公开(公告)号：WO2007112394A2

公开(公告)日：2007-10-04

申请号：PCT/US2007/065028

申请日：2007-03-27

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: C23C16/44

CPC classification number: C23C16/4402 ,  C23C16/16 ,  C23C16/4481

Abstract: A method and integrated system (100) are provided for purifying and delivering a metal carbonyl precursor (114) utilized to process a substrate. The method includes providing the metal carbonyl precursor (114) containing un-reacted metal carbonyl precursor and metal-containing impurities in a metal precursor vaporization chamber (110) containing a precursor collection plate (120, 130), evacuating the metal precursor vaporization chamber (110), pressurizing the metal precursor vaporization chamber (110) with a CO-containing gas, vaporizing the un-reacted metal carbonyl precursor, and condensing the vaporized un-reacted metal carbonyl precursor as a purified metal carbonyl precursor (120a, 130a) on the precursor collection plate (120, 130). The method may further include vaporizing the purified metal carbonyl precursor (120a, 130a), and delivering a process gas containing the vapor of the purified metal carbonyi precursor (120a, 130a) by flowing a gas containing CO through the metai precursor vaporization chamber (110) to a deposition system (150) configured to expose a substrate to the process gas.

Abstract translation: 提供了一种方法和集成系统（100），用于净化和递送用于处理基底的金属羰基前体（114）。 该方法包括在含有前体收集板（120,130）的金属前体蒸发室（110）中提供含有未反应的金属羰基前体和含金属杂质的金属羰基前体（114），将金属前体蒸发室 110），用含CO气体加压金属前体蒸发室（110），蒸发未反应的金属羰基前体，并将蒸发的未反应的金属羰基前体作为纯化的金属羰基前体（120a，130a）冷凝在 前体收集板（120,130）。 该方法可以进一步包括蒸发纯化的金属羰基前体（120a，130a），并且通过使包含CO的气体流过met前驱物蒸发室（110）而输送含有纯化的金属碳原子前体（120a，130a）的蒸气的工艺气体 ）到沉积系统（150），其被配置为将衬底暴露于工艺气体。

公开(公告)号：WO2007095487A1

公开(公告)日：2007-08-23

申请号：PCT/US2007/061971

申请日：2007-02-12

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  PETTIT, Jonathan ,  JOE, Raymond

Inventor： PETTIT, Jonathan ,  JOE, Raymond

IPC: H01L21/00

CPC classification number: H01L21/67288 ,  C23C16/4412 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/67253

Abstract: A system (40) is provided for determining when the buildup of deposits (30) in an exhaust line (20) of a semiconductor wafer processing machine (10) requires cleaning. Deposits in vacuum exhaust lines (20) build up to where they eventually fail structurally, releasing particles that can contaminate equipment and processes. The time at which cleaning is required is often unpredictable, while frequent or early cleaning to avoid waiting too long unnecessarily reduces productivity. The invention provides for the monitoring of thermal properties on the inside of an exhaust line wall. Deposits cause changes in the monitored thermal properties. A heater (42) and thermocouple (43) can be used, for example, and the temperature at the thermocouple that is due to heat flow from the heater is measured. Buildups (30) in the exhaust line affect heat flow to the sensor and are measurable as a decline in sensed temperature. Structural failure of the coating in the exhaust line leads to the eventual leveling off and fluctuation of the temperature measurement. Comparison or correlation of the sensed thermal property or a profile thereof with data stored under known exhaust line conditions is used to determine the condition of the exhaust line and signal when cleaning is most appropriate.

