classification number: B81C1/0015 ,  B81B2201/07

    Abstract: A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.

    Abstract translation: 公开了一种用于在基板上形成单晶悬臂和尖端的方法。 该方法可以包括在衬底上用光致抗蚀剂层限定植入区域的操作。 进一步的操作可以是将植入区域中的氧注入到预定深度的衬底中以形成掩埋氧化物层。 掩埋氧化物层可以限定单晶悬臂和尖端的底部。 另外的操作可以包括从掩埋氧化物层上方的衬底上形成单晶悬臂和尖端。

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