Abstract translation: 提供一种系统（40），用于确定半导体晶片加工机（10）的排气管（20）中沉积物（30）的积聚何时需要清洁。 真空排气管（20）中的沉积物积聚到结构最终失效的地方，释放可能污染设备和工艺的颗粒。 需要清洁的时间通常是不可预知的，而频繁或早期清洁以避免等待太长时间不必要地降低生产率。 本发明提供了对排气管壁内部的热性能的监测。 沉积物导致监测的热性能发生变化。 例如，可以使用加热器（42）和热电偶（43），并且测量由于来自加热器的热量流出的热电偶处的温度。 排气管道中的积聚（30）会影响到传感器的热流，并且可以作为感测温度的下降而被测量。 排气管中涂层的结构破坏导致最终的平整和温度测量的波动。 使用感测的热性质或其轮廓与在已知排气管线条件下存储的数据进行比较或相关性来确定排气管线的状况和清洁最合适时的信号。

公开(公告)号：WO2007044048A2

公开(公告)日：2007-04-19

申请号：PCT/US2005/047693

申请日：2005-12-30

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KEVWITCH, Robert

Inventor： KEVWITCH, Robert

CPC classification number: H01L21/02101 ,  G03F7/427 ,  H01L21/67028

Abstract: A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry containing a process peroxide is introduced to the high pressure fluid for treating the substrate surface. The peroxide-based chemistry is used in conjunction with an initiator, wherein the initiator facilitates the formation of a radical of the process peroxide.

Abstract translation: 描述了用高压流体（例如处于超临界状态的二氧化碳）处理基板（105,205）的方法和系统（100,200）。 将包含过氧化氢的工艺化学品引入高压流体以处理基材表面。 基于过氧化物的化学物质与引发剂一起使用，其中引发剂促进过程过氧化物的自由基的形成。

公开(公告)号：WO2007030194A1

公开(公告)日：2007-03-15

申请号：PCT/US2006/026220

申请日：2006-07-06

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji ,  DIP, Anthony ,  SMITH, David ,  JOE, Raymond ,  GANDHI, Sundar

Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji ,  DIP, Anthony ,  SMITH, David ,  JOE, Raymond ,  GANDHI, Sundar

CPC classification number: H01L22/10 ,  G05B23/0254 ,  H01L21/67248

Abstract: A method of monitoring a thermal processing system (100, 200) in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response for the processing chamber (202) during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BiST table.

Abstract translation: 一种使用内置自检（BIST）表实时监测热处理系统（100,200）的方法，其包括将多个晶片（W）定位在热处理系统中的处理室（202）中 （100,200）; 执行实时动态模型（330）以在处理时间期间生成用于处理室（202）的预测动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 并将动态估计误差与由BiST表中的一个或多个规则建立的操作阈值进行比较。

公开(公告)号：WO2006124321A3

公开(公告)日：2007-01-11

申请号：PCT/US2006017294

申请日：2006-05-02

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KEVWITCH ROBERT

Inventor： KEVWITCH ROBERT

IPC: G03F7/42 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC classification number: H01L21/0206 ,  G03F7/427 ,  H01L21/02071

Abstract: During the processing of substrates (105), the substrate surface may be subjected to a cleaning process using supercritical CO 2 . Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO 2 . For example, an oxidation cleaning process causes the substrate structure (105) to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO 2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate (105) with supercritical CO 2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO 2 and are more easily removed than their predecessors.

Abstract translation: 在处理基板（105）期间，可以使用超临界CO 2 2对基板表面进行清洁处理。 例如，表面物质可以保留，因为它仅在极限可溶于超临界CO 2 2中。 例如，氧化清洁过程使得底物结构（105）在几个点处裂开，留下较小的氧化残余物碎片。 由于由氧化产生的极性成分，该残余物在超临界CO 2 2中仅具有最小的溶解度。 因此，该方法还包括用超临界CO 2处理衬底（105）和可以与较小碎片和/或其它较不溶的组分反应的官能化剂。 这些官能化组分在超临界CO 2中更易溶解，并且比其前辈更容易除去。

公开(公告)号：WO2006107545A3

公开(公告)日：2006-12-07

申请号：PCT/US2006009219

申请日：2006-03-14

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

Inventor： SUZUKI KENJI

IPC: C23C16/16 ,  C23C16/06 ,  C23C16/18 ,  H01L21/288

CPC classification number: C23C16/52 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

Abstract: A method (400) for improving adhesion of Cu to a Ru layer (650a, 650b) in Cu metallization. The method (400) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1 , 100), depositing a Ru layer (650a, 650b) on the substrate (25, 125) in a chemical vapor deposition process, and forming a Cu seed layer (660a, 660b) on the Ru layer (650a, 650b) to prevent oxidation of the Ru layer (650a, 650b). The Cu seed layer (660a, 660b) is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate (25, 125). The oxidized portion (660a, 667) of the Cu seed layer (660a, 660b) is substantially dissolved and removed from the substrate (25, 125) during interaction with a Cu plating solution, thereby forming a bulk Cu layer (670a, 670b) with good adhesion to the underlying Ru layer (650a, 650b).

Abstract translation: 一种用于在Cu金属化中改善Cu与Ru层（650a，650b）的附着力的方法（400）。 方法（400）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），在衬底（25,125）上沉积Ru层（650a，650b） 在化学气相沉积工艺中，并且在Ru层（650a，650b）上形成Cu籽晶层（660a，660b）以防止Ru层（650a，650b）的氧化。 在对基板（25,125）进行Cu体积电镀处理之前，Cu籽晶层（660a，660b）被部分或完全氧化。 在与Cu电镀溶液相互作用的过程中，Cu籽层（660a，660b）的氧化部分（660a，660b）基本上溶解并从衬底（25,125）除去，从而形成本体Cu层（670a，670b） 与下面的Ru层（650a，650b）具有良好的粘合性。

公开(公告)号：WO2006057706A3

公开(公告)日：2006-11-09

申请号：PCT/US2005035429

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

Inventor： SUZUKI KENJI

IPC: C23C16/16 ,  H01L21/768

CPC classification number: H01L21/76846 ,  C23C16/16 ,  H01L21/28556

Abstract: A method (300) and a deposition system (1, 100) for increasing deposition rates of metal layers (440, 460) from metal-carbonyl precursors (52, 152) using CO gas and a dilution gas. The method (300) includes providing a substrate (25, 125, 400, 402) in a process chamber (10, 110) of a processing system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber (10, 110), and exposing the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process. The deposition system (1, 100) contains a substrate holder (20, 120) configured for supporting and heating a substrate (25, 125, 400, 402) in a process chamber (10, 110) having a vapor distribution system (30, 130), a precursor delivery system (105) configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system (30, 130), a dilution gas source (37, 137) configured for adding a dilution gas to the process gas in the process chamber (10, 110), and a controller (165) configured for controlling the deposition system (1, 100) during exposure of the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于使用CO气体和稀释气体从金属羰基前体（52,152）提高金属层（440,460）的沉积速率的方法（300）和沉积系统（1,100）。 方法（300）包括在处理系统（1,100）的处理室（10,110）中提供衬底（25,125,400,402），形成含有羰基金属前体蒸气和 CO气体，稀释处理室（10,110）中的工艺气体，以及将衬底（25,125,400,402）暴露于稀释工艺气体，以将金属层（440,460）沉积在衬底（25）上 ，125,400,402）通过热化学气相沉积工艺。 沉积系统（1,100）包括衬底保持器（20,120），衬底保持器（20,120）被配置为支撑和加热处理室（10,110）中的衬底（25,125,400,402），所述处理室具有蒸气分配系统 130），前体输送系统（105），其被配置用于形成含有羰基金属前体蒸气和CO气体的工艺气体，并用于将所述工艺气体引入所述蒸气分配系统（30,130）;稀释气体源 ，137），被配置为将稀释气体添加到所述处理室（10,110）中的处理气体;以及控制器（165），被配置为在所述基板（25,125）暴露期间控制所述沉积系统（100） 400,402）与稀释的工艺气体通过热化学气相沉积工艺将金属层（440,460）沉积在衬底（25,125,400,402）上。

公开(公告)号：WO2006107545A2

公开(公告)日：2006-10-12

申请号：PCT/US2006/009219

申请日：2006-03-14

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: C23C16/16 ,  C23C16/18 ,  C23C16/06 ,  H01L21/288

CPC classification number: C23C16/52 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

Abstract: A method (400) for improving adhesion of Cu to a Ru layer (650a, 650b) in Cu metallization. The method (400) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1 , 100), depositing a Ru layer (650a, 650b) on the substrate (25, 125) in a chemical vapor deposition process, and forming a Cu seed layer (660a, 660b) on the Ru layer (650a, 650b) to prevent oxidation of the Ru layer (650a, 650b). The Cu seed layer (660a, 660b) is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate (25, 125). The oxidized portion (660a, 667) of the Cu seed layer (660a, 660b) is substantially dissolved and removed from the substrate (25, 125) during interaction with a Cu plating solution, thereby forming a bulk Cu layer (670a, 670b) with good adhesion to the underlying Ru layer (650a, 650b).

Abstract translation: （400），用于改善Cu在Cu金属化层中与Ru层（650a，650b）的粘附性的方法（400）。 该方法（400）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），在衬底（25,125）上沉积Ru层（650a，650b） 在化学气相沉积工艺中，以及在Ru层（650a，650b）上形成Cu晶种层（660a，660b）以防止Ru层（650a，650b）的氧化。 在对衬底（25,125）执行Cu大块电镀工艺之前，Cu籽晶层（660a，660b）被部分或完全氧化。 在与Cu电镀溶液相互作用期间，Cu籽晶层（660a，660b）的氧化部分（660a，667）基本上被溶解并从衬底（25,125）去除，从而形成块Cu层（670a，670b） 对下面的Ru层（650a，650b）具有良好的粘附性。

公开(公告)号：WO2006104741A1

公开(公告)日：2006-10-05

申请号：PCT/US2006/009984

申请日：2006-03-20

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  ISHIZAKA, Tadahiro

Inventor： ISHIZAKA, Tadahiro

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  H01L21/00

CPC classification number: C23C16/45542 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/4583 ,  H01L21/67155 ,  H01L21/67751

Abstract: A plasma enhanced atomic layer deposition (PEALD) system (101 ) is described, wherein the system comprises a processing space (212) and a high vacuum, ultra-clean transfer space (216). During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate (125) is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber (110) and the pressures and gas flows within, to and from, and between the process chamber (110) and the high vacuum transfer space (216) are controlled to keep the transfer space ultra-clean.

Abstract translation: 描述了等离子体增强原子层沉积（PEALD）系统（101），其中该系统包括处理空间（212）和高真空超洁净传送空间（216）。 在加工过程中，形成薄保形膜的基板暴露于处理空间。 在衬底转移期间，衬底（125）暴露于高真空空间。 处理气体被顺序地和交替地引入处理室（110），并且压力和气体在处理室（110）和高真空传送空间（216）之内，之中和之间以及之间流动被控制以保持传送空间 超洁净。

公开(公告)号：WO2006104626A1

公开(公告)日：2006-10-05

申请号：PCT/US2006/007147

申请日：2006-03-01

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  LEUSINK, Gerrit, J.

Inventor： LEUSINK, Gerrit, J.

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4481 ,  C23C16/4405

Abstract: A method (300) and system (1 , 2) for depositing a layer from a vaporized solid precursor. The method includes providing a substrate (25) in a process chamber (10, 11) of a deposition system (1 , 2), forming a precursor vapor by light- induced vaporization of a solid precursor (52), and exposing the substrate (25) to a process gas containing the precursor vapor to deposit a layer including at least one element from the precursor vapor on the substrate (25).

Abstract translation: 一种用于从蒸发的固体前体沉积层的方法（300）和系统（1,2）。 该方法包括在沉积系统（1,2）的处理室（10,11）中提供衬底（25），通过固体前体（52）的光诱导蒸发形成前体蒸汽，并将衬底（ 25）包含含有前体蒸气的工艺气体，以在衬底（25）上沉积包含来自前体蒸气的至少一种元素的层